Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Diana Tsvetanova"'
Autor:
V. D. Nguyen, Bart Sorée, Dmitri E. Nikonov, Y. Canvel, Thibaut Devolder, Inge Asselberghs, Kevin Garello, Sebastien Couet, Danny Wan, A. Thiam, Laurent Souriau, Diana Tsvetanova, O. Bultynck, M. Heyns, Eline Raymenants, Ian A. Young, Iuliana Radu
Publikováno v:
Nature Electronics
Nature Electronics, Springer Nature, 2021, 4 (6), pp.392-398. ⟨10.1038/s41928-021-00593-x⟩
Nature Electronics, 2021, 4 (6), pp.392-398. ⟨10.1038/s41928-021-00593-x⟩
Nature Electronics, Springer Nature, 2021, 4 (6), pp.392-398. ⟨10.1038/s41928-021-00593-x⟩
Nature Electronics, 2021, 4 (6), pp.392-398. ⟨10.1038/s41928-021-00593-x⟩
The manipulation of fast domain wall motion in magnetic nanostructures could form the basis of novel magnetic memory and logic devices. However, current approaches for reading and writing domain walls require external magnetic fields, or are based on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a920a9e5634dad18ff0e29515084be61
https://hal.archives-ouvertes.fr/hal-03272035
https://hal.archives-ouvertes.fr/hal-03272035
Autor:
Iuliana Radu, Y. Canvel, Stefania Pizzini, V. D. Nguyen, Marc Heyns, Diana Tsvetanova, Sebastien Couet, Inge Asselberghs, Dmitri E. Nikonov, Gouri Sankar Kar, Laurent Souriau, Ian A. Young, Kevin Garello, Danny Wan, A. Thiam, Eline Raymenants
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, 2021, 68 (4), pp.2116-2122. ⟨10.1109/TED.2021.3061523⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2021, 68 (4), pp.2116-2122. ⟨10.1109/TED.2021.3061523⟩
IEEE Transactions on Electron Devices, 2021, 68 (4), pp.2116-2122. ⟨10.1109/TED.2021.3061523⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2021, 68 (4), pp.2116-2122. ⟨10.1109/TED.2021.3061523⟩
Spin logic devices based on domain wall (DW) motion offer flexible architectures to store and carry logic information in a circuit. In this device concept, information is encoded in the magnetic state of a magnetic track shared by multiple magnetic t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::39865b190d4bd314f8f9a8f3a7b00d4a
https://hal.science/hal-03239789
https://hal.science/hal-03239789
Autor:
Lieve Teugels, Attilio Belmonte, H. Oh, Ludovic Goux, Ming Mao, Harinarayanan Puliyalil, Zsolt Tokei, Luka Kljucar, G. L. Donadio, Jerome Mitard, Diana Tsvetanova, Nouredine Rassoul, Harold Dekkers, K. Banerjee, Gouri Sankar Kar, Adrian Chasin, Romain Delhougne, M. J. van Setten, M. Pak, Subhali Subhechha, Laurent Souriau
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
We report for the first time a fully 300-mm stacking-compatible capacitor-less DRAM cell with >400s retention time by integrating two IGZO-TFTs in a 2T0C configuration. We optimize the single IGZO-TFT performances by engineering the materials surroun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4834d58f9313875f9c2a12210fa65ee3
https://doi.org/10.1109/iedm13553.2020.9371900
https://doi.org/10.1109/iedm13553.2020.9371900
Autor:
M.M. Heyns, Danny Wan, Inge Asselberghs, Laurent Souriau, Dmitri E. Nikonov, Eline Raymenants, A. Thiam, Ian A. Young, Stefania Pizzini, Y. Canvel, Iuliana Radu, Diana Tsvetanova, V. D. Nguyen, Sebastien Couet
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
Spin logic devices based on domain wall (DW) motion offer flexible architectures to store and carry logic information in a circuit. In this device concept, information is encoded in the magnetic state of a magnetic track shared by multiple magnetic t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed18293bbd65fb7a4592211fcf0a0321
https://doi.org/10.1109/iedm13553.2020.9372127
https://doi.org/10.1109/iedm13553.2020.9372127
Autor:
Danny Wan, Sebastien Couet, Xiaoyu Pao, Laurent Souriau, Diana Tsvetanova, Diziana Vangoidsenhoven, Arame Thiam, Antoine Pacco, Anton Potocnik, Massimo Mongillo, Tsvetan Ivanov, Julien Jussot, Jeroen Verjauw, Rohith Acharya, Jeroen Heijlen, GabrieleLuca Donadio, Bogdan Govoreanu, Frederic Lazzarino, Iuliana Radu
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63f5a4a499f5ea65fed2d1c8d159e992
https://doi.org/10.7567/ssdm.2020.i-4-03
https://doi.org/10.7567/ssdm.2020.i-4-03
Autor:
Geert Mannaert, Lars-Ake Ragnarsson, Els Van Besien, A. Dangol, Adrian Chasin, Diana Tsvetanova, Soon Aik Chew, S. Kubicek, Romain Ritzenthaler, Harold Dekkers, Andriy Hikavyy, Dan Mocuta, Hans Mertens, Naoto Horiguchi, Yoshiaki Kikuchi, Tom Schram, Erik Rosseel, An De Keersgieter, Zheng Tao, Kathy Barla, Katia Devriendt, Eddy Kunnen, Toby Hopf, Min-Soo Kim, Kurt Wostyn, Steven Demuynck
Publikováno v:
ECS Transactions. 77:19-30
Gate-all-around (GAA) transistors based on vertically stacked horizontal nanowires are promising candidates to replace FinFETs in future CMOS technology nodes. First of all, GAA devices provide optimal electrostatic control over semiconducting nanowi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3df56b170bbc0db760b5a7d93692a017
https://doi.org/10.1149/07705.0019ecst
https://doi.org/10.1149/07705.0019ecst
Autor:
Massimo Mongillo, Frederic Lazzarino, Sebastian Couet, Jeroen Verjauw, Tsvetan Ivanov, J. Jussot, Danny Wan, X. Piao, Y. Canvel, Bogdan Govoreanu, Iuliana Radu, Diziana Vangoidsenhoven, Diana Tsvetanova, A. Thiam, Laurent Souriau, A. Potocnik, Rohith Acharya, Antoine Pacco
Publikováno v:
Japanese Journal of Applied Physics. 60:SBBI04
We present the development of Nb/Al–AlO x /Nb trilayer stacks and the implementation of a full 300 mm process flow for the fabrication of trilayer-based superconducting qubits. Room temperature electrical characterization of tens of thousands of Jo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2702bbca8b5f7e856c114d53fa63ac70
https://doi.org/10.35848/1347-4065/abe5bb
https://doi.org/10.35848/1347-4065/abe5bb
Autor:
Sofie Mertens, T. Lin, Geoffrey Pourtois, Laurent Souriau, Yoann Tomczak, Johan Swerts, Kiroubanand Sankaran, Arnaud Furnemont, Sven Van Elshocht, Woojin Kim, Sebastien Couet, Diana Tsvetanova, Enlong Liu, Gouri Sankar Kar
Publikováno v:
IEEE Transactions on Magnetics. 52:1-4
Spin-transfer torque magnetic random access memory (STT-MRAM) is currently explored to challenge the dynamic random access memory and embedded memory applications. Perpendicular magnetic tunnel junction (p-MTJ) stacks used in the STT-MRAM must be com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53c1debbaaf8b1d010db5985e8f9c173
https://doi.org/10.1109/tmag.2016.2515109
https://doi.org/10.1109/tmag.2016.2515109
Autor:
Diana Tsvetanova, G. L. Donadio, T. Lin, Sebastien Couet, D. Crotti, Siddharth Rao, Yoann Tomczak, Laurent Souriau, Gouri Sankar Kar, Kiroubanand Sankaran, Johan Swerts, Simon Van Beek, Ludovic Goux, Woojin Kim, Arnaud Furnemont
Publikováno v:
IEEE Transactions on Magnetics. 52:1-4
Low write error rate (WER) is an important requirement for spin-transfer torque magnetic random access memory to be developed as a product. However, there have been reports about back-hopping phenomena that disturb achieving low WER. We demonstrate t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a11c447fbabe4e5957767d756642910
https://doi.org/10.1109/tmag.2016.2536158
https://doi.org/10.1109/tmag.2016.2536158
Autor:
Manuel Baumgartner, N. Jossart, Johan Swerts, S. Van Beek, D. Crotti, Eva Grimaldi, Pietro Gambardella, Gouri Sankar Kar, Shreya Kundu, F. Yasin, Laurent Souriau, Kevin Garello, Sebastien Couet, Diana Tsvetanova, Enlong Liu, A. Fumemont, W. Kim, Kristof Croes, Siddharth Rao
Publikováno v:
VLSI Circuits
2018 IEEE Symposium on VLSI Circuits
2018 IEEE Symposium on VLSI Circuits, Jun 2018, Honolulu, United States. pp.81-82, ⟨10.1109/VLSIC.2018.8502269⟩
Proceedings of the 2018 IEEE Symposium on VLSI Circuits
2018 IEEE Symposium on VLSI Circuits
2018 IEEE Symposium on VLSI Circuits, Jun 2018, Honolulu, United States. pp.81-82, ⟨10.1109/VLSIC.2018.8502269⟩
Proceedings of the 2018 IEEE Symposium on VLSI Circuits
We demonstrate for the first time full-scale integration of top-pinned perpendicular MTJ on 300 mm wafer using CMOS-compatible processes for spin-orbit torque (SOT)-MRAM architectures. We show that 62 nm devices with a W-based SOT underlayer have ver
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a75051dd8003aabdeb9c8add87fb9d6c