Zobrazeno 1 - 10
of 53
pro vyhledávání: '"Didier Goguenheim"'
Publikováno v:
Journal of Nanoscience and Nanotechnology. 11:9310-9315
Formation of self-assembled monolayers (SAM) of 3-aminopropyltrimethoxysilane (APTMS), chemically bonded to silicon dioxide surface, using a new solvent free process, has been studied by contact angle measurements, ellipsometry, ATR-FTIR spectroscopy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9484a7d3fac70cb2c88644ab13b2f62
https://doi.org/10.1166/jnn.2011.4289
https://doi.org/10.1166/jnn.2011.4289
Publikováno v:
Microelectronics Reliability. 49:1008-1012
In this paper, we analyze the impact of various process steps on the reliability of PMOSFET’s submitted to Negative Bias Temperature Instabilities stress conditions. We give some evidence of the complete thermal anneal of interface states induced b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1bbc4aece44bd1f52e1452a1f62bd2a
https://doi.org/10.1016/j.microrel.2009.06.022
https://doi.org/10.1016/j.microrel.2009.06.022
Publikováno v:
Microelectronics Reliability. 48:1318-1321
The aim of this study is to propose a dynamic stress method allowing to correctly evaluate NVM oxide robustness at high temperature for automotive applications. Using a single cell model and electrical measurements for calibration, we emulate an AC s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::005c4ad84648692ad1d75171ffc00791
https://doi.org/10.1016/j.microrel.2008.07.050
https://doi.org/10.1016/j.microrel.2008.07.050
Publikováno v:
Microelectronics Reliability. 48:335-341
The temperature and voltage acceleration for a large database of time dependent dielectric breakdown in 2.3 and 3.2 nm SiO 2 oxides is investigated. All results deal with the time to hard breakdown which is defined when a typical high current limit (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ecc34a474c7724d90532dcd09da2e92
https://doi.org/10.1016/j.microrel.2007.08.006
https://doi.org/10.1016/j.microrel.2007.08.006
Publikováno v:
Microelectronics Reliability. 47:1322-1329
This tutorial is devoted to oxide reliability below 3 nm in advanced CMOS devices. Indeed, with device dimension downscaling, the oxide thickness reduction below 6 nm has led to important changes in degradation mechanisms and failure modes and this t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a9877670293be8c42f4f1313a7c788e
https://doi.org/10.1016/j.microrel.2007.07.048
https://doi.org/10.1016/j.microrel.2007.07.048
Publikováno v:
Microelectronics Reliability. 47:1373-1377
The aim of this study is to obtain from experimental data a reliable approach for predicting the impact of temperature on data retention in EEPROM memories. Using a floating gate dedicated structure, we present stress induced leakage current results
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19f090016cce44396857664d0edebbd0
https://doi.org/10.1016/j.microrel.2007.07.040
https://doi.org/10.1016/j.microrel.2007.07.040
Autor:
Emmanuel Vincent, F. Perrier, M. Denais, Nathalie Revil, Chittoor Parthasarathy, Vincent Huard, Alain Bravaix, Didier Goguenheim
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, 2005, 45 (9-11), pp.1370-1375. ⟨10.1016/j.microrel.2005.07.023⟩
Microelectronics Reliability, 2005, 45 (9-11), pp.1370-1375. ⟨10.1016/j.microrel.2005.07.023⟩
International audience; Permanent damage induced by Channel Hot-Carrier (CHC) injections have been distinguished from the charge-discharge of near-interface traps in ultra-thin gate-oxide (1.6nm) MOSFETs. It is shown that usual DC accelerating techni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::52733b0a57e8603e5f11ab18c4392378
https://doi.org/10.1016/j.microrel.2005.07.023
https://doi.org/10.1016/j.microrel.2005.07.023
Publikováno v:
Journal of Non-Crystalline Solids. 351:1860-1865
An experimental investigation on ultra-thin oxides under combined substrate hot-electron injection (SHEI) and tunnelling electrical stress (CVS) is reported. We study the electrical properties of 2.5–1.5 nm-thick SiO2 oxides in N-channel metal–ox
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8637604f37ed06c4abc240dc265b5d2e
https://doi.org/10.1016/j.jnoncrysol.2005.04.028
https://doi.org/10.1016/j.jnoncrysol.2005.04.028
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, 2005, Microelectronics Reliability, 45 (5-6), pp.883-886. ⟨10.1016/j.microrel.2004.10.025⟩
Microelectronics Reliability, 2005, Microelectronics Reliability, 45 (5-6), pp.883-886. ⟨10.1016/j.microrel.2004.10.025⟩
International audience; The impact of hot electrons on gate oxide degradation is studied by investigating devices under constant voltage stress and substrate hot electron injection in thin silicon dioxide (2.5–1.5 nm). The build-up defects measured
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c2f0ec6a8ef0bf7532dbc3249db423ab
https://doi.org/10.1016/j.microrel.2004.10.025
https://doi.org/10.1016/j.microrel.2004.10.025
Autor:
S. Gomri, J. M. Moragues, C. Monserie, N. Legrand, Alain Bravaix, Didier Goguenheim, Philippe Boivin
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, 2005, Microelectronics Reliability, 45 (3-4), pp.487-492. ⟨10.1016/j.microrel.2004.09.004⟩
Microelectronics Reliability, 2005, Microelectronics Reliability, 45 (3-4), pp.487-492. ⟨10.1016/j.microrel.2004.09.004⟩
International audience; We have studied the possibility to use hot carrier stresses to reveal the latent damage due to Wafer Charging during plasma process steps in 0.18 μm and 0.6 μm CMOS technologies. We have investigated various hot carrier cond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ba8421b178e0bc7432aec911013aa072
https://doi.org/10.1016/j.microrel.2004.09.004
https://doi.org/10.1016/j.microrel.2004.09.004