Zobrazeno 1 - 10
of 247
pro vyhledávání: '"Dianzhong Wen"'
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 6, Pp n/a-n/a (2024)
Abstract The realization of artificial synapses based on biomaterials is of great significance for the development of environmentally friendly neuromorphic hardware systems and artificial intelligence. In this sense, a bioartificial synapse composite
Externí odkaz:
https://doaj.org/article/31df17788d9d4bd4894ec6a9dd8350f5
Publikováno v:
Advanced Science, Vol 11, Iss 19, Pp n/a-n/a (2024)
Abstract Owing to the highly parallel network structure of the biological neural network and its triggered processing mode, tactile sensory neurons can realize the perception of external signals and the functions of perception, memory, and data proce
Externí odkaz:
https://doaj.org/article/30050e01367342d1bed3b3dc11b830c1
Publikováno v:
Micromachines, Vol 15, Iss 3, p 412 (2024)
In order to realize the measurement of three-axis acceleration, pressure, and magnetic field, monolithic integrated three-axis acceleration/pressure/magnetic field sensors are proposed in this paper. The proposed sensors were constructed with an acce
Externí odkaz:
https://doaj.org/article/978ecc6e0fb747e98693ec2657e1952d
Publikováno v:
Nanomaterials, Vol 13, Iss 23, p 3021 (2023)
By doping a dielectric layer material and improving the device’s structure, the electrical characteristics of a memristor can be effectively adjusted, and its application field can be expanded. In this study, graphene quantum dots are embedded in t
Externí odkaz:
https://doaj.org/article/978d07b8a6a74ef39268a3f522440727
Publikováno v:
Nanomaterials, Vol 13, Iss 23, p 3012 (2023)
As artificial synapse devices, memristors have attracted widespread attention in the field of neuromorphic computing. In this paper, Al/polymethyl methacrylate (PMMA)/egg albumen (EA)–graphene quantum dots (GQDs)/PMMA/indium tin oxide (ITO) electri
Externí odkaz:
https://doaj.org/article/f372f6483ee1419982af9dba3650aea8
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 4, Pp n/a-n/a (2023)
Abstract Most current resistive memory has the problems of high and unstable threshold voltages and high device misread rates caused by low current switching ratios. To address these problems, an Al/poly(methyl methacrylate) (PMMA)/silkworm hemolymph
Externí odkaz:
https://doaj.org/article/ed20a9eba4c74bcc8f486c1653cf7af1
Publikováno v:
Micromachines, Vol 14, Iss 2, p 430 (2023)
This work researched the effects of irradiation on the current-voltage characteristics and voltage magnetic sensitivity of the silicon magnetic sensitive transistor (SMST). The 1-MeV electron irradiation source was used to irradiate the SMST. The irr
Externí odkaz:
https://doaj.org/article/d96cd3102a5547d4b71df61d5d84152f
Publikováno v:
Nanomaterials, Vol 12, Iss 22, p 3976 (2022)
Biomaterials have attracted attention as a major material for biodegradable and transient electronic devices. In this work, biocompatible gelatin-doped graphene quantum dot films are reported as active layer switching memories with good electrical pr
Externí odkaz:
https://doaj.org/article/2a0cffaa40594ed780f327891c162f51
Publikováno v:
Nanomaterials, Vol 12, Iss 20, p 3709 (2022)
In this paper, a floating-gate flexible nonvolatile memory is reported that is composed of natural biological materials, namely, silkworm hemolymph, graphene quantum dots as the floating-gate layer, and polymethyl methacrylate (PMMA) as the insulatin
Externí odkaz:
https://doaj.org/article/433205d040c64eb38ed4eb8bfd507b36
Publikováno v:
Nanomaterials, Vol 12, Iss 19, p 3531 (2022)
Physical transient electronics have attracted more attention as the basis for building green electronics and biomedical devices. However, there are difficulties in selecting materials for the fabricated devices to take into account both biodegradabil
Externí odkaz:
https://doaj.org/article/05762c252ecc4b6f834ac9f5bb4ef38f