Zobrazeno 1 - 10
of 255
pro vyhledávání: '"Dian Lei"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 596-600 (2019)
We propose and demonstrate Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) on a high thermal conductivity AlN/Si substrate to improve the heat dissipation capability and keep their cost-effectiveness. Owing to the optimized source/
Externí odkaz:
https://doaj.org/article/1d30d332c36043f7abee8dfb34e7b7ad
Publikováno v:
Drug Delivery, Vol 26, Iss 1, Pp 1058-1067 (2019)
Realgar and (-)-Epigallocatechin-3-gallate (EGCG) are natural medicines that inhibit cancer cell growth, resulting in inhibition of formation and development of tumors. The anticancer effects of realgar and EGCG were greatly improved following formul
Externí odkaz:
https://doaj.org/article/b970a1ff94c04f9cb5be3b1df0e68d65
Publikováno v:
Remote Sensing, Vol 14, Iss 5, p 1198 (2022)
High-quality feature matching is a critical prerequisite in a wide range of applications. Most contemporary methods concentrate on detecting keypoints or line features for matching, which have achieved adequate results. However, in some low-texture e
Externí odkaz:
https://doaj.org/article/82ce5912a5da4c329e289dae48f14c61
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
Abstract We developed a new digital etch process that allows precise etching of Germanium or Germanium-tin (Ge1−x Sn x ) materials. The digital etch approach consists of Ge1−x Sn x oxide formation by plasma oxidation and oxide removal in diluted
Externí odkaz:
https://doaj.org/article/c890dc39b6ee446f9ae6b0f5ddd28403
Autor:
Yuye Kang, Yi-Chiau Huang, Kwang Hong Lee, Shuyu Bao, Wei Wang, Dian Lei, Saeid Masudy-Panah, Yuan Dong, Ying Wu, Shengqiang Xu, Chuan Seng Tan, Xiao Gong, Yee-Chia Yeo
Publikováno v:
AIP Advances, Vol 8, Iss 2, Pp 025111-025111-7 (2018)
Strain relaxation of biaxially strained Ge1-xSnx layer when it is patterned into Ge1-xSnx fin structures is studied. Ge1-xSnx-on-insulator (GeSnOI) substrate was realized using a direct wafer bonding (DWB) technique and Ge1-xSnx fin structures were f
Externí odkaz:
https://doaj.org/article/9906f351723540bd99cb26b277df3333
Autor:
Chen, Jian-Yu, Feng, Dian-Lei, Peng, Chong, Ni, Rui-Chen, Wu, Yu-Xin, Li, Tao, Song, Xian-Zhao
Publikováno v:
In Applied Mathematical Modelling October 2024 134:288-306
Publikováno v:
In Engineering Analysis with Boundary Elements June 2023 151:265-274
Autor:
Zhu, Wen-Tao, Li, Chen-Hui, Dai, Ting-Ting, Tao, Fu-Lin, Wang, Meng-Wen, Wang, Chong-Yang, Han, Zhi-Li, Sun, Nian-Xia, Zhao, Ya-Nan, Wang, Dian-Lei
Publikováno v:
In International Immunopharmacology December 2021 101 Part B
Autor:
Chen, Jian-Yu, Feng, Dian-Lei, Lien, Fue-Sang, Yee, Eugene, Deng, Shu-Xin, Gao, Fei, Peng, Chong
Publikováno v:
In Applied Mathematical Modelling November 2021 99:760-784
Publikováno v:
In Journal of Fluids and Structures November 2020 99