Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Di Lecce, Valerio"'
Autor:
Vaziri, Sam, Smith, Anderson D., Östling, Mikael, Lupina, Grzegorz, Dabrowski, Jarek, Lippert, Gunther, Driussi, Francesco, Venica, Stefano, Di Lecce, Valerio, Gnudi, Antonio, König, Matthias, Ruhl, Günther, Belete, Melkamu, Lemme, Max C.
Publikováno v:
Solid State Communications 224, 64-75, 2015
This paper reviews the experimental and theoretical state of the art in ballistic hot electron transistors that utilize two-dimensional base contacts made from graphene, i.e. graphene base transistors (GBTs). Early performance predictions that indica
Externí odkaz:
http://arxiv.org/abs/1509.01025
Autor:
Pugnaghi, Claudio, Grassi, Roberto, Gnudi, Antonio, Di Lecce, Valerio, Gnani, Elena, Reggiani, Susanna, Baccarani, Giorgio
Publikováno v:
J. Appl. Phys. 116, 114505 (2014)
We develop a semianalytical model for monolayer graphene field-effect transistors in the ballistic limit. Two types of devices are considered: in the first device, the source and drain regions are doped by charge transfer with Schottky contacts, whil
Externí odkaz:
http://arxiv.org/abs/1409.6436
Autor:
Grassi, Roberto, Gnudi, Antonio, Di Lecce, Valerio, Gnani, Elena, Reggiani, Susanna, Baccarani, Giorgio
Publikováno v:
Solid-State Electronics, vol. 100, pp. 54-60, 2014
We study a possible circuit solution to overcome the problem of low voltage gain of short-channel graphene FETs. The circuit consists of a fully differential amplifier with a load made of a cross-coupled transistor pair. Starting from the device char
Externí odkaz:
http://arxiv.org/abs/1401.4153
Autor:
Grassi, Roberto, Gnudi, Antonio, Di Lecce, Valerio, Gnani, Elena, Reggiani, Susanna, Baccarani, Giorgio
Publikováno v:
IEEE Transactions on Electron Devices, vol. 61, no. 2, pp. 617-624, 2014
Through self-consistent quantum transport simulations, we evaluate the RF performance of monolayer graphene FETs in the bias region of negative output differential resistance. We show that, compared to the region of quasi-saturation, a voltage gain l
Externí odkaz:
http://arxiv.org/abs/1309.1105
Autor:
Di Lecce, Valerio, Grassi, Roberto, Gnudi, Antonio, Gnani, Elena, Reggiani, Susanna, Baccarani, Giorgio
Publikováno v:
In Solid State Electronics December 2015 114:23-29
Akademický článek
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Akademický článek
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Autor:
Saguatti, Davide, Di Lecce, Valerio, Esposto, Michele, Chini, Alessandro, FAUSTO FANTINI, Giovanni Verzellesi, Boulay, S., Bouloukou, A., Boudjelida, B., Missous, M.
Publikováno v:
Università degli studi di Modena e Reggio Emilia-IRIS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::3222e64d61c58f4a2c7587cb87fce167
https://hdl.handle.net/11380/623856
https://hdl.handle.net/11380/623856