Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Detlev Gruetzmacher"'
Publikováno v:
ECS Meeting Abstracts. :1183-1183
Neuromorphic computing inspired by the neural network systems of the human brain enables energy efficient computing for big-data processing. A neural network is formed by thousands or even millions of neurons which are connected by even a higher numb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d4bcdeb7cf2f68d5de2b97d4a8f1bd1
https://doi.org/10.1149/ma2022-02321183mtgabs
https://doi.org/10.1149/ma2022-02321183mtgabs
Autor:
Dan Buca, Moustafa El-kurdi, Jeremy Witzens, Michael Oehme, Giovanni Capellini, Detlev Gruetzmacher
Publikováno v:
ECS Meeting Abstracts. :1166-1166
Internet of Things applications, including medical diagnostics, imaging and industrial process controls, pollution monitoring or real-time motion control, push the extension of the Si photonics towards mid-infrared range. In recent years, group IV Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::546bdeb2e01d984fd11a4700f04cb2ab
https://doi.org/10.1149/ma2022-02321166mtgabs
https://doi.org/10.1149/ma2022-02321166mtgabs
Publikováno v:
ECS Meeting Abstracts. :1298-1298
Neuromorphic computing inspired by neural network systems of the human brain enables energy efficient computing as a solution of the von Neumann bottleneck. A neural network consists of thousands or even millions of neurons which communicate with eac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1d18704ee7b5d921032daad2d565949
https://doi.org/10.1149/ma2022-01291298mtgabs
https://doi.org/10.1149/ma2022-01291298mtgabs
Autor:
Yannik Junk, Mingshan Liu, Marvin Frauenrath, Jean-Michel Hartmann, Detlev Gruetzmacher, Dan Buca, Qing-Tai Zhao
Publikováno v:
ECS Meeting Abstracts. :1285-1285
In recent years, Ge-based group-IV alloys (GeSn, SiGeSn) have received a significant amount of attention as candidates to replace Silicon for future low power and high performance nanoelectronics [1]. The interest in these materials stems primarily f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::204caa7191aa9dc2b8bf4cf4842b9dca
https://doi.org/10.1149/ma2022-01291285mtgabs
https://doi.org/10.1149/ma2022-01291285mtgabs
Autor:
Moustafa El Kurdi, Hans Sigg, Denis Rainko, Nils von den Driesch, Zoran Ikonic, Detlev Gruetzmacher, Dan Buca, Daniela Stange, Jean-Michel Hartmann
Publikováno v:
Silicon Photonics XIV.
GeSn is discussed as solution to realize the dream of a group IV light source integrated on a Si chip. Sn added into a Ge lattice decreases the conduction band energies leading to a direct bandgap semiconductor band structure. However, the compressiv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::607f37ac919c0439a6a86a519b4e2ee8
https://doi.org/10.1117/12.2511367
https://doi.org/10.1117/12.2511367
Autor:
K. Weis, Thomas Schaepers, Martina Luysberg, Detlev Gruetzmacher, Stephan Wirths, Steffi Lenk, Andreas Penz, K. Sladek, Shima Alagha, Masashi Akabori, Hilde Hardtdegen, Hans Lueth, Christian Volk
Publikováno v:
Scopus-Elsevier
The influence of Si-doping on the growth and material characteristics of InAs nanowires deposited by metal-organic vapor phase epitaxy (MOVPE) was investigated. It was observed that above a certain partial pressure ratio, doping has an influence on t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::db00d657896dc4d0911b94582f8c3051
https://doi.org/10.1557/proc-1258-p02-05
https://doi.org/10.1557/proc-1258-p02-05
Autor:
Laurent Diehl, Detlev Gruetzmacher, Gabriel Dehlinger, Elizabeth Mueller, Jérôme Faist, Hans Sigg, Ulf Gennser, Klaus Ensslin
Publikováno v:
SPIE Proceedings.
We report the observation of electroluminescence from intersubband transitions in the valence band of Si/SiGe quantum cascade structures. The samples were grown by molecular beam epitaxy at 350 degree(s)C and reveal good crystal quality as determined
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f07aa794cc387dd35ff9d1a262a64972
https://doi.org/10.1117/12.426922
https://doi.org/10.1117/12.426922
Autor:
Detlev Gruetzmacher, Siegfried Mantl, Qing-Tai Zhao, Simon Richter, Lars Knoll, Juergen Moers, Julian Gerharz, Gregor Mussler, Dan Buca, Renato Minamisawa
Publikováno v:
ECS Meeting Abstracts. :3192-3192
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2ad5b837d07631c1f20eacd2d7bc4d2
https://doi.org/10.1149/ma2012-02/43/3192
https://doi.org/10.1149/ma2012-02/43/3192
Autor:
Elizabeth Mueller, Jan-Christoph Panitz, Detlev Gruetzmacher, Ulf Gennser, Oliver Leifeld, Rainer Hartmann, Christian David
Publikováno v:
Scopus-Elsevier
Molecular beam epitaxy (MBE) has been used to deposit quantum structures in the material system Si-Ge-C in order to evaluate the possibilities for Si based opto-electronics. In particular the growth of Si/SiGeC quantum wells, the growth of quantum st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::39c3024cf11eb3ac5bb63d3592abb608
http://www.scopus.com/inward/record.url?eid=2-s2.0-0033607986&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0033607986&partnerID=MN8TOARS
