Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Diana Nechepurenko"'
Autor:
Taras Voitsitskyi, Roman Stratiichuk, Ihor Koleiev, Leonid Popryho, Zakhar Ostrovsky, Pavlo Henitsoi, Ivan Khropachov, Volodymyr Vozniak, Roman Zhytar, Diana Nechepurenko, Semen Yesylevskyy, Alan Nafiiev, Serhii Starosyla
Publikováno v:
RSC Advances. 13:10261-10272
We propose a new deep learning DTA model 3DProtDTA, which utilises AlphaFold structure predictions in conjunction with the graph representation of proteins.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::579afdf47757ba4690d2a46700808a88
https://doi.org/10.1039/d3ra00281k
https://doi.org/10.1039/d3ra00281k
Autor:
Taras Voitsitskyi, Roman Stratiichuk, Ihor Koleiev, Leonid Popryho, Zakhar Ostrovsky, Pavel Henitsoi, Ivan Khropachev, Volodymyr Vozniak, Roman Zhytar, Diana Nechepurenko, Semen Yesylevskyy, Alan Nafiev, Serhii Starosyla
Accurate prediction of the drug-target affinity (DTA)in silicois of critical importance for modern drug discovery. Computational methods of DTA prediction, applied in the early stages of drug development, are able to speed it up and cut its cost sign
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::126eeacb98a78fea24d1f73458a326d5
https://doi.org/10.1101/2022.11.24.517815
https://doi.org/10.1101/2022.11.24.517815
Autor:
Yana Krivoshapkina, Diana Nechepurenko, Claudia Lenk, Steve Lenk, Ahmad Ahmad, Mervyn Jones, B. E. Volland, Tzvetan Ivanov, Zahid A. K. Durrani, Marcus Kaestner, Martin Hofmann, Chen Wang, Mathias Holz, Alexander Reum, Ivo W. Rangelow
Publikováno v:
Microelectronic Engineering. 192:77-82
Building low-power and high-density circuits requires new devices, which can be based for example on single electron effects. Single electron transistors (SET), which can operate at room temperature (RT), are candidates with high potential for the po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b03c9c5f8324836d1360b328a81dd2cf
https://doi.org/10.1016/j.mee.2018.01.022
https://doi.org/10.1016/j.mee.2018.01.022
Autor:
Steve Lenk, Claudia Lenk, N. Nikolov, Mathias Holz, Alexander Reum, Daniel Staaks, Zahid A. K. Durrani, Diana Nechepurenko, Elshad Guliyev, Deirdre L. Olynick, Stefano Dallorto, Marcus Kaestner, Tzvetan Ivanov, Dixi Liu, Ahmad Ahmad, Valentyn Ishchuk, Teodor Gotszalk, Tihomir Angelov, Mervyn Jones, Chen Wang, Martin Hofmann, Ivaylo Atanasov, Ivo W. Rangelow, Yana Krivoshapkina, Wojciech Majstrzyk, Burkhard E. Volland
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 34:06K202
Single-electron devices operating at room temperature require sub-5 nm quantum dots having tunnel junctions of comparable dimensions. Further development in nanoelectronics depends on the capability to generate mesoscopic structures and interfacing t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73fcc6c1284d5fd72ea0c35515de9b1f
https://doi.org/10.1116/1.4966556
https://doi.org/10.1116/1.4966556