Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Devi, Dass"'
Autor:
Devi Dass
Publikováno v:
Results in Surfaces and Interfaces, Vol 3, Iss , Pp 100009- (2021)
Surface passivation is one of the best techniques to eliminate the adverse effects of the dangling bonds present in the simple nanostructures and modify their electronic property. In this work, the metallic-to-semiconducting transition of silicon nan
Externí odkaz:
https://doaj.org/article/8872b3c1970e4620bb3ce468cab360ad
Autor:
NorFarah Diana Aba, Jaafar Abdullah, Khalid Abed (M.), Nadia Adrus, Muhammad Haziq Noor Akashah, Nabila Akhyar, Yarub Al-Douri, Nur Hashimah Alias, Amil Aligayev, Amer Al-Nafiey, Bahia Othman Alsobhi, Wasan A.M. Al Taie, Vijay K. Arora, Ankit Awasthi, Mohd Asyadi Azam, Noor Fitrah Abu Bakar, PhD, Associate Professor, Alfarooq O. Basheer, Wan Jefrey Basirun, Divyanshu Bhartiya, Anup. P. Bhat, Arkaprava Bhattacharyya, Ruey Shan Chen, Yik Heng Chin, Kok-Keong Chong, Xiaoyang Cui, Chaomeng Dai, Devi Dass, Sanjay J. Dhoble, Mahreen Fatima, Sinyee Gan, Richa Gupta, Swadesh Kumar Gupta, Meenakshi Gusain, Samir M. Hamad, Mohd Ali Hashim, Adeeb Hayyan, Hanee F. Hizaddin, Kai Jeat Hong, Yu Li Huang, Misbah Irshad, Mustafa K. Ismael, PhD, Ulkar Jabbarli, Rajan Jose, Senthil Kumar Kandasamy, Shumaila Karamat, Pawan Kumar, Rawaz Kurda, Kah Hon Leong, Huey Ling Tan, Mian Habib Ur Rehman Mahmood, Professor, Siti Rabizah Makhsin, Deepak Marla, Fauziah Marpani, Seyedehmaryam Moosavi, Saifful Kamaluddin Muzakir, Ritika Nagpal, Wan Mohd Fazli Wan Nawawi, Ali Abu Odeh, Nur Hidayati Othman, Ying Pei Lim, Nzar Shakr Piro, D. Prabavathy, Liang Qiao, Rozina Abdul Rani, Fazal Raziq, Kishor G. Rewatkar, Nurlan Rzayev, Mohd Rafal Sahudin, Ahmed Salih, Wan Wardatul Amani Wan Salim, Sherin A. Saraireh, Pichiah Saravanan, Tanuj Saxena, Patricia J. Scully, Seema Seema, Raja Noor Amalina Raja Seman, Nur Farha Shaafi, Dalila Shahdan, Munawar Zaman Shahruddin, Elham Sheikhzadeh, Lan Ching Sim, Dharmendra Pratap Singh, Yanamadala Swarnalatha, Bo Tan, Chun Hui Tan, Michael Loong Peng Tan, Sin Tee Tan, Mou'ad A. Tarawneh, Rakesh Vaid, Andrew Thye Shen Wee, Yiqiang Zhan, Mizan Izzati Mat Zin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::625a0b2c9cb35a5aa87d3c8b368fdb07
https://doi.org/10.1016/b978-0-323-85457-3.00099-2
https://doi.org/10.1016/b978-0-323-85457-3.00099-2
Autor:
Devi Dass
Publikováno v:
Applied Surface Science. 488:404-417
The surface passivation is an important technique that suppresses the effects of surface dangling bonds on the one-dimensional (1D) nanostructure and changes their electronic properties due to the elimination of surface states. Hydrogen (H) is one of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e64b4cb4f6c957a31d6b853edbf6dbd4
https://doi.org/10.1016/j.apsusc.2019.05.230
https://doi.org/10.1016/j.apsusc.2019.05.230
Autor:
Devi Dass
Publikováno v:
Journal of Electronic Materials. 48:4679-4687
The structural analysis and electronic properties of unpassivated and hydrogen (H)-passivated germanium (Ge) nanowires (NWs) oriented along , , , and directions using a sp3 tight binding model have been investigated in this paper. It has been observe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48e0896eeeef79ece6a9786b3a1fa489
https://doi.org/10.1007/s11664-019-07258-8
https://doi.org/10.1007/s11664-019-07258-8
Autor:
Devi Dass
Publikováno v:
Journal of Molecular Modeling. 26
In this paper, the structural and electronic properties of a CN fullerene with N = 20, 60, 80, 180, and 240 have been investigated using a sp3 tight-binding model. The analytical expressions for the calculation of the total number of carbon atoms, he
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cf9d9f1c66f7cacd3c2ce5909b4c1d6
https://doi.org/10.1007/s00894-019-4207-0
https://doi.org/10.1007/s00894-019-4207-0
Autor:
Devi Dass
Publikováno v:
Superlattices and Microstructures. 120:108-126
Single walled carbon nanotube (SWCNT), an emerging one-dimensional carbon nanostructure, have several unique attributes and amazing properties that offers a great potential for interconnects, nanoelectronic and optoelectronic devices. For the first t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::755f75009bcba009aa2217418656ebeb
https://doi.org/10.1016/j.spmi.2018.05.023
https://doi.org/10.1016/j.spmi.2018.05.023
Autor:
Devi Dass
Publikováno v:
Diamond and Related Materials. 110:108131
The edge bond relaxation is an interesting techniques used to modify the band gap of an armchair graphene nanoribbon (AGNR) which is not possible for the case of a carbon nanotube. In this work, the modification of band gap of an AGNR by edge bond re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80eb7510aaaabda4b5fa17122979fff9
https://doi.org/10.1016/j.diamond.2020.108131
https://doi.org/10.1016/j.diamond.2020.108131
The exponential rise in the density of silicon CMOS transistors has now reached a limit and threatening to end the microelectronics revolution. To tackle this difficulty, group III–V compound semiconductors due to their outstanding electron transpo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3005155fda9e81c2830346269ffa9421
Autor:
Devi Dass, Kapur
Publikováno v:
The Indian Medical Gazette
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::9cb60a3c3c7a7c7aedf23d3befd955f2
https://pubmed.ncbi.nlm.nih.gov/29007817
https://pubmed.ncbi.nlm.nih.gov/29007817