Zobrazeno 1 - 10
of 47
pro vyhledávání: '"Diederik Maas"'
Autor:
Maarten van Es, Selman Tamer, Elin Bloem, Laurent Fillinger, Elfi van Zeijl, Klára Maturová, Jacques van der Donck, Rob Willekers, Adam Chuang, Diederik Maas
Publikováno v:
Micro and Nano Engineering, Vol 19, Iss , Pp 100181- (2023)
Patterning photoresist with extreme control over dose and placement is the first crucial step in semiconductor manufacturing. However, how can the activation of modern complex resist components be accurately measured at sufficient spatial resolution?
Externí odkaz:
https://doaj.org/article/0653850e95f944f287663f12ba7a92af
Autor:
Maarten van Es, Mehmet Tamer, Robbert Bloem, Laurent Fillinger, Elfi van Zeijl, Klára Maturová, Jacques van der Donck, Rob Willekers, Diederik Maas
Patterning photoresist with extreme control over dose and placement is the first crucial step in semiconductor manufacturing. However, how can the activation of modern complex resist components be accurately measured at sufficient spatial resolution?
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3a700cab3f497d3ad392c57bf97ae51
https://doi.org/10.21203/rs.3.rs-1238936/v2
https://doi.org/10.21203/rs.3.rs-1238936/v2
Autor:
Diederik Maas, TU Delft
Publikováno v:
Proceedings of the European Microscopy Congress 2020.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9a59c51c4b16b5cc6c8b294f23d32e5
https://doi.org/10.22443/rms.emc2020.384
https://doi.org/10.22443/rms.emc2020.384
Publikováno v:
Journal of applied physics, 234904, 127, 234904-1-234904-11
Journal of Applied Physics, 127(23)
Journal of Applied Physics, 127(23)
We designed and built a compact bi-axial electron beam separator. This separator is an indispensable electron optical element in the development of MEMS-mirror-based miniaturized concepts for quantum electron microscopy (QEM) and aberration-corrected
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c88571290fbaeb683bd7675a0ebbc46b
http://resolver.tudelft.nl/uuid:2088eb24-2478-4dbb-9f30-544667476ffd
http://resolver.tudelft.nl/uuid:2088eb24-2478-4dbb-9f30-544667476ffd
Publikováno v:
Optics Express, 5, 25, 4621-4631
Due to the rather broad band emission spectrum of the extremely hot plasma in its extreme ultra-violet (EUV) source, an EUV lithography scanner also projects out-of-band vacuum- and deep-UV (OoB V/DUV) light on the photoresist on a wafer. As this typ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::703bf324ac8ed918c2e2ce19597f19b5
https://pubmed.ncbi.nlm.nih.gov/28380733
https://pubmed.ncbi.nlm.nih.gov/28380733
Publikováno v:
MRS Bulletin. 39:336-341
Over the last few years, significant improvements in sources, columns, detectors, control software, and accessories have enabled a wealth of new focused ion beam applications. In addition, modeling has provided many insights into ion-sample interacti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::502b260dee9b5cec9fd2603b8ef03103
https://doi.org/10.1557/mrs.2014.56
https://doi.org/10.1557/mrs.2014.56
Publikováno v:
Microelectronic Engineering, 153
Microelectronic Engineering
Microelectronic Engineering
To qualify tools of semiconductor manufacturing, particles unintentionally deposited in these tools are characterized using blank wafers. With fast optical inspection tools one can quickly localize these particle defects. An example is TNO's Rapid Na
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7655c390085b8a0fdbce6515fb0216a6
http://resolver.tudelft.nl/uuid:2da20d68-0f58-4443-a0f7-9dfbb3941785
http://resolver.tudelft.nl/uuid:2da20d68-0f58-4443-a0f7-9dfbb3941785
Publikováno v:
Panning, E.M., Extreme Ultraviolet (EUV) Lithography VII, Proceedings of SPIE 2015, 22-25 February 2015
A reproducible measurement of in-band EUV power over time is essential in EUV lithography, e.g. for dose control, for monitoring the transmission of (parts of) the optical path and for detecting changes in EUV source performance. However, all current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dfb57b207766a995e7eb0de14308fbd2
http://resolver.tudelft.nl/uuid:e91df2b1-9f09-4003-98b8-a73c63136ba5
http://resolver.tudelft.nl/uuid:e91df2b1-9f09-4003-98b8-a73c63136ba5
Publikováno v:
Scanning. 34:90-100
Although helium ion microscopy (HIM) was introduced only a few years ago, many new application fields are emerging. The connecting factor between these novel applications is the unique interaction of the primary helium ion beam with the sample materi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16614890c931d5509ec6b982559af9d5
https://doi.org/10.1002/sca.21009
https://doi.org/10.1002/sca.21009
Publikováno v:
Microscopy Today, 3, 19, 22-26
Charged particle microscopes have been used extensively for the creation of nanostructures. As a subset of the techniques for this, the process of beam-induced chemistry offers almost endless flexibility for both additive (by beam-driven precursor de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::09d5c60f6ad16d92d8c59476efc5c427
https://doi.org/10.1017/s1551929511000307
https://doi.org/10.1017/s1551929511000307