Zobrazeno 1 - 10
of 66
pro vyhledávání: '"Didier Celi"'
Publikováno v:
On-Wafer Calibration Techniques Enabling Accurate Characterization of High-Performance Silicon Devices at the mm-Wave Range and Beyond ISBN: 9781003338994
This paper presents investigation results of the probe-tip calibration impact on the BiCMOS HBT small-signal parameter measurement accuracy. Popular calibration procedures were applied on the same data set and followed by the two-step de-embedding fr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f34ec3177f572383b42da38407cf9987
https://doi.org/10.1201/9781003338994-24
https://doi.org/10.1201/9781003338994-24
Publikováno v:
IEEE Transactions on Electron Devices. 68:491-496
In this article, we present and evaluate compact static thermal model parameter extraction techniques for modern silicon germanium heterojunction bipolar transistors (SiGe HBTs). We found that the model implementation of thermal resistance ( ${R}_{\t
Electro-Thermal Limitations and Device Degradation of SiGe HBTs with Emphasis on Circuit Performance
Autor:
Sebastien Fregonese, Chhandak Mukherjee, Holger Rucker, Pascal Chevalier, Gerhard Fischer, Didier Celi, Marina Deng, Marine Couret, Francois Marc, Cristell Maneux, Thomas Zimmer
Publikováno v:
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
Autor:
Didier Celi, Nicolas Derrier, Thomas Zimmer, Magali De Matos, Marina Deng, Sebastien Fregonese
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, 2021, 68 (12), pp.6007-6014. ⟨10.1109/TED.2021.3118671⟩
IEEE Transactions on Electron Devices, 2021, 68 (12), pp.6007-6014. ⟨10.1109/TED.2021.3118671⟩
International audience; The measurement of the figures of merit (FOMs) of an advanced and miniaturized transistor becomes a challenge when its fMAX goes above many hundreds of GHz. In fact, the quantities to be measured become smaller and smaller and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::41e2d8a2afa08333731a5907c286e976
https://hal.science/hal-03776416/file/IEEE_TED_Fregonese_Probes_110GHz_AFT_review_3_clean.pdf
https://hal.science/hal-03776416/file/IEEE_TED_Fregonese_Probes_110GHz_AFT_review_3_clean.pdf
Autor:
Marco Cabbia, Thomas Zimmer, Didier Celi, Chandan Yadav, Arnaud Curutchet, Magali De Matos, Marina Deng, Sebastien Fregonese
Publikováno v:
2020 50th European Microwave Conference (EuMC)
2020 50th European Microwave Conference (EuMC), Jan 2021, Utrecht, France. pp.979-982, ⟨10.23919/EuMC48046.2021.9338177⟩
2020 50th European Microwave Conference (EuMC), Jan 2021, Utrecht, France. pp.979-982, ⟨10.23919/EuMC48046.2021.9338177⟩
In this work we present high frequency measurement results up to the WR-3 band (220-330 GHz) of test structures and a SiGe HBT calibrated with novel transmission line standards employing a meandering architecture for thru and lines, aiming to keep th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::afd940cfef196726e34cbd4032720b71
https://hal.archives-ouvertes.fr/hal-03173013
https://hal.archives-ouvertes.fr/hal-03173013
Autor:
A. Fleury, J. Azevedo Goncalves, I. Sicard, J. Uginet, C. Renard, Charles-Alexandre Legrand, E. Brezza, Nicolas Guitard, Frederic Paillardet, G. Bertrand, M.-L. Rellier, Raphael Paulin, Nathalie Vulliet, M. Buczko, Patrice Garcia, Y. Mourier, Olivier Kermarrec, L. Boissonnet, Cedric Durand, J. Borrel, Pascal Chevalier, D. Ney, Sebastien Cremer, Alexis Gauthier, N. Pelloux, Patrick Scheer, F. Foussadier, Frederic Monsieur, L. Garchery, J. Lajoinie, V. Milon, Didier Celi, E. Canderle, C. Diouf, Eric Granger, N. Derrier, Daniel Gloria, Andre Juge, D. Muller, Frederic Gianesello, A. Pallotta
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
While 5G wireless networks are currently deployed around the world, preliminary research activities have begun to look beyond 5G and conceptualize 6G standard. Although it is envisioned that 6G may bring an unprecedent transformation of the wireless
Publikováno v:
BCICTS
A concise overview on the features of the most recently released version 3.0.0 of the industry standard compact bipolar transistor model HICUM/L2 is provided. The focus here is on the development of the model over the past ten years since its detaile
Autor:
Soumya Ranjan Panda, Magali De Matos, Marina Deng, Didier Celi, Sebastien Fregonese, Chandan Yadav, Thomas Zimmer, Marco Cabbia, Anjan Chakravorty
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2020, 67 (11), pp.4770-4776. ⟨10.1109/TED.2020.3022603⟩
IEEE Transactions on Electron Devices, 2020, 67 (11), pp.4770-4776. ⟨10.1109/TED.2020.3022603⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2020, 67 (11), pp.4770-4776. ⟨10.1109/TED.2020.3022603⟩
IEEE Transactions on Electron Devices, 2020, 67 (11), pp.4770-4776. ⟨10.1109/TED.2020.3022603⟩
International audience; Terahertz (THz) silicon-based electronics is undergoing rapid developments. In order to keep this momentum high, an accurate and optimized on-wafer characterization procedure needs to be developed. While evaluating passive ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1d9f7f1ed65ed6bed0b10cc5122a4185
https://hal.archives-ouvertes.fr/hal-03015012
https://hal.archives-ouvertes.fr/hal-03015012
Autor:
Cristell Maneux, François Marc, Didier Celi, Klaus Aufinger, G.G. Fischer, Chhandak Mukherjee, Thomas Zimmer, Mathieu Jaoul, Marine Couret
Publikováno v:
Solid-State Electronics
Solid-State Electronics, Elsevier, 2020, 163, pp.107635. ⟨10.1016/j.sse.2019.107635⟩
Solid-State Electronics, Elsevier, 2020, 163, pp.107635. ⟨10.1016/j.sse.2019.107635⟩
This paper presents a new physics-based compact model implementation for interface state creation due to hot-carrier degradation in advanced SiGe HBTs. This model accounts for dynamic stress bias conditions through a combination of the solution of re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f5089db6744eb7688e1d13db48a9e464
https://hal.archives-ouvertes.fr/hal-02475429/document
https://hal.archives-ouvertes.fr/hal-02475429/document
Publikováno v:
2020 94th ARFTG Microwave Measurement Symposium (ARFTG)
In this paper, we present an in-situ thru-reflect-line (TRL) calibration and de-embedding kit that sets the reference plane in close proximity to the device under test. This is made possible thanks to the realization of the standards at the metal3 BE