Zobrazeno 1 - 10
of 157
pro vyhledávání: '"Dhanak VR"'
Autor:
Bromley, D, Wright, AJ, Jones, LAH, Swallow, JEN, Beesley, T, Batty, R, Weatherup, RS, Dhanak, VR, O'Brien, L
Publikováno v:
SCIENTIFIC REPORTS
We report on the electronic and magnetic properties of superconductor-ferromagnet heterostructures fabricated by electron beam evaporation on to unheated thermally oxidised Si substrates. Polycrystalline Nb thin films (5 to 50 nm thick) were shown to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8789e2f1130a31e724fa1ce37ca1c27c
https://doi.org/10.1038/s41598-022-11828-y
https://doi.org/10.1038/s41598-022-11828-y
Autor:
Roberts, JW, Chalker, PR, Ding, B, Oliver, RA, Gibbon, JT, Jones, LAH, Dhanak, VR, Phillips, LJ, Major, JD, Massabuau, FCP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______109::1c658174d0e1e32ea0e16f7886fd6daa
https://www.repository.cam.ac.uk/handle/1810/297309
https://www.repository.cam.ac.uk/handle/1810/297309
Autor:
Zhang, JY, Li, WW, Hoye, RLZ, MacManus-Driscoll, JL, Budde, M, Bierwagen, O, Wang, L, Du, Y, Wahila, MJ, Piper, LFJ, Lee, T-L, Edwards, HJ, Dhanak, VR, Zhang, KHL
Publikováno v:
JOURNAL OF MATERIALS CHEMISTRY C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::e1ae5b18eff7dfced9e43b89bdb18603
Autor:
Supardan, SN, Das, P, Shaw, AP, Major, JD, Valizadeh, R, Hannah, A, Chakraborty, AK, Mahapatra, R, Dhanak, VR, Mitrovic, IZ
Publikováno v:
UK Nitrides Consortium (UKNC) Winter Conference
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::69f9d1cec17f896b6bf10886292c3670
Autor:
Sedghi, N, Li, H, Brunell, IF, Dawson, K, Guo, Y, Potter, RJ, Gibbon, JT, Dhanak, VR, Zhang, WD, Zhang, JF, Hall, S, Robertson, J, Chalker, PR
© 2017 Author(s). The effect of fluorine doping on the switching stability of Ta2O5 resistive random access memory devices is investigated. It shows that the dopant serves to increase the memory window and improve the stability of the resistive stat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______109::8a2a1d20102a804abaddcb639e5a0f85
https://www.repository.cam.ac.uk/handle/1810/274645
https://www.repository.cam.ac.uk/handle/1810/274645
Autor:
Birkett, M, Savory, CN, Fioretti, AN, Thompson, P, Muryn, CA, Weerakkody, AD, Mitrovic, IZ, Hall, S, Treharne, R, Dhanak, VR, Scanlon, DO, Zakutayev, A, Veal, TD
Publikováno v:
Birkett, M, Savory, C N, Fioretti, A N, Thompson, P, Muryn, C A, Weerakkody, A D, Mitrovic, I Z, Hall, S, Treharne, R, Dhanak, V R, Scanlon, D O, Zakutayev, A & Veal, T D 2017, ' Atypically small temperature-dependence of the direct band gap in the metastable semiconductor copper nitride Cu3 N ', Physical Review B-Condensed Matter and Materials Physics, vol. 95, no. 11, 115201 . https://doi.org/10.1103/PhysRevB.95.115201
Physical Review B-Condensed Matter and Materials Physics
Physical Review B-Condensed Matter and Materials Physics
The temperature-dependence of the direct band gap and thermal expansion in the metastable anti-ReO3 semiconductor Cu3N are investigated between 4.2 and 300 K by Fourier-transform infrared spectroscopy and x-ray diffraction. Complementary refractive i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::33b0d80c3a01b43816246c432cc3aa8e
https://research.manchester.ac.uk/en/publications/e766e68d-0e52-41a5-8e05-29355e29a3d7
https://research.manchester.ac.uk/en/publications/e766e68d-0e52-41a5-8e05-29355e29a3d7
Autor:
Sedghi, N, Li, H, Brunell, IF, Dawson, K, Potter, RJ, Guo, Y, Gibbon, JT, Dhanak, VR, Zhang, WD, Zhang, JF, Robertson, J, Hall, S, Chalker, PR
The role of nitrogen doping on the stability and memory window of resistive state switching in N-doped Ta2O5 deposited by atomic layer deposition is elucidated. Nitrogen incorporation increases the stability of resistive memory states which is attrib
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bbe5ea3c3842f4e4114ec2e9b70e792b
https://www.repository.cam.ac.uk/handle/1810/263219
https://www.repository.cam.ac.uk/handle/1810/263219
Autor:
Speckbacher, M, Treu, J, Whittles, TJ, Linhart, WM, Xu, X, Saller, K, Dhanak, VR, Abstreiter, G, Finley, JJ, Veal, TD, Koblmüller, G
Publikováno v:
Nano Letters: a journal dedicated to nanoscience and nanotechnology
Surface effects strongly dominate the intrinsic properties of semiconductor nanowires (NWs), an observation that is commonly attributed to the presence of surface states and their modification of the electronic band structure. Although the effects of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::ff5151b43973953671746a025f842134
http://livrepository.liverpool.ac.uk/3002871/1/Manuscript_PLXPS_InGaAsNW_author_version.pdf
http://livrepository.liverpool.ac.uk/3002871/1/Manuscript_PLXPS_InGaAsNW_author_version.pdf
Autor:
Mitrovic, IZ, Althobaiti, M, Weerakkody, AD, Sedghi, N, Hall, S, Dhanak, VR, Mather, S, Chalker, PR, Tsoutsou, D, Dimoulas, A, Henkel, C, Litta, E Dentoni, Hellstrom, P-E, Ostling, M
Publikováno v:
DIELECTRICS FOR NANOSYSTEMS 6: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::69329b61458de24a5835bdb26f3e3407
The electronic structure of potassium-doped La@ C82 has been studied with synchrotron-radiation photoelectron spectroscopy. Ultraviolet photoemission measurements indicate evolution of the valence-band states of La@ C82 with increasing potassium cont
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______363::fa85ce1121fc83e5fd97f0c6b1083ba2
https://hdl.handle.net/10453/749
https://hdl.handle.net/10453/749