Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Dianlun Li"'
Autor:
Penghao Tang, Zaifa Du, Weiling Guo, Yongai Zhang, Tailiang Guo, Jie Sun, Qun Yan, Fangzhu Xiong, Dianlun Li, Xiongtu Zhou
Publikováno v:
IEEE Electron Device Letters. 42:1184-1187
The quantum dot (QD) color-conversion efficiency (CCE) in GaN micro-light-emitting diodes ( $\mu $ LEDs) is greatly improved by non-radiative energy transfer (NRET) mechanism. An array of deep nano-holes with a diameter of about $1~\mu \text{m}$ was
Publikováno v:
Nanotechnology Reviews, Vol 9, Iss 1, Pp 876-885 (2020)
Uniform and continuous Al2O3 thin films were prepared by the chemical liquid deposition (CLD) method. The breakdown field strength of the amorphous CLD-Al2O3 film is 1.74 MV/cm, making it could be used as a candidate dielectric film for electronic de
Autor:
Dianlun Li
Publikováno v:
Chinese Journal of Luminescence. 41:1309-1317
Publikováno v:
Applied Physics A. 126
Deep reactive ion etching (DRIE) technology is one of the most important technologies in the processing of microelectronic devices and microelectromechanical system. As a necessary process in semiconductor integration, it has been widely studied in t
Autor:
Ye Liu, Shanhong Lv, Dianlun Li, Xiongtu Zhou, Chaoxing Wu, Guo Tailiang, Yongai Zhang, Kun Wang
Publikováno v:
Scientific Reports
Scientific Reports, Vol 10, Iss 1, Pp 1-8 (2020)
Scientific Reports, Vol 10, Iss 1, Pp 1-8 (2020)
Stable electroluminescence from micro-pixelated light-emitting diode (μLED) occurs when electrons and holes are continuously injected from external electrodes. Different from the general recognition, in this work, μLED works in an operation mode, n
Autor:
Kun Wang, Dianlun Li, Tae Whan Kim, Jiaxin Wang, Ye Liu, Zhirong Qiu, Lu Ruan, Tailiang Guo, Chaoxing Wu, Yufei Zhang, Jintang Lin
Publikováno v:
Nano Energy. 75:104818
Zinc oxide (ZnO) acting as a versatile material for electronic and optoelectronic devices shows promising applications in triboelectric nanogenerator (TENG)-based self-powered electronics. However, the output performances of ZnO-based TENG are relati