Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Diane Carol Freeman"'
Publikováno v:
Journal of Display Technology. 5:484-494
We report on zinc oxide (ZnO)-based devices produced by a fast, open-air atomic layer deposition (ALD) process relying upon the spatial isolation of reactive gases. At deposition rates of greater than 100 Aring per minute, ZnO-based thin-film transis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c61fe8d7faf3d337fc16982593130c2
https://doi.org/10.1109/jdt.2009.2022770
https://doi.org/10.1109/jdt.2009.2022770
Autor:
Wendy G. Ahearn, Shelby F. Nelson, Manju Rajeswaran, Deepak Shukla, Dianne M. Meyer, Diane Carol Freeman, Jeffrey Todd Carey
Publikováno v:
Chemistry of Materials. 20:7486-7491
In organic thin film transistors (OTFT), the morphology and microstructure of an organic thin film has a strong impact on the charge carrier mobility and device characteristics. To have well-defined and predictable thin film morphology, it is necessa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0b30e075d592f86097cee80e8c7d06b
https://doi.org/10.1021/cm802071w
https://doi.org/10.1021/cm802071w
Autor:
Diane Carol Freeman, David H. Levy, Shelby F. Nelson, Lee W. Tutt, Jie Sun, Sung Kyu Park, Dalong Zhao, Peter J. Cowdery-Corvan, Thomas N. Jackson, Devin A. Mourey
Publikováno v:
IEEE Electron Device Letters. 29:721-723
We have fabricated ring oscillators (ROs) using ZnO thin films deposited by using a spatial atomic layer deposition process at atmospheric pressure and low temperature (200degC). Bottom-gate thin-film transistors with aluminum source and drain contac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbb7cc975d56c913e9a5d75db4a841e5
https://doi.org/10.1109/led.2008.923206
https://doi.org/10.1109/led.2008.923206
Publikováno v:
SID Symposium Digest of Technical Papers. 38:284-286
An ambient process was developed for producing both the dielectric and semiconductor layers of a zinc oxide-based thin-film transistor. The dielectric films exhibited good electrical properties, leading to devices with gate leakage less than 25 nA/cm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea8b6bab801eb504fff419fb04927df8
https://doi.org/10.1889/1.2785285
https://doi.org/10.1889/1.2785285
Autor:
Sung Kyu Park, Thomas N. Jackson, Shelby F. Nelson, Sheng-Chu Wu, Lisong Zhou, Jie Sun, Bo Bai, Yongtaek Hong, Diane Carol Freeman
Publikováno v:
IEEE Electron Device Letters. 26:640-642
Pentacene organic thin-film transistors (TFTs)-driven active matrix organic light-emitting diode (OLED) displays has been investigated. This letter addresses several process issues unique to this type of display which are important in achieving brigh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6622f2181907c15eb12aa7a3400799e0
https://doi.org/10.1109/led.2005.853654
https://doi.org/10.1109/led.2005.853654
Autor:
Mitchell Stewart Burberry, Diane Carol Freeman, David H. Levy, Peter J. Cowdery-Corvan, Lee W. Tutt, Lyn M. Irving, Shelby F. Nelson
Publikováno v:
2007 65th Annual Device Research Conference.
We have fabricated zinc oxide thin-film transistors using a novel ambient deposition process, with maximum temperature of 200degC. The TFTs deposited this way show sufficiently good properties to make them potentially applicable to OLED display backp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7dd0fc9c642a0b539bf77073e7f81e36
https://doi.org/10.1109/drc.2007.4373628
https://doi.org/10.1109/drc.2007.4373628
Autor:
Lee W. Tutt, Devin A. Mourey, Diane Carol Freeman, Sung Kyu Park, Thomas N. Jackson, Shelby F. Nelson, Peter J. Cowdery-Corvan, Jie Sun, David H. Levy, Dalong Zhao
Publikováno v:
2007 65th Annual Device Research Conference.
We report here five-stage ring-oscillator-integrated circuits fabricated using ZnO TFTs with signal propagation delays as low as 100 ns (>1 MHz oscillation frequency) for a 45 V supply voltage. These circuits also operate at a supply voltage as low a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1adcc6632549b1c450b0412f5c8d86c
https://doi.org/10.1109/drc.2007.4373631
https://doi.org/10.1109/drc.2007.4373631
Autor:
Devin A. Mourey, Lee W. Tutt, Peter J. Cowdery-Corvan, Sung Kyu Park, David H. Levy, Dalong Zhao, Shelby F. Nelson, Jie Sun, Diane Carol Freeman, Thomas N. Jackson
Publikováno v:
2007 IEEE International Electron Devices Meeting.
We have fabricated simple circuits, including ring oscillators, using ZnO thin films deposited by low temperature (200degC) atmospheric pressure chemical vapor deposition. Bottom gate TFTs with aluminum source and drain contacts typically had field e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e08972ad000085d5fbbce92343f1a039
https://doi.org/10.1109/iedm.2007.4419005
https://doi.org/10.1109/iedm.2007.4419005
Autor:
Alfred Wanga, Jie Sun, Thomas N. Jackson, Diane Carol Freeman, Sheng Chu Wu, Shelby F. Nelson, Sung Kyu Park, Yongtaek Hong, Lisong Zhou
Publikováno v:
SPIE Proceedings.
We have fabricated pentacene organic thin-film transistor (OTFT) driven active matrix organic light-emitting diode (OLED) displays on both glass and flexible polyethylene terephthalete (PET) substrates. These displays have 48 × 48 bottom-emission OL
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a60555c548d1f46b6a800657c10b417
https://doi.org/10.1117/12.666613
https://doi.org/10.1117/12.666613
Publikováno v:
Applied Physics Letters. 92:192101
We report stable, high performance zinc oxide thin film transistors grown by an atmospheric pressure atomic layer deposition system. With all deposition and processing steps kept at or below 200°C, the alumina gate dielectric shows low leakage (belo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41804b6bf58b42381a4b8462d9c001e0
https://doi.org/10.1063/1.2924768
https://doi.org/10.1063/1.2924768