Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Dhananjaya Tripathy"'
Publikováno v:
Facta universitatis - series: Electronics and Energetics. 35:1-11
This paper focuses on the impact of variation in the thickness of the oxide (SiO2) layer on the performance parameters of a FinFET analysed by varying the oxide layer thickness in the range of 0.8nm to 3nm. While varying the oxide layer thickness, th
Publikováno v:
2021 19th OITS International Conference on Information Technology (OCIT).
Publikováno v:
2021 19th OITS International Conference on Information Technology (OCIT).
Publikováno v:
2021 Devices for Integrated Circuit (DevIC).
In this paper, the performance of FinFET has been examined by changing the fin width which affects the device performance. The fin width has been changed by keeping the device width fixed and varying the width of the oxide layer by electrical charact
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9789811547744
This work presents a compact and low-power bandgap voltage-reference design using self-biased current mirror circuit. This design eliminates the standard complementary-to-absolute-temperature (CTAT) bipolar device in the voltage-reference branch, red
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60ff84da52016f3f033c279f17fff0df
https://doi.org/10.1007/978-981-15-4775-1_16
https://doi.org/10.1007/978-981-15-4775-1_16
Autor:
Debasish Nayak, Satish Kumar Das, Sudhansu Mohan Biswal, Dhananjaya Tripathy, Biswajit Baral, Umakanta Nanda, Sanjit Kumar Swain
Publikováno v:
2019 Devices for Integrated Circuit (DevIC).
In this work, we have analyzed the novelty of the Gate Stack Double Gate (DG) MOSFET with respect to different spacer variations in order to reduce the short channel effect challenges and simultaneously increasing the device performance. Silicon is u
Autor:
Biswajit Baral, Sarosij Adak, Sudhansu Mohan Biswal, Dhananjaya Tripathy, Debasish Navak, Sanjit Kumar Swain, Umakanta Nanda, Asmit Amlan Sahoo, Satish Kumar Das
Publikováno v:
2019 Devices for Integrated Circuit (DevIC).
This paper presents the performance of non-uniformed doped double gate (DG) MOSFET with different spacer variations with an aim to analysis the effects of short channel and various performance metrics. In this work we have taken silicon as the channe
Autor:
Sudhansu Mohan Biswal, Sanjit Kumar Swain, Dhananjaya Tripathy, Biswajit Baral, Debasish Nayak, Satish Kumar Das
Publikováno v:
2019 Devices for Integrated Circuit (DevIC).
With time the design of RF and Analog application based circuits in MOSFET industry is changing and day by day it's becoming more and more difficult as device modeling has now entered the deep-subnanometer regime. Performance of junction less transis
Autor:
Sudhansu Mohan Biswal, Dhananjaya Tripathy, Biswajit Baral, Sanjit Kumar Swain, Debasish Nayak, Satish Kumar Das
Publikováno v:
2019 Devices for Integrated Circuit (DevIC).
Here in this paper the design of a low power low noise amplifier (LNA) is presented which works for very wideband of frequency known as UWB signals. This method uses current reused technique which helps in reducing the power consumption while maintai
Autor:
Pritam Bhadra, Dhananjaya Tripathy
Publikováno v:
2018 3rd IEEE International Conference on Recent Trends in Electronics, Information & Communication Technology (RTEICT).
A differential amplifier is actually a electronic amplifier which amplifies the difference between two input voltages and suppresses any voltage common to the two inputs. Differential type amplifier is a analog circuit in which there is two input ter