Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Di-Hong Lee"'
Autor:
Di-Hong Lee, 李迪弘
87
A high efficiency and high output power for low voltage operation dual delta doped AlGaAs/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistor ( PHEMT ) has been developed in this research. The device is ideal for the hand-held phone a
A high efficiency and high output power for low voltage operation dual delta doped AlGaAs/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistor ( PHEMT ) has been developed in this research. The device is ideal for the hand-held phone a
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/34786101350205190946
Autor:
K.Y. Hsu, Hongyu Yu, T.T. Le, K.S. Yew, L. Wu, T.L. Duan, Di-Hong Lee, Jeff J. Xu, X.F. Yu, Wen-Jun Liu, Hun-Jan Tao, C.H. Hou, M. Cao, Diing Shenp Ang
Publikováno v:
2010 International Electron Devices Meeting.
ALD HfZrO high-K fabricated by novel multi deposition multi annealing (MDMA) technique at room temperature in Ultraviolet-Ozone (UVO) ambient is systematically investigated for the first time via both physical and electrical characterization. As comp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5f90ee81f1f96d0058d7179c95d0d68
https://doi.org/10.1109/iedm.2010.5703343
https://doi.org/10.1109/iedm.2010.5703343
Autor:
Fu-Jye Liang, Kuang-Hsin Chen, Carlos H. Diaz, Chun-Kuang Chen, Jaw-Jung Shin, Chii-Ming Wu, Lin-Hung Shiu, Chenming Hu, Li-Wei Kung, Ping-Wei Wang, Chang-Yun Chang, Cheng-Chuan Huang, Chiu-Lien Lee, Bor-Wen Chan, King-Chang Shu, Tsai-Sheng Gau, Samuel Fung, Chang-Ta Yang, J.Y.-C. Sun, Cheng-Kuo Wen, Hou-Yu Chen, Peng-Fu Hsu, M.S. Liang, Burn-Jeng Lin, Jyu-Honig Shieh, Yee-Chaung See, Jan-Wen You, Fu-Liang Yang, Chien-Chao Huang, Hung-Wei Chen, Di-Hong Lee, Tang-Xuan Chung, Shui-Ming Cheng, Sheng-Da Liu, Bin-Chang Chang, Yu-Jun Chou
Publikováno v:
Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..
The first 45nm node planar-SOI technology has been developed with 6T-SRAM cell of 0.296 /spl mu/m/sup 2/. An adequate static noise margin of 120mV is obtained even at 0.6V operation. Fine patterning with line pitch of 130nm and contact pitch of 140nm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c63f77d8d1817a120f09384733d85752
https://doi.org/10.1109/vlsit.2004.1345362
https://doi.org/10.1109/vlsit.2004.1345362
Autor:
Chien-Chao Huang, Jyu-Horng Shieh, Jam-Wem Lee, Hou-Yu Chen, Hung-Wei Chen, Chang-Yun Chang, Chi-Chun Chen, Chenming Hu, Tang-Xuan Chung, Shih-Chang Chen, Yee-Chia Yeo, Di-Hong Lee, Cheng-Chuan Huang, Fu-Liang Yang, C.H. Chen, Yiming Li, Pu Chen, Mong-Song Liang, Han-Jan Tao, Peng-Fu Hsu, C.C. Wu, Ying-Tsung Chen, Yi-Hsuan Liu, Bor-Wen Chan, Ying-Ho Chen, Sheng-Da Liu
Publikováno v:
Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..
A new nanowire FinFET structure is developed for CMOS device scaling into the sub-10 nm regime. Accumulation mode P-FET and inversion mode N-FET with 5 nm and 10 nm physical gate length, respectively, are fabricated. N-FET gate delay (CV/I) of 0.22 p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fb47840b46cc559f0c572d8e1e9a16f
https://doi.org/10.1109/vlsit.2004.1345476
https://doi.org/10.1109/vlsit.2004.1345476
Autor:
Tang-Xuan Chung, Yi-Ming Sheu, Ke-Wei Su, Cheng-Chuan Huang, Di-Hong Lee, Hung-Wei Chen, Fu-Liang Yang, Sheng-Jier Yang, Chang-Yun Chang, Chung-Shi Chiang, Chien-Chao Huang, Kuang-Hsin Chen, Yu-Tai Chia, Cheng-Kuo Wen, Hou-Yu Chen
Publikováno v:
2003 IEEE International Conference on Robotics and Automation (Cat No 03CH37422) SOI-03).
In this paper, the mechanical stress effect of SOI MOS devices was analysed. The width dependence of stress effect and drain current shift were evaluated.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9a2a55468c2d77cfcbf30ec3071e598
https://doi.org/10.1109/soi.2003.1242907
https://doi.org/10.1109/soi.2003.1242907
Publikováno v:
2000 Asia-Pacific Microwave Conference. Proceedings (Cat. No.00TH8522).
A high efficiency and high linearity 1.2 V operational AlGaAs-InGaAs-GaAs pseudomorphic high electron mobility transistor (PHEMT) for digital wireless personal handy phone (PHS) handset application has been developed. The device exhibits maximum powe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f993df1606d4132ca97680a098840afb
https://doi.org/10.1109/apmc.2000.925757
https://doi.org/10.1109/apmc.2000.925757
Publikováno v:
2000 Asia-Pacific Microwave Conference. Proceedings (Cat. No.00TH8522); 2000, p185-188, 4p
Autor:
Ke-Wei Su, Kuang-Hsin Chen, Tang-Xuan Chung, Hung-Wei Chen, Cheng-Chuan Huang, Hou-Yu Chen, Chang-Yun Chang, Di-Hong Lee, Cheng-Kuo Wen, Yi-Ming Sheu, Sheng-Jier Yang, Chung-Shi Chiang, Chien-Chao Huang, Fu-Liang Yang, Yu-Tai Chia
Publikováno v:
IEEE International SOI Conference, 2003; 2003, p80-82, 3p
Autor:
Jaw-Jung Shin, Fu-Jye Liang, Ming Lu, Li-Wei Kung, Fu-Liang Yang, Chien-Chao Huang, Hsun-Chih Tsao, Cheng-Kuo Wen, Jhon-Jhy Liaw, Ke-Wei Su, Yu-Jun Chou, Yi-Chun Huang, Yung-Shun Chen, Di-Hong Lee, Tze-Liang Lee, Shui-Ming Cheng, Samuel Fung, Chenming Hu, Bin-Chang Chang, Tang-Xuan Chung, Chuan-Ping Hou, Chang-Yun Chang, Tsai-Sheng Gau, Kuang-Hsin Chen, J.Y.-C. Sun, Cheng Chuan Huang, Hou-Yu Chen, Jan-Wen You, Liang Min-Chang, Jhi-cheng Lu, Chi-Chun Chen, Burn-Jeng Lin, Kuei-Shun Chen, Yee-Chia Yeo, Han-Jan Tao, J.H. Chen, Shih-Chang Chen, Hung-Wei Chen, Carlos H. Diaz, Yi-Ming Sheu, Chun-Kuang Chen, Bor-Wen Chan, Ying-Ho Chen, W. Chang, King-Chang Shu, C.H. Chen, Chii-Ming Wu, Cheng-hung Chang
Publikováno v:
Scopus-Elsevier
A 65 nm node strained SOI technology with high performance is demonstrated, providing drive currents of 1015 and 500 /spl mu/A//spl mu/m for N-FET and P-FET, respectively, at an off-state leakage of 40 nA//spl mu/m using 1 V operation. The technology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d2cd43133598ebbb8ca11a12eccb16a1
http://www.scopus.com/inward/record.url?eid=2-s2.0-17644444298&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-17644444298&partnerID=MN8TOARS
Autor:
Fu-Liang Yang, Di-Hong Lee, Hou-Yu Chen, Chang-Yun Chang, Sheng-Da Liu, Cheng-Chuan Huang, Tang-Xuan Chung, Hung-Wei Chen, Chien-Chao Huang, Yi-Hsuan Liu, Chung-Cheng Wu, Chi-Chun Chen, Shih-Chang Chen, Ying-Tsung Chen, Ying-Ho Chen, Chih-Jian Chen, Bor-Wen Chan, Peng-Fu Hsu, Jyu-Horng Shieh, Han-Jan Tao
Publikováno v:
2004 Digest of Technical Papers. 2004 Symposium on VLSI Technology; 2004, p196-197, 2p