Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Dianyu, Qi"'
Autor:
Yance Chen, Yue Dai, Srikrishna Chanakya Bodepudi, Xinyu Liu, Yuan Ma, Shiyu Xing, Dawei Di, Feng Tian, Xin Ming, Yingjun Liu, Kai Pang, Fei Xue, Yunyan Zhang, Zexin Yu, Yaping Dan, Oleksiy V. Penkov, Yishu Zhang, Dianyu Qi, Wenzhang Fang, Yang Xu, Chao Gao
Publikováno v:
InfoMat, Vol 6, Iss 9, Pp n/a-n/a (2024)
Abstract The demand for high‐performance X‐ray detectors leads to material innovation for efficient photoelectric conversion and carrier transfer. However, current X‐ray detectors are often susceptible to chemical and irradiation instability, c
Externí odkaz:
https://doaj.org/article/79722a9ead564190b74b7e1300dffaee
Autor:
Zhiwei Li, Jidong Liu, Haohui Ou, Yutao Hu, Jiaqi Zhu, Jiarui Huang, Haolin Liu, Yudi Tu, Dianyu Qi, Qiaoyan Hao, Wenjing Zhang
Publikováno v:
Nanomaterials, Vol 14, Iss 4, p 382 (2024)
Two-dimensional material indium selenide (InSe) holds great promise for applications in electronics and optoelectronics by virtue of its fascinating properties. However, most multilayer InSe-based transistors suffer from extrinsic scattering effects
Externí odkaz:
https://doaj.org/article/c8699c5f79dc41ad93b9fbf24b245fc4
Autor:
Zixuan Wang, Wenshuo Xu, Benxuan Li, Qiaoyan Hao, Di Wu, Dianyu Qi, Haibo Gan, Junpeng Xie, Guo Hong, Wenjing Zhang
Publikováno v:
Nanomaterials, Vol 12, Iss 10, p 1696 (2022)
Vertical and lateral heterostructures consisting of atomically layered two-dimensional (2D) materials exhibit intriguing properties, such as efficient charge/energy transfer, high photoresponsivity, and enhanced photocatalytic activities. However, th
Externí odkaz:
https://doaj.org/article/80585e444348476f8430cf6ba5004562
Autor:
Xinmao Yin, Chi Sin Tang, Di Wu, Weilong Kong, Changjian Li, Qixing Wang, Liang Cao, Ming Yang, Yung‐Huang Chang, Dianyu Qi, Fangping Ouyang, Stephen J. Pennycook, Yuan Ping Feng, Mark B. H. Breese, Shi Jie Wang, Wenjing Zhang, Andrivo Rusydi, Andrew T. S. Wee
Publikováno v:
Advanced Science, Vol 6, Iss 7, Pp n/a-n/a (2019)
Abstract 2D transition metal dichalcogenides (2D‐TMDs) and their unique polymorphic features such as the semiconducting 1H and quasi‐metallic 1T′ phases exhibit intriguing optical and electronic properties, which can be used in novel electronic
Externí odkaz:
https://doaj.org/article/4b301b039e1845289aa1e8f04c744473
Autor:
Dianyu Qi, Peng Li, Haohui Ou, Di Wu, Weiguang Lian, Zhuo Wang, Fangping Ouyang, Yang Chai, Wenjing Zhang
Publikováno v:
Advanced Functional Materials.
Autor:
Jidong Liu, Qiaoyan Hao, Haibo Gan, Peng Li, Benxuan Li, Yudi Tu, Jingting Zhu, Dianyu Qi, Yang Chai, Wenjing Zhang, Fei Liu
Publikováno v:
Laser & Photonics Reviews. 16
Publikováno v:
ACS Applied Electronic Materials. 2:920-926
High-performance field-effect transistors based on two-dimensional (2D) semiconductors have been realized, but they often exhibit inherent transport property. Local p- and n-doping on same the semi...
Autor:
Cheng Han, Xiuwen Zhang, Wenjing Zhang, Andrew T. S. Wee, Dianyu Qi, Ximing Rong, Manish Chhowalla
Publikováno v:
ACS Nano. 13:9464-9472
Semiconducting molybdenum ditelluride (2H-MoTe2), a two-dimensional (2D) transition metal dichalcogenide, has attracted extensive research attention due to its favorable physical properties for future electronic devices, such as appropriate bandgap,
Autor:
Dianyu Qi, Yuxuan Ke, Huan Yi, Sisi Tang, Qiaoyan Hao, Weilong Dong, Wenjing Zhang, Jidong Liu
Publikováno v:
Nanoscale. 12(37)
van der Waals heterostructures of two-dimensional (2D) materials have attracted considerable attention due to their flexibility in the design of new functional devices. Despite numerous studies on graphene/2D semiconductor heterostructures, their opt
Autor:
Qiaoyan Hao, Huan Yi, Jidong Liu, Yi Wang, Jiewei Chen, Xinmao Yin, Chi Sin Tang, Dianyu Qi, Haibo Gan, Andrew T. S. Wee, Yang Chai, Wenjing Zhang
Publikováno v:
Advanced Optical Materials. 10:2200063