Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Diana Convey"'
Publikováno v:
Materials Characterization. 98:168-179
The pore- and micro-structural features of a novel binding material based on the carbonation of waste metallic iron powder are reported in this paper. The binder contains metallic iron powder as the major ingredient, followed by additives containing
Autor:
Neha Singh, Steven M. Smith, T. E. Tiwald, James N. Hilfiker, Diana Convey, Jeffrey H. Baker, Harland G. Tompkins
Publikováno v:
Thin Solid Films. 516:7979-7989
Spectroscopic Ellipsometry (SE) is routinely used to measure thickness and optical constants of dielectric and semiconductor films. However, unique results for thin absorbing films, such as metals, are difficult to ensure. SE enables simultaneous det
Publikováno v:
Thin Solid Films. 516:885-890
In this work we present an ultra-low temperature method for the oxidation of an amorphous silicon–carbide–nitride (SiCN) material. The SiCN is deposited on silicon substrates by plasma enhanced chemical vapor deposition using CH 4 , SiH 4 , and N
Autor:
Ngoc V. Le, William J. Dauksher, Pawitter J. S. Mangat, Jeffrey H. Baker, K. Gehoski, Kevin J. Nordquist, Diana Convey, S. R. Young, Eric S. Ainley
Publikováno v:
Microelectronic Engineering. 83:929-932
Nano-imprint lithography is attracting attention as a low cost method for printing nanometer-scale geometries and has obtained placement on the International Technology Roadmap for Semiconductors as a potential lithography solution at the 32 and 22nm
Autor:
M. L. Kottke, D. Collins, Steven M. Smith, Harland G. Tompkins, Richard B. Gregory, Diana Convey
Publikováno v:
Surface and Interface Analysis. 35:136-140
In this work we propose a method of determining the amount of excess Si in chemical vapor deposited (CVD) oxynitrides that is due to silicon bonded to other silicon (the amount of excess Si due to more-than-normal Si–H bonds can be determined by Fo
Publikováno v:
Surface and Interface Analysis. 29:227-231
In this study, we show that the optical constants of sputter-deposited chromium depend on the argon pressure used for the deposition. Higher argon pressure gives lower extinction coefficients. Sheet resistance measurements show that those materials w
Publikováno v:
Surface and Interface Analysis. 29:179-187
Optical methods are used to determine the thickness of thin metal films, with emphasis on spectroscopic ellipsometry and transmission. We discuss the conditions where this is possible and how to determine the optical constants for the material. The d
Publikováno v:
Surface and Interface Analysis. 29:845-850
In this work we show how to choose optimum analysis conditions to analyze a transparent film on a transparent substrate where the index of refraction for the film is not very different from that of the substrate. We show that there are three ‘zones
Autor:
Richard R. King, Diana Convey, Aymeric Maros, Fernando Ponce, Hongen Xie, Nikolai Faleev, Christiana B. Honsberg
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 34:02L113
GaInAs/GaAs and GaAsSb/GaAs heterostructures were grown by molecular beam epitaxy with different In/Sb compositions and thicknesses in order to obtain samples with different amounts of initial strain. High resolution x-ray diffraction was used to ext
Publikováno v:
SPIE Proceedings.
In this paper we describe a method of fabricating a Fabry-Perot filter array consisting of four distinct wavelengths using a stopping layer, which in turn is discriminately measured. Precise control of the oxide thickness is demonstrated by using ref