Zobrazeno 1 - 10
of 98
pro vyhledávání: '"Diefeng Gu"'
Publikováno v:
Surface and Coatings Technology. 265:185-190
The nanomechanical properties of Pt thin films grown on Si (100) using atomic layer deposition (ALD) were investigated using nanoindentation. Recently, atomic layer deposition (ALD) has successfully demonstrated the capability to deposit ultra-thin f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd1e35b307c68dfb76617868f8a4d010
https://doi.org/10.1016/j.surfcoat.2015.01.037
https://doi.org/10.1016/j.surfcoat.2015.01.037
Publikováno v:
Journal of Applied Physics; 6/15/2005, Vol. 97 Issue 12, p123710, 5p, 2 Diagrams, 4 Graphs
Publikováno v:
ECS Solid State Letters. 2:P31-P34
Tetrakis(dimethylamido) hafnium(IV) (TDMAHf) precursor and water vapor as an oxidant were employed to synthesize hafnia (HfO2). Atomic layer deposition (ALD) was used to fabricate highly ordered hafnia nanotubes within the tubular channels of macro-p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbad45214100da9fffb168c883d1ec25
https://doi.org/10.1149/2.001303ssl
https://doi.org/10.1149/2.001303ssl
Autor:
Abdelmageed Elmustafa, M. A. Mamun, Ashraf Hassan Farha, Ali Oguz Er, Yüksel Ufuktepe, Diefeng Gu, Hani E. Elsayed-Ali
Publikováno v:
Applied Surface Science. 258:4308-4313
Structural and mechanical properties of niobium nitride thin films deposited by pulsed laser deposition were investigated using X-ray diffraction, atomic force microscopy, and nanoindentation. Niobium nitride was deposited on Si(1 0 0) by pulsed lase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::edfbf55ba91cd4152b995b32dda3f07a
https://doi.org/10.1016/j.apsusc.2011.12.089
https://doi.org/10.1016/j.apsusc.2011.12.089
Publikováno v:
ECS Transactions. 41:255-261
Atomic Layer Deposition (ALD) growth of antimony telluride (Sb2Te3) thin films has been investigated. We fabricated antimony telluride layers as a function of ALD deposition temperature in order to establish the ALD process window using (Me3Si)2Te wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::105f772cda23947e1d494b9aef4ad696
https://doi.org/10.1149/1.3633675
https://doi.org/10.1149/1.3633675
Publikováno v:
ECS Transactions. 41:139-144
Highly ordered hafnia (HfO2) nanotubes were fabricated by atomic layer deposition (ALD) within the channels of macroporous Si templates. The nanotubes were released from the template by wet chemical dissolution of the Si template. We synthesized 35 n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a150612e92d759f6f14211c698700d3
https://doi.org/10.1149/1.3633662
https://doi.org/10.1149/1.3633662
Autor:
Patrick Boland, Kurniawan Foe, Diefeng Gu, Mun Jeong, Helmut Baumgart, Tarek M. Abdel-Fattah, Gon Namkoong
Publikováno v:
ECS Transactions. 33:51-55
A novel, versatile, and template-free method has been developed to synthesize solid crystalline zinc oxide (ZnO) spheres via hydrothermal process at a temperature of 100oC within 2h. Using an aqueous solution of zinc acetate dihydrate, ammonium hydro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::da704db1be3f55db9bd64271613b4a0f
https://doi.org/10.1149/1.3557571
https://doi.org/10.1149/1.3557571
Publikováno v:
ECS Transactions. 33:199-205
Research and development of organic photovoltaics continues to progress as efforts to harness limitless and pollution-free solar energy remains an intense focus of scientific interest. Organic solar cells that are inexpensive, easy to fabricate, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::38c870934241e6b4becfd198f5c41ccb
https://doi.org/10.1149/1.3553362
https://doi.org/10.1149/1.3553362
Publikováno v:
ECS Transactions. 33:203-209
NbN thin films for superconducting radiofrequency (SRF) applications have been deposited by atomic layer deposition (ALD) from NbCl5 and NH3 as chemical precursors. Transmission electron microscopy reveals that the crystallization of the resulting Nb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2010ef0a8b024a592a6142901c8cb0fb
https://doi.org/10.1149/1.3485257
https://doi.org/10.1149/1.3485257
Publikováno v:
ECS Transactions. 33:355-363
From diethyl Zinc, Zinc oxide thin films deposited by atomic layer deposition (ALD) were characterized using X-ray diffraction, atomic force microscope, energy dispersive spectroscopy and Rutherford backscattering. The as-deposited ALD ZnO films show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5e05e4e1e20aae49a784c70865a8e83
https://doi.org/10.1149/1.3485271
https://doi.org/10.1149/1.3485271