Zobrazeno 1 - 1
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pro vyhledávání: '"Diane Marie Scheele"'
Publikováno v:
ECS Transactions. 25:117-120
As the technology nodes shrink, device makers are running into barriers with traditional post etch process flows. In the back-end-of-line (BEOL), the porous low-k materials can be damaged by the etch chemistries, the dry ash plasmas and the subsequen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d1701a58cb10bc71f92f050d87c5e7e1
https://doi.org/10.1149/1.3202643
https://doi.org/10.1149/1.3202643
