Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Devin A. Mourey"'
Autor:
Yuanyuan V. Li, Dalong A. Zhao, John E. Anthony, Thomas N. Jackson, Devin A. Mourey, Marsha A. Loth
Publikováno v:
Organic Electronics. 14:2411-2417
We report hybrid organic/inorganic complementary circuits using ink-jet-printed fluorinated 5,11-bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) as the p-channel material and zinc oxide deposited by plasma enhanced atomic layer deposition (P
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::395fb468f988ec613fc6f0982b7054d8
https://doi.org/10.1016/j.orgel.2013.06.007
https://doi.org/10.1016/j.orgel.2013.06.007
Publikováno v:
MRS Bulletin. 38:299-305
Paper, broadly defined as thin, porous sheets, is currently being used to create novel devices for diagnostics, microfluidics, and electronics that ideally combine low cost and high performance. A “device,” in this context, can be defined as an o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfb7c12e5c7ea1f70e057748090d64d8
https://doi.org/10.1557/mrs.2013.58
https://doi.org/10.1557/mrs.2013.58
Autor:
Rick E. Presley, Eric S. Sundholm, Ram Ravichandran, Randy Hoffman, Douglas A. Keszler, Christopher C. Knutson, John Robertson, Devin Alexander Mourey, Ken Hoshino, John F. Wager
Publikováno v:
Journal of the Society for Information Display. 20:589-595
Amorphous oxide semiconductor thin-film transistors (TFTs) are moving towards commercialization for a variety of display applications. Invariably, display applications require a bottom-gate TFT configuration in which passivation of the top channel la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12e704f4faf644937549f8fee23a36d6
https://doi.org/10.1002/jsid.120
https://doi.org/10.1002/jsid.120
Publikováno v:
Organic Electronics II: More Materials and Applications
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2819894318940f4442f16da8b287d36
https://doi.org/10.1002/9783527640218.ch10
https://doi.org/10.1002/9783527640218.ch10
Publikováno v:
Journal of Sol-Gel Science and Technology. 54:269-275
A chemical solution was employed for deposition of gadolinium molybdate [β-Gd2(MoO4)3] thin films. Gadolinium acetylacetonate hydrate {[CH3COCH = C(O–)CH3]3Gd·xH2O}, molybdenum isopropoxide {Mo[OCH(CH3)2]5}, and acetylacetone were used in synthes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88169f7ca6dfaa8ce3ba12e2b2676455
https://doi.org/10.1007/s10971-010-2180-2
https://doi.org/10.1007/s10971-010-2180-2
Publikováno v:
IEEE Transactions on Electron Devices. 57:530-534
We report stable high-mobility ZnO thin-film transistors (TFTs) and fast circuits fabricated using a novel weak reactant plasma-enhanced atomic layer deposition (PEALD) process. This PEALD process is a highly scalable manufacturable process and is a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de45bd6319c045e060abf0a339a83c1b
https://doi.org/10.1109/ted.2009.2037178
https://doi.org/10.1109/ted.2009.2037178
Publikováno v:
Journal of Electronic Materials. 39:554-558
We report high-quality ZnO thin films deposited at low temperature (200°C) by pulsed plasma-enhanced chemical vapor deposition (pulsed PECVD). Process byproducts are purged by weak oxidants N2O or CO2 to minimize parasitic CVD deposition, resulting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a1159e2e48433c677a05f9668ea293e
https://doi.org/10.1007/s11664-009-0995-9
https://doi.org/10.1007/s11664-009-0995-9
Publikováno v:
Organic Electronics. 10:486-490
We report operational and environmental stability of solution-processed organic thin film transistors (OTFTs) using the small molecule organic semiconductor 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-pentacene). Typical drop-cast TIPS-pentac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b1a329e80fd22460327834bd9a50f2b
https://doi.org/10.1016/j.orgel.2009.02.007
https://doi.org/10.1016/j.orgel.2009.02.007
Autor:
John E. Anthony, Sankar Subramanian, Thomas N. Jackson, Marina Feric, David J. Gundlach, Devin A. Mourey, Balaji Purushothaman, Oana D. Jurchescu, Behrang H. Hamadani
Publikováno v:
ECS Transactions. 16:283-289
We report on a simple a method of inducing self-isolation of the thin film transistors via manipulation of the chemical interactions between the organic molecules and the surfaces where they are deposited. We use pentafluorobenzenethiol (PFBT) treatm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e60dd83549dbbdad00c26286b9400dd
https://doi.org/10.1149/1.2980564
https://doi.org/10.1149/1.2980564
Publikováno v:
Journal of Electronic Materials. 37:755-759
We report undoped ZnO films deposited at low temperature (200°C) using plasma-enhanced chemical vapor deposition (PECVD). ZnO thin-film transistors (TFTs) fabricated using ZnO and Al2O3 deposited in situ by PECVD with moderate gate leakage show a fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::769b05207787a26b69dd37fe564269f7
https://doi.org/10.1007/s11664-007-0362-7
https://doi.org/10.1007/s11664-007-0362-7