Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Dhairya Singh Arya"'
Publikováno v:
IEEE Transactions on Electron Devices. 70:1338-1343
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e35915b94b1ca33332f56c2eccb3ca33
https://doi.org/10.1109/ted.2022.3232585
https://doi.org/10.1109/ted.2022.3232585
Autor:
Mujeeb Yousuf, Nadeem Tariq Beigh, Dhairya Singh Arya, Manu Garg, Dhiman Mallick, Pushpapraj Singh
Publikováno v:
IEEE Sensors Letters. 7:1-4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9ce1c16ec06c1a72220c1112f45ffbe
https://doi.org/10.1109/lsens.2023.3240424
https://doi.org/10.1109/lsens.2023.3240424
Publikováno v:
IEEE Sensors Letters. 6:1-4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b12f23740aed9a656d6b964b5560777f
https://doi.org/10.1109/lsens.2022.3185061
https://doi.org/10.1109/lsens.2022.3185061
Publikováno v:
IEEE Journal on Flexible Electronics. 1:134-140
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab54b320941315af7b571466e19dae53
https://doi.org/10.1109/jflex.2022.3170528
https://doi.org/10.1109/jflex.2022.3170528
Publikováno v:
2023 IEEE 36th International Conference on Micro Electro Mechanical Systems (MEMS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da5cc98c4c4a1cd4840d40afa8485790
https://doi.org/10.1109/mems49605.2023.10052349
https://doi.org/10.1109/mems49605.2023.10052349
Autor:
Sushil Kumar, Manu Garg, Shubham Saxena, Pushpapraj Singh, Nikhil Chourasiya, Dhairya Singh Arya
Publikováno v:
IEEE Electron Device Letters. 42:1456-1459
We demonstrate a prototype of 1 kB high speed and scalable Nanoelectromechanical Read-Only-Memory (NEMS-ROM). The ROM cell current in fused-state is ~100 mA, and the average fused-state resistance is ~67 K ${\Omega } $ (Logic ‘1’), whereas, in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ea1d9aac5fa66f730a18f06fca82a21
https://doi.org/10.1109/led.2021.3106592
https://doi.org/10.1109/led.2021.3106592
Publikováno v:
Microsystem Technologies. 27:2925-2934
In this work, Z-axis MEMS accelerometers are investigated with variation in spring topography. The serpentine spring structure demonstrated the optimum sensitivity of MEMS accelerometers due to a large number of beams that reduce the spring constant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8737100bcf101e044eeeaf91832d242
https://doi.org/10.1007/s00542-021-05217-0
https://doi.org/10.1007/s00542-021-05217-0
Publikováno v:
IEEE Transactions on Electron Devices. 68:1045-1049
We demonstrate the bistable microelectromechanical system (MEMS) sleep-transistor for CMOS integrated circuits (ICs). The sleep transistor has infinite sleep mode resistance and ~2.5- $\Omega $ resistance in active mode. The hold bias in active mode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf946c57bb98cd2c2b099f144e960bcd
https://doi.org/10.1109/ted.2021.3051106
https://doi.org/10.1109/ted.2021.3051106
Publikováno v:
Journal of Microelectromechanical Systems. 30:683-685
This letter proposes a bi-stable microelectromechanical impedance (MEM-Z) based non-volatile memory (NVM) element. The MEM-Z NVM cell has two stable impedance states. In context to bi-stable mechanical systems, the MEM-Z cell has a novel de-actuation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bb8b9f625f826cb5df49bfaa4923213
https://doi.org/10.1109/jmems.2021.3104039
https://doi.org/10.1109/jmems.2021.3104039
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad1255bc204b3b15b7f20b39fb9273aa
https://doi.org/10.1109/irps48227.2022.9764557
https://doi.org/10.1109/irps48227.2022.9764557