Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Dhanorm Plumwongrot"'
Autor:
Dhanorm Plumwongrot, Koji Miura, Hideki Yagi, Shigehisa Arai, Y. Nishimoto, Takeo Maruyama, Anisul Haque
Publikováno v:
Jpn. J. Appl. Phys.. 47(No. 5):3735-3741
The polarization properties of GaInAsP/InP single-quantum-well (SQW) quantum-wire (Q-Wire) structures fabricated by electron beam lithography, CH4/H2 reactive ion etching, and organometallic vapor-phase epitaxial regrowth have been investigated. Spon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e3677af476bfb40547347c3e5badbd45
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100598441
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100598441
Autor:
Takeo Maruyama, Koji Miura, Dhanorm Plumwongrot, Takuya Sano, K. Ohira, Shigehisa Arai, Hideki Yagi
Publikováno v:
IEICE Electronics Express. 1(17):540-544
GaInAsP/InP strain-compensated multiple-quantum-wire lasers (wire widths of 19nm and 27nm in a period of 100nm) with SiO2/semiconductor reflectors were realized by electron-beam lithography, CH4/H2 reactive ion etching and two-step organometallic vap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7bcd5af431d95bd2b2994a003d71bddb
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100539908
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100539908
Autor:
Shigeo Tamura, Takeo Maruyama, Takuya Sano, K. Ohira, Dhanorm Plumwongrot, Hideki Yagi, Anisul Haque, Shigehisa Arai
Publikováno v:
Jpn. J. Appl. Phys.. 43(6A):3401-3409
This paper reports the structural properties and lasing characteristics of GaInAsP/InP multiple-quantum-wire lasers fabricated by electron beam lithography, CH4/H2-reactive ion etching and organometallic vapor-phase-epitaxial regrowth. Good size dist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a1ec2bb3f7608bc60ac278d5fc61cc47
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100505903
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100505903
Autor:
Koji Miura, K. Ohira, Takeo Maruyama, Hideki Yagi, Dhanorm Plumwongrot, Shigehisa Arai, Y. Nishimoto
Publikováno v:
Japanese Journal of Applied Physics. 46:L411-L413
1590 nm GaInAsP/InP quantum-wire distributed feedback lasers incorporating Bragg wavelength detuning from the gain peak wavelength of active regions were fabricated by electron beam lithography, CH4/H2 reactive ion etching, and organometallic vapor-p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32400da554a4f1d4627a311dbcab01d2
https://doi.org/10.1143/jjap.46.l411
https://doi.org/10.1143/jjap.46.l411
Autor:
Koji Miura, Y. Nishimoto, Hideki Yagi, Takeo Maruyama, Dhanorm Plumwongrot, Shigehisa Arai, K. Ohira
Publikováno v:
Japanese Journal of Applied Physics. 46:L34-L36
We demonstrate 1540-nm-wavelength GaInAsP/InP distributed feedback lasers, consisting of multiple-quantum-wire active regions with a wire width of 30 nm, fabricated by electron-beam lithography, CH4/H2 reactive ion etching, and two-step organometalli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5020861206b82f200ab97d07e3fa9c2
https://doi.org/10.1143/jjap.46.l34
https://doi.org/10.1143/jjap.46.l34
Autor:
K. Ozawa, Shigehisa Arai, M. Kurokawa, Dhanorm Plumwongrot, Takeo Maruyama, Nobuhiko Nishiyama
Publikováno v:
2008 20th International Conference on Indium Phosphide and Related Materials.
The origin and model of the time dependence of RIE-plasma induced optical property degradation of GaInAsP/InP quantum-well structures were investigated. Non-radiative recombination was enhanced by irradiating CH4/H2-plasma, and was found to be recove
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::596bf69b7a7d54af5ae26af2533de023
https://doi.org/10.1109/iciprm.2008.4702963
https://doi.org/10.1109/iciprm.2008.4702963
Autor:
Tadashi Okumura, Takeo Maruyama, Y. Tamura, Y. Nishimoto, Nobuhiko Nishiyama, M. Kurokawa, Dhanorm Plumwongrot, Shigehisa Arai
Publikováno v:
Quantum Dots, Particles, and Nanoclusters V.
Wire-length dependences of In-place polarization anisotropy in GaInAsP/InP quantum-wire (Q-wire) structures fabricated by dry-etching and regrowth processes were investigated using a photo luminescence (PL) measurement. The reduction of polarization
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1303827b716efaab94a526e2b19e63a7
https://doi.org/10.1117/12.762201
https://doi.org/10.1117/12.762201
Autor:
M. Kurokawa, Dhanorm Plumwongrot, Takeo Maruyama, Tadashi Okumura, Nobuhiko Nishiyama, Y. Nishimoto, Shigehisa Arai
Publikováno v:
SPIE Proceedings.
In order to realize low damage fine structuring processes for the low-dimensional quantum structures, we investigated a process for reducing the degradations of optical properties, which was induced during a reactive-ion-etching (RIE) process with CH
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72199e1716ff2e1ebbaf51d15f386dac
https://doi.org/10.1117/12.764538
https://doi.org/10.1117/12.764538
Publikováno v:
2007 Digest of papers Microprocesses and Nanotechnology.
Fabrication processes of GalnAsP/InP arbitrary shaped low dimensional quantum structures using electron beam (EB) lithography, Ti-mask lift-off and reactive ion etching (RIE)-dry etching is reported. Scanning electron microscopy is used to characteri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::33f281850fc807e4a4019f6fcb92996d
https://doi.org/10.1109/imnc.2007.4456151
https://doi.org/10.1109/imnc.2007.4456151
Autor:
Shigehisa Arai, Takeo Maruyama, Dhanorm Plumwongrot, M. Kurokawa, Saeed Mahmud Ullah, Y. Nishimoto, Y. Tamura, Nobuhiko Nishiyama
Publikováno v:
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials.
By adopting Bragg wavelength detuning into DFB lasers with wirelike active regions, the changes of threshold current densities and differential quantum efficiencies as low as plusmn19% and 24%, respectively, were obtained between 10degC and 85degC.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::919f3e99dcfb4fcd3f5ceddfedd21dcd
https://doi.org/10.1109/iciprm.2007.381241
https://doi.org/10.1109/iciprm.2007.381241