Zobrazeno 1 - 10
of 372
pro vyhledávání: '"Dhara, Sandip"'
Autor:
Bhuyan, C. Abinash, Madapu, Kishore K., Prabakar, K., Ganesan, K., Pandian, A., Dhara, Sandip
We fabricated the 1D nanoscrolled monolayer MoS2 (1L-MoS2) with superior characteristics from 1L-MoS2 film in a facile route, using a suitable organic solvent with optimum surface tension, evaporation rate and dielectric constant, which facilitates t
Externí odkaz:
http://arxiv.org/abs/2402.13564
Autor:
Sahoo, Madhusmita, Ghosh, Kalyan, Sahoo, Swayamprakash, Sahoo, Pratap K., Mathews, Tom, Dhara, Sandip
10 H SiC thin films are potential candidates for devices that can be used in high temperature and high radiation environment. Measurement of thermal conductivity of thin films by a non-invasive method is very useful for such device fabrication. Micro
Externí odkaz:
http://arxiv.org/abs/2308.05437
Autor:
Sahoo, Madhusmita, Ghosh, Kalyan, Sahoo, Swayamprakash, Sahoo, Pratap K., Mathews, Tom, Dhara, Sandip
Publikováno v:
In Thin Solid Films 30 October 2024 807
Publikováno v:
In Materials Science & Engineering B January 2025 311
Autor:
Ramaiah, M. Raghu, Athira, R.G., Madapu, Kishore K., Prabakar, K., Tripurasundari, S., Dhara, Sandip K.
Publikováno v:
In Sensors and Actuators: A. Physical 1 December 2024 379
Publikováno v:
In Materials Research Bulletin December 2024 180
VO2 is well known for its dual phase transitions; electrical as well as structural, at a single temperature of 340K. The low temperature structural phases of VO2 are different from its high temperature counterpart by means of structural symmetry. The
Externí odkaz:
http://arxiv.org/abs/2109.07089
Autor:
Parida, Santanu, Sahoo, Madhusmita, N, Abharana, Tromer, Raphael M., Galvao, Douglas S., Dhara, Sandip
A thorough investigation of local structure, influencing macroscopic properties of the solid is of potential interest. We investigated the local structure of GaN nanowires (NWs) with different native defect concentration synthesized by the chemical v
Externí odkaz:
http://arxiv.org/abs/2101.08121
The defect-free transfer of chemical vapour deposition (CVD) grown monolayer MoS2 is important for both fabrication of 2D devices and fundamental point of view for various studies where substrate effects need to be minimized. Among many transfer tech
Externí odkaz:
http://arxiv.org/abs/2101.06996