Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Dian Sugiarto"'
Autor:
Dian Sugiarto, Suhadi Suhadi
Publikováno v:
CICES. 5:136-142
The development of information technology is very advanced. Information Plays an important role, with information makes it easir for people to find information they want, information can be obtained through print and electronic media, especially prin
Publikováno v:
ICIT Journal. 5:50-57
Perpustakaan merupakan gudang ilmu pengetahuan sekaligus menjadi tempat rekreasi yang bermanfaat bagi semua kalangan. Di dalam perpustakaan terdapat banyak koleksi buku yang dapat digunakan untuk menambah wawasan dan ilmu pengetahuan. Seperti hal nya
Autor:
Dian Sugiarto, Elizabeth Resurrecion, Robert Marion, Rod McInnis, David Slobodin, Wei Chen, Neil G. Bergstrom, Bryan Loucks, Xing Chen, Frederic J. Kahn, Matthew Bone
Publikováno v:
The Journal of the Institute of Television Engineers of Japan. 47:595-599
Publikováno v:
2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443).
After several delays in the implementation of /spl kappa/
Autor:
Carol Y. Lee, Ling Liao, Michael P. Nault, David Mui, Tony Tryba, Dian Sugiarto, Timothy W. Weidman
Publikováno v:
SPIE Proceedings.
Plasma polymerized organosilane resist films have been shown to exhibit high sensitivity to DUV radiation 15 We havepreviously demonstrated a 193nm CVD photoresist process in which plasma polymerized methylsilane (PPMS) is patternedvia photo-oxidatio
Autor:
Timothy W. Weidman, Carol Y. Lee, Siddhartha Das, Zoe A. Osborne, Dian Sugiarto, John W. Yang, Michael P. Nault, David Mui
Publikováno v:
SPIE Proceedings.
Thin layer imaging can extend the optical lithography limit down to sub-0.18 micrometers CD with 193 nm wavelength tools. Thin layer imaging can be implemented in a bi-layer approach, in which a patterned thin layer is transferred into an underlying
Autor:
Timothy W. Weidman, F. Cormont, Carol Y. Lee, Gilles R. Amblard, Olivier Joubert, John W. Yang, R. L. Inglebert, Dian Sugiarto, Cedric Monget
Publikováno v:
SPIE Proceedings.
Plasma polymerized methylsilane resist films (PPMS) have high sensitivity to short wavelength radiation. The photoinduced oxidation of PPMS films exposed in air forms siloxane network material (called PPMSO), allowing dry development by selective etc
Autor:
Dian Sugiarto, Cary Y. Yang, F. E. Pagaduan, T. Harjono, H. Inokawa, Mahmud Rahman, K. H. Lui
Publikováno v:
MRS Proceedings. 192
The performance and reliability of silicon-based hetero-structure devices depend critically on their interfacial characteristics. Here we present high-resolution TEM (HRTEM) results for the a-SiC:H/c-Si (100) interface, substrate doping, and interfac
Conference
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Conference
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