Interfacial control of vortex-limited critical current in type-II superconductor films

Autor: Jagadeesh S. Moodera, Akashdeep Kamra, Dhavala Suri, Morten Amundsen, Marius K. Hope

Publikováno v: Physical Review B. 104

In a small subset of type II superconductor films, the critical current is determined by a weakened Bean-Livingston barrier posed by the film surfaces to vortex penetration into the sample. A film property thus depends sensitively on the surface or i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::37b636f303ee3015cfb6ace5a4b4933c
https://doi.org/10.1103/physrevb.104.184512

In-depth Analysis of Anisotropic Magnetoconductance in Bi$_2$Se$_3$ thin films with electron-electron interaction corrections

Autor: Satyaki Sasmal, Dhavala Suri, Karthik V. Raman, Joynarayan Mukherjee

A combination of out-of-plane and in-plane magnetoconductance (MC) study in topological insulators (TI) is often used as an experimental technique to probe weak anti-localization (WAL) response of the topological surface states (TSSs). However, in ad

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::66c237a3c5b36655ec37d17b42a979d4
http://arxiv.org/abs/2106.07698

Observation of Planar Hall Effect in Topological Insulator -- Bi$_2$Te$_3$

Autor: Archit Bhardwaj, Dhavala Suri, P Syam Prasad, Karthik V. Raman

Planar Hall effect (PHE) in topological insulators (TIs) is discussed as an effect that stems mostly from conduction due to topologically protected surface states. Although surface states play a critical role and are of utmost importance in TIs, our

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::907cb6d23db888c96be41b9b5cad4707
http://arxiv.org/abs/2104.05246

Large Enhancement of Critical Current in Superconducting Devices by Gate Voltage

Autor: Mirko Rocci, Norbert M. Nemes, Gilvânia Vilela, Dhavala Suri, Mar Garcia Hernandez, Yota Takamura, José Luis Martínez, Akashdeep Kamra, Jagadeesh S. Moodera

Publikováno v: Nano Letters
Nano letters
21 (2021): 216–221. doi:10.1021/acs.nanolett.0c03547
info:cnr-pdr/source/autori:Rocci M.; Suri D.; Kamra A.; Gilvania Vilela; Takamura Y.; Nemes N.M.; Martinez J.L.; Hernandez M.G.; Moodera J.S./titolo:Large Enhancement of Critical Current in Superconducting Devices by Gate Voltage/doi:10.1021%2Facs.nanolett.0c03547/rivista:Nano letters (Print)/anno:2021/pagina_da:216/pagina_a:221/intervallo_pagine:216–221/volume:21

The gate-voltage-induced suppression of critical currents in metallic superconductors observed recently [De Simoni et al., Nat. Nanotechnol. 13, 802 (2018)] has raised crucial questions regarding the nature and mechanism of the electric field effect

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A study of electron and thermal transport in layered Titanium disulphide single crystals

Autor: Pratap K. Sahoo, Shikha Varma, Vantari Siva, Kartik Senapati, Shalikram Joshi, R. S. Patel, Dhavala Suri

We present a detailed study of thermal and electrical transport behavior of single crystal Titanium disulphide flakes, which belongs to the two dimensional, transition metal dichalcogenide class of materials. In-plane Seebeck effect measurements reve

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9940688217a0b0d92090c34ba3563d94