Zobrazeno 1 - 10
of 89
pro vyhledávání: '"Diana Nesheva"'
Autor:
Radka Gegova-Dzhurkova, Diana Nesheva, Irina Stambolova, Katerina Zaharieva, Valeri Dzhurkov, Ilko Miloushev
Publikováno v:
Molecules, Vol 29, Iss 17, p 4005 (2024)
Semiconductor oxides are frequently used as active photocatalysts for the degradation of organic agents in water polluted by domestic industry. In this study, sol-gel ZnO thin films with a grain size in the range of 7.5–15.7 nm were prepared by app
Externí odkaz:
https://doaj.org/article/500628615b4846d9a590904e50d7f192
Autor:
Mario Curiel, Nicola Nedev, Judith Paz, Oscar Perez, Benjamin Valdez, David Mateos, Abraham Arias, Diana Nesheva, Emil Manolov, Roumen Nedev, Valeri Dzhurkov
Publikováno v:
Sensors, Vol 19, Iss 10, p 2277 (2019)
Selective UV sensitivity was observed in Metal-Oxide-Semiconductor structures with Si nanoclusters. Si nanocrystals and amorphous Si nanoparticles (a-Si NPs) were obtained by furnace annealing of SiOx films with x = 1.15 for 60 min in N2 at 1000 and
Externí odkaz:
https://doaj.org/article/48004fd151f444b18283afc0151462b2
Autor:
Diana Nesheva
Publikováno v:
ACS Omega. 8:12603-12612
Autor:
Diana Nesheva, V Dzhurkov, Roumen Nedev, E. Manolov, Benjamin Valdez, Mario Curiel, J. Paz, N Nedev, David Mateos, Abraham Arias, M. Ramirez, Oscar Perez
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:17412-17421
SiOx layers with x = 1.15 and 1.3 and thicknesses of 50 and 100 nm were deposited on crystalline silicon wafers by thermal evaporation in vacuum. Part of the samples were annealed at 250 °C (control samples), while the rest were annealed at temperat
Autor:
Z. Levi, Diana Nesheva, Maja Šćepanović, V Dzhurkov, Zoran B. Popović, E. Manolov, M. Grujić-Brojčin, I. Bineva, V. Mihailov, R. Gegova-Dzhurkova
The surface morphology and structure of zinc oxide thin films play a key role in many applications such as chemical sensors and photocatalysts. In this study, ZnO thin films are prepared on Si/SiO2 substrates by spin-coating sol–gel technique. New
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3f46a73c9b39f0c807406aef20bf4095
Autor:
Diana Nesheva, Maja Šćepanović, S. Kaschieva, Benjamin Kalas, T. Hristova-Vasileva, Zsolt Fogarassy, Krassimira Antonova, Peter Petrik, Sergei N. Dmitriev
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 458:159-163
Homogeneous films from SiOx (x = 1.2, 1.3) were deposited on crystalline Si substrates by thermal evaporation of silicon monoxide in vacuum. A part of the films was further annealed at 1000 °C to grow Si nanocrystals in a silicon dioxide matrix. Hom
Autor:
Diana Nesheva, V Dzhurkov, M. Vasileva, Tsvetanka Babeva, N Nedev, Benjamín Valdez-Salas, M. Grujić-Brojčin, Oscar Perez, T. Sreckovic, Maja Šćepanović, Mario Curiel
Publikováno v:
Journal of Alloys and Compounds. 798:394-402
The anodic oxidation method is applied for preparation of TiO2 nanotube (NT) arrays on Ti6Al4V alloy substrates. The NTs were of four different diameters (60, 65, 80 and 120 nm) and wall thicknesses in the range 8–14 nm. The as-prepared samples wer
Nanocrystalline layers of ZnSe with thickness in the range 30-150 nm are deposited on Corning 7059 glass substrates at room temperature by thermal evaporation of ZnSe in vacuum. Periodically interrupted vapor deposition is used at various deposition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::236bc4e1d7a4f2042b23cd464f26f096
https://doi.org/10.9734/bpi/nupsr/v3/8080d
https://doi.org/10.9734/bpi/nupsr/v3/8080d
Autor:
Silviu Preda, I. Bineva, Irina Stambolova, Jose Maria Calderon Moreno, Diana Nesheva, V Dzhurkov, Vladimir Blaskov, M. Shipochka, Mariuca Gartner, T. Hristova-Vasileva
Publikováno v:
Materials Chemistry and Physics. 209:165-171
Sol gel prepared nanocrystalline ZnO thin films are modified by combined usage of complexing agent (diethanolamine or monoethanolamine) and polymer (hydroxypropyl cellulose or ethylcellulose) in the initial sol. X-ray diffraction, Scanning electron m
Publikováno v:
Surface and Coatings Technology. 307:542-546
Amorphous selenium and crystalline tellurium thin films were deposited by frequency assisted thermal deposition in vacuum – a new approach for preparation of thin films based on condensation of the evaporated material on an excited substrate, at wh