Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Diego Calvo Ruiz"'
Autor:
Daxin Han, Giorgio Bonomo, Diego Calvo Ruiz, Akshay Mahadev Arabhavi, Olivier J. S. Ostinelli, Colombo R. Bolognesi
Publikováno v:
IEEE Transactions on Electron Devices, 69 (7)
Digital electronics power consumption evolved into a major concern: at the current pace, general-purpose computing energy consumption will exceed global energy production before 2045. The principal approach to curbing energy consumption in digital ap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eada1e5bd8e2fecaa412bc2b56b0332a
https://doi.org/10.1109/ted.2022.3171739
https://doi.org/10.1109/ted.2022.3171739
Autor:
Diego Calvo Ruiz, Carmine Sileno
Publikováno v:
Materials Science Forum. 1062:155-159
The present paper shows a new fixed abrasive bond-grit formulation aimed for best-in-class, low-cost and high-quality finished SiC wafer surfaces. Grinding wheels manufactured with this technology can accomplish ultra-smooth SiC (Ra = 0.55 nm and TTV
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0eccb6b086cc98c3c15c505821157cdd
https://doi.org/10.4028/p-4cttw9
https://doi.org/10.4028/p-4cttw9
Autor:
Giorgio Bonomo, Daxin Han, Olivier Ostinelli, Diego Calvo Ruiz, Tamara Saranovac, Colombo R. Bolognesi
Publikováno v:
IEEE Electron Device Letters. 41:1320-1323
GaInAs-based Metal Oxide Semiconductor High Electron Mobility Transistors (MOS-HEMTs) can in principle combine the wide bandwidth of HEMTs to the low gate leakage current of MOSFETs in a single deeply-scaled ultrahigh speed low-noise technology. Desp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e09623a0b315d6bcbde7952638b976c
https://doi.org/10.1109/led.2020.3012017
https://doi.org/10.1109/led.2020.3012017
Autor:
Daxin Han, Giorgio Bonomo, Diego Calvo Ruiz, Akshay Mahadev Arabhavi, Olivier J. S. Ostinelli, Colombo R. Bolognesi
Publikováno v:
IEEE Transactions on Electron Devices, 69 (7)
Part I of this work described narrow bandgap GaInAs-based I-MOS devices with a minimum steep slope SSmin = 1.25 mV/dec maintained over 4 orders of magnitude in drain current, ION/IOFF ratios >106 at 300 K (>109 at 15 K), and low operating voltages fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d9aee6e7023f575a4fa1b9dca1d00694
Autor:
Olivier Ostinelli, Daxin Han, Akshay M. Arabhavi, Colombo R. Bolognesi, Anna Hambitzer, Tamara Saranovac, Diego Calvo Ruiz
Publikováno v:
IEEE Transactions on Electron Devices, 66 (11)
GaInAs/InAs composite channels in InP-based pHEMTs enable wideband and/or low-noise performances because of their superior carrier transport properties. To date, the influence of the InAs inset design details on transistor performance has not been pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fbfea8db7fd4b0c3f34650c851ca83e3
https://doi.org/10.1109/ted.2019.2940638
https://doi.org/10.1109/ted.2019.2940638
Autor:
Olivier Ostinelli, Tamara Saranovac, Daxin Han, Diego Calvo Ruiz, Colombo R. Bolognesi, Akshay M. Arabhavi
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 32:496-501
Optimum device performance in terms of noise and gain of AlInAs/GaInAs/InP High Electron Mobility Transistors (HEMTs) requires minimizing the contact resistance ${R} _{C}$ . In several HEMT fabrication steps in device manufacturing it is common to ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15e8847c86ad991ac43fe0c8896eb11a
https://doi.org/10.1109/tsm.2019.2940320
https://doi.org/10.1109/tsm.2019.2940320
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 30:462-467
A Pt/Ti/Pt/Au gate electrode stack is commonly used in AlInAs/GaInAs/InP high electron mobility transistors due to the high Schottky barrier height of Pt on AlInAs and the fact that Pt can be controllably diffused through semiconductor layers thereby
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d704c1bac18d2571492fca9a1b46df2b
https://doi.org/10.1109/tsm.2017.2749479
https://doi.org/10.1109/tsm.2017.2749479
Publikováno v:
BCICTS
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)
InP-based HEMTs with composite GaInAs/InAs channels are recognized for their high frequency performance thanks to their superior carrier transport properties. On the other hand, the addition of an InP subchannel to a GaInAs channel can effectively su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4fa2fcf2a913946076908e94e59e0df7
https://doi.org/10.1109/bcicts45179.2019.8972710
https://doi.org/10.1109/bcicts45179.2019.8972710
Autor:
Giorgio Bonomo, Colombo R. Bolognesi, Daxin Han, Tamara Saranovac, Olivier Ostinelli, Diego Calvo Ruiz
Publikováno v:
physica status solidi (a). 218:2000191
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::febd22741561b4185ed0b6d24381a38b
https://doi.org/10.1002/pssa.202000191
https://doi.org/10.1002/pssa.202000191
Autor:
Luis A. Marqués, Normand Mousseau, María Aboy, Diego Calvo Ruiz, Iván Santos, Lourdes Pelaz, Mickaël Trochet, Pedro López
Producción Científica
The modeling of self-interstitial defects evolution is key for process and device optimization. For a self-interstitial cluster of a given size, several configurations or topologies exist, but conventional models assume t
The modeling of self-interstitial defects evolution is key for process and device optimization. For a self-interstitial cluster of a given size, several configurations or topologies exist, but conventional models assume t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bece52f77a4973f28889d90e292b2a03
https://doi.org/10.1109/cde.2017.7905224
https://doi.org/10.1109/cde.2017.7905224