Zobrazeno 1 - 10
of 411
pro vyhledávání: '"Diana L. Huffaker"'
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)
Abstract Integration of functional infrared photodetectors on silicon platforms has been gaining attention for diverse applications in the fields of imaging and sensing. Although III–V semiconductor is a promising candidate for infrared photodetect
Externí odkaz:
https://doaj.org/article/0e1d1b0671da4d13a7aab685da85e895
Publikováno v:
Advanced Photonics Research, Vol 3, Iss 2, Pp n/a-n/a (2022)
Mid‐wavelength infrared (MWIR) photodetectors (PDs) are highly essential for environmental sensing of hazardous gases, security, defense, and medical applications. Mercury cadmium telluride (MCT) materials have been the most used detector in the MW
Externí odkaz:
https://doaj.org/article/f2c49644eca44cbf98234c148d82e95e
Publikováno v:
IEEE Photonics Journal, Vol 12, Iss 4, Pp 1-8 (2020)
GaAs based nanowire single photon avalanche diode (SPAD) has been demonstrated with extremely small afterpulsing probability and low dark count rate, and hence it has attracted wide attention for the near infrared applications. However, there is a la
Externí odkaz:
https://doaj.org/article/1e7ef0eea4724e639726082d9d06ab25
Autor:
Ying Wang, Xinzhi Sheng, Qinglin Guo, Xiaoli Li, Shufang Wang, Guangsheng Fu, Yuriy I. Mazur, Yurii Maidaniuk, Morgan E. Ware, Gregory J. Salamo, Baolai Liang, Diana L. Huffaker
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-9 (2017)
Abstract Photoluminescence (PL) is investigated as a function of the excitation intensity and temperature for lattice-matched InGaAs/InAlAs quantum well (QW) structures with well thicknesses of 7 and 15 nm, respectively. At low temperature, interface
Externí odkaz:
https://doaj.org/article/2638e969615d431a9aaabb11817d6a87
Autor:
Y. J. Ma, Y. G. Zhang, Y. Gu, S. P. Xi, X. Y. Chen, Baolai Liang, Bor-Chau Juang, Diana L. Huffaker, B. Du, X. M. Shao, J. X. Fang
Publikováno v:
AIP Advances, Vol 7, Iss 7, Pp 075117-075117-10 (2017)
We report structural properties as well as electrical and optical behaviors of beryllium (Be)-doped InGaAsP lattice-matched to InP grown by gas source molecular beam epitaxy. P type layers present a high degree of compensation on the order of 1018 cm
Externí odkaz:
https://doaj.org/article/3100c2e524f543ff9e2a220c93942c86
Autor:
Bor-Chau Juang, Baolai Liang, Dingkun Ren, David L. Prout, Arion F. Chatziioannou, Diana L. Huffaker
Publikováno v:
Crystals, Vol 7, Iss 10, p 313 (2017)
III-(As, Sb) alloys are building blocks for various advanced optoelectronic devices, but the growth of their ternary or quaternary materials are commonly limited by spontaneous formation of clusters and phase separations during alloying. Recently, di
Externí odkaz:
https://doaj.org/article/1f4ae416b9d549a7a056ae37884819ba
Autor:
Jasmine J. Mah, Khalifa M. Azizur-Rahman, Baolai Liang, Diana L. Huffaker, Jeung Hun Park, Stewart Miller, Richard S. Kim, Russell Dahl
Publikováno v:
Oxide-based Materials and Devices XIV.
Autor:
Xiao Jin, Baolai Liang, Shiyu Xie, Jamal Ahmed, John P. R. David, Diana L. Huffaker, Manoj Kesaria, Xin Yi
Publikováno v:
IEEE Journal of Quantum Electronics. 57:1-6
Single photon avalanche diodes (SPADs) are key enabling technologies for a wide range of applications in the near-infrared wavelength range. Recently, AlAs0.56 Sb0.44 (hereafter AlAsSb) lattice-matched to InP has been demonstrated for extremely low e
Autor:
Arion F. Chatziioannou, Y. Ji, Diana L. Huffaker, Bor-Chau Juang, Khalifa M. Azizur-Rahman, David L. Prout, B. Liang, T. Chang
Publikováno v:
Electronics Letters. 56:1420-1423
The suppression of leakage current via surface passivation plays a critical role for GaSb‐based optoelectronic devices. In this Letter the authors carefully optimise the sulfur passivation parameters for improving the performance of GaSb p–i–n
Autor:
S. Hurand, F. Paumier, Bertrand Lacroix, Victor J. Gómez, Antonio J. Santos, Rafael García, Francisco M. Morales, Thierry Girardeau, Diana L. Huffaker, Eduardo Blanco
Publikováno v:
Journal of Physical Chemistry C
Journal of Physical Chemistry C, American Chemical Society, 2019, 124 (2), pp.1535-1543. ⟨10.1021/acs.jpcc.9b10556⟩
Journal of Physical Chemistry C, 2019, 124 (2), pp.1535-1543. ⟨10.1021/acs.jpcc.9b10556⟩
Journal of Physical Chemistry C, American Chemical Society, 2019, 124 (2), pp.1535-1543. ⟨10.1021/acs.jpcc.9b10556⟩
Journal of Physical Chemistry C, 2019, 124 (2), pp.1535-1543. ⟨10.1021/acs.jpcc.9b10556⟩
International audience; We report an original and straightforward method for both optical and electrical characterization of vertical GaN nanowire arrays epitaxially grown on silicon through visible-infrared spectroscopic ellipsometry methods. For th