Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Deva Narayan"'
Autor:
Deva Narayan Baral
Publikováno v:
Nepalese Culture. 16:141-148
This academic article presents an explanatory research study on the archaeological artifacts discovered in the Kichakbadh area, situated in wards 2 and 3 of the Bhadrapur Municipality within the Jhapa district. The objective of this research is to ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ebb997b77378c3ab11ce586bbf93663
https://doi.org/10.3126/nc.v16i1.54161
https://doi.org/10.3126/nc.v16i1.54161
Autor:
S. K. Ahirwal, null Kamal Sarma, null Jaspreet singh, null Tarkeshwar Kumar, null Vivekanakand Bharti, null Deva Narayan, null Amrendra Kumar
Publikováno v:
Indian Journal of Fisheries. 70
Length-frequency distribution, morphometry, length-weight relationship, relative condition factor and sex ratio of the apple snail Pila globosa (Swainson, 1822) were studied from the river Ganga. A total of 922 specimens were collected during July 20
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31e7cb89f882823ac556800368ce0175
https://doi.org/10.21077/ijf.2023.70.1.125224-03
https://doi.org/10.21077/ijf.2023.70.1.125224-03
Autor:
S. K. Ahirwal, Jaspreet Singh, Tarkeshwar Kumar, Vivekanand Bharti, Kamal Sarma, Deva Narayan
Publikováno v:
Indian Journal of Fisheries. 69
The Gangetic pool barb Puntius sophore (Hamilton, 1822) is widely distributed in the freshwater ecosystems of the Indian subcontinent and it is reasonably well-priced due to its nutritional value. A study was conducted to assess the morphometry, leng
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb7eeeaf4e6ef289879d2e7744bd9b6f
https://doi.org/10.21077/ijf.2022.69.4.122014-06
https://doi.org/10.21077/ijf.2022.69.4.122014-06
Autor:
Deva Narayan Pattanayak, William Andrew Hennessy, Bantval Jayant Baliga, Michael S. Adler, C.E. Logan, T.P. Chow
Publikováno v:
IEEE Transactions on Electron Devices. 38:310-315
The static and dynamic interaction between monolithically integrated n- and p-channel, high-voltage lateral insulated-gate bipolar transistors (LGBTs) are studied. In the chosen system partition, three common-source, n-channel LIBGTs are monolithical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8319a938de8ceb481b74c3b32eab7192
https://doi.org/10.1109/16.69911
https://doi.org/10.1109/16.69911
Publikováno v:
Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90..
The latching characteristics of 500V, n-channel HSINFET's are measured and compared to lateral IGBT's with and without collector shorts. In particular, the effect of substrate resistivity, Schottky region length in the collector and emitter shorts on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee2d12933e48df8d605721eee782678f
https://doi.org/10.1109/ispsd.1990.991069
https://doi.org/10.1109/ispsd.1990.991069
Autor:
Deva Narayan Pattanayak, Eric Joseph Wildi, R.S. Ahle, R.S. Scott, J.E. Kohl, Michael S. Adler
Publikováno v:
Technical Digest., International Electron Devices Meeting.
High-voltage complementary pullup and pulldown devices have been fabricated in a high-voltage integrated circuit process that is based on thin epitaxial layers ( >
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d1feeda6b4dd2ff24bbb5c1f9130c09
https://doi.org/10.1109/iedm.1988.32932
https://doi.org/10.1109/iedm.1988.32932
Autor:
T.P. Chow, Bantval Jayant Baliga, Michael S. Adler, Deva Narayan Pattanayak, A. Mogro-Campero
Publikováno v:
Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting.
The effect of proton implantation on the performance of n- and p-channel, 500-V lateral insulated gate bipolar transistors (LIGBTs) are studied. It is shown that proton implantation results in a better forward drop vs. turn-off time than conventional
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b26b6c50e5d76ea4d471d266aaac2b70
https://doi.org/10.1109/bipol.1992.274072
https://doi.org/10.1109/bipol.1992.274072
Publikováno v:
Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics.
A novel reverse-channel lateral IGBT has been studied with numerical simulations and demonstrated experimentally for the first time. It exhibits a negative differential resistance (NDR) region, which is dependent on the gate voltage and has large pea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34ee8fd26c9b99c56af4359ce3e6f5f6
https://doi.org/10.1109/ispsd.1994.583647
https://doi.org/10.1109/ispsd.1994.583647
Autor:
Deva Narayan Pattanayak, Bantval Jayant Baliga, Michael S. Adler, T.P. Chow, Eric Joseph Wildi, J.M. Pimbley
Publikováno v:
IEEE Transactions on Electron Devices. 39:2673
Summary form only given. The operation of current sensors (or pilots) in IGBTs (insulated-gate bipolar transistors) is described experimentally and with two-dimensional simulations. Two different sensor structures are compared. In the most convention
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e52432ef6480bb2f47c26e098d09a216
https://doi.org/10.1109/16.163546
https://doi.org/10.1109/16.163546
Autor:
Bantval Jayant Baliga, Deva Narayan Pattanayak, Eric Joseph Wildi, Michael S. Adler, T.P. Chow, A.L. Robinson
Publikováno v:
IEEE Transactions on Electron Devices. 33:1956-1963
The basic physics of the steady-state characteristics of the lateral insulated gate transistor (LIGT) is discussed. Results from a tWo-dimensional computer simulation Of representative LIGT structures are presented. Several Structural and process enh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e417d94671e4c475f15ea05f0d3e67ca
https://doi.org/10.1109/t-ed.1986.22853
https://doi.org/10.1109/t-ed.1986.22853