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of 7
pro vyhledávání: '"Dhrubajyoti Saikia"'
Autor:
P. Kavitha, Yatheesh.K.C., Akash Anand, Sruthi Sreenivasan, Hashim Mohammed S, Naiwrita Borah, Dhrubajyoti Saikia
Publikováno v:
Engineering Proceedings, Vol 62, Iss 1, p 18 (2024)
Although many innovations have been achieved and natural disasters are well known to be extremely detrimental to persons and property, there is still no 100% assurance that alerts and real-time monitoring will work. Vulnerable communities sometimes r
Externí odkaz:
https://doaj.org/article/ebc9ccf484ff422fa975010ec24634d8
Autor:
Dhrubajyoti Saikia, Ranjit Sarma
Publikováno v:
Bulletin of Materials Science. 43
In this paper, we report the characteristic properties of an organic light-emitting diode (OLED) using a rubrene buffer layer over the fluorine-doped tin oxide (FTO) surface. Our study includes both electrical and optical properties of the device. He
Autor:
Ranjit Sarma, Dhrubajyoti Saikia
Publikováno v:
Journal of Electronic Materials. 47:737-743
The performance of an organic light-emitting diode (OLED) with a vacuum-deposited perylene layer over a fluorine-doped tin oxide (FTO) surface is reported. To investigate the effect of the perylene layer on OLED performance, different thicknesses of
Autor:
Dhrubajyoti Saikia, Ranjit Sarma
Publikováno v:
Indian Journal of Physics. 92:307-313
The influence of thin layer of nickel oxide (NiO) over the fluorine-doped tin oxide (FTO) surface on the performance of Organic light-emitting diode (OLED) is reported. With an optimal thickness of NiO (10 nm), the luminance efficiency is found to be
Autor:
Ranjit Sarma, Dhrubajyoti Saikia
Publikováno v:
Pramana. 91
In this study, high performance of organic light emitting diodes (OLEDs) with a buffer layer of dicarbazole-biphenyl (CBP) film is demonstrated. With an optimal thickness of CBP (12 nm), the luminance efficiency of OLED is found to increase compared
Autor:
Ranjit Sarma, Dhrubajyoti Saikia
Publikováno v:
Bulletin of Materials Science. 41
In this study, high-performance of organic light-emitting diodes (OLEDs) with a buffer layer of $$\hbox {MoO}_{3}$$ is demonstrated. With an optimal thickness of $$\hbox {MoO}_{3}$$ (12 nm), the luminance efficiency is found to be increased compared
Publikováno v:
Indian Journal of Physics. 84:547-552
A study of Pentacene OTFTs using La2O3 as gate insulator is presented. The device characteristics were studied and analyzed. The OTFTs exhibit p-type conductivity with field effect mobility 6.5 × 10−8 m2/V.s, ON/OFF ratio 1.4 × 102, sub-threshold