Zobrazeno 1 - 10
of 123
pro vyhledávání: '"Dey Bappaditya"'
In this review, automatic defect inspection algorithms that analyze Electron Microscope (EM) images of Semiconductor Manufacturing (SM) products are identified, categorized, and discussed. This is a topic of critical importance for the SM industry as
Externí odkaz:
http://arxiv.org/abs/2409.06833
In this research, we introduce a unified end-to-end Automated Defect Classification-Detection-Segmentation (ADCDS) framework for classifying, detecting, and segmenting multiple instances of semiconductor defects for advanced nodes. This framework con
Externí odkaz:
http://arxiv.org/abs/2409.04310
Deep learning-based semiconductor defect inspection has gained traction in recent years, offering a powerful and versatile approach that provides high accuracy, adaptability, and efficiency in detecting and classifying nano-scale defects. However, se
Externí odkaz:
http://arxiv.org/abs/2407.12724
Precision in identifying nanometer-scale device-killer defects is crucial in both semiconductor research and development as well as in production processes. The effectiveness of existing ML-based approaches in this context is largely limited by the s
Externí odkaz:
http://arxiv.org/abs/2407.10348
Autor:
Chen, Ying-Lin, Deforce, Jacob, De Ridder, Vic, Dey, Bappaditya, Blanco, Victor, Halder, Sandip, Leray, Philippe
Due to potential pitch reduction, the semiconductor industry is adopting High-NA EUVL technology. However, its low depth of focus presents challenges for High Volume Manufacturing. To address this, suppliers are exploring thinner photoresists and new
Externí odkaz:
http://arxiv.org/abs/2404.05862
As Moore's Law continues to increase the complexity of electronic systems, Electronic Design Automation (EDA) must advance to meet global demand. An important example of an EDA technology is SKILL, a scripting language used to customize and extend ED
Externí odkaz:
http://arxiv.org/abs/2312.01921
Autor:
Dey, Bappaditya, Ngo, Anh Tuan, Sacchi, Sara, Blanco, Victor, Leray, Philippe, Halder, Sandip
Moore Law states that transistor density will double every two years, which is sustained until today due to continuous multi-directional innovations, such as extreme ultraviolet lithography, novel patterning techniques etc., leading the semiconductor
Externí odkaz:
http://arxiv.org/abs/2312.09462
In semiconductor manufacturing, lithography has often been the manufacturing step defining the smallest possible pattern dimensions. In recent years, progress has been made towards high-NA (Numerical Aperture) EUVL (Extreme-Ultraviolet-Lithography) p
Externí odkaz:
http://arxiv.org/abs/2311.11439
Publikováno v:
2023 International Symposium ELMAR, Zadar, Croatia, 2023, pp. 49-53
As semiconductor patterning dimensions shrink, more advanced Scanning Electron Microscopy (SEM) image-based defect inspection techniques are needed. Recently, many Machine Learning (ML)-based approaches have been proposed for defect localization and
Externí odkaz:
http://arxiv.org/abs/2311.11145
The technological advance of High Numerical Aperture Extreme Ultraviolet Lithography (High NA EUVL) has opened the gates to extensive researches on thinner photoresists (below 30nm), necessary for the industrial implementation of High NA EUVL. Conseq
Externí odkaz:
http://arxiv.org/abs/2310.14815