Zobrazeno 1 - 10
of 484
pro vyhledávání: '"Detlev, Grützmacher"'
Autor:
Patrick Zellekens, Russell S. Deacon, Pujitha Perla, Detlev Grützmacher, Mihail Ion Lepsa, Thomas Schäpers, Koji Ishibashi
Publikováno v:
Communications Physics, Vol 5, Iss 1, Pp 1-9 (2022)
Josephson junctions, comprised of semiconducting nanowires, can be used to design qubit architectures but for the successful application, it is necessary to study their intrinsic excitation spectrum. Here, the authors adapt a flip-chip method to real
Externí odkaz:
https://doaj.org/article/53c219bdfdf143e0b358ca82bde4680e
Autor:
Matvey Lyatti, Ines Kraiem, Torsten Röper, Irina Gundareva, Gregor Mussler, Abdur Rehman Jalil, Detlev Grützmacher, Thomas Schäpers
Publikováno v:
Materials, Vol 17, Iss 3, p 558 (2024)
We fabricated high-quality c-axis-oriented epitaxial YBa2Cu3O7−x films with 15% of the yttrium atoms replaced by terbium (YTBCO) and studied their electrical properties. The Tb substitution reduced the charge carrier density, resulting in increased
Externí odkaz:
https://doaj.org/article/dfacbaaf22b2464b98a2d61843440f48
Autor:
Erik Zimmermann, Michael Schleenvoigt, Alina Rupp, Gerrit Behner, Jan Karthein, Justus Teller, Peter Schüffelgen, Hans Lüth, Detlev Grützmacher, Thomas Schäpers
Publikováno v:
JPhys Materials, Vol 7, Iss 1, p 015015 (2024)
We present a symmetrization routine that optimizes and eases the analysis of imperfect, experimental data featuring the anomalous Hall hysteresis. This technique can be transferred to any hysteresis with (point-)symmetric behavior. The implementation
Externí odkaz:
https://doaj.org/article/71ef9add5cc54a1e842c8336b06ca69f
Autor:
Minh N. Bui, Stefan Rost, Manuel Auge, Jhih-Sian Tu, Lanqing Zhou, Irene Aguilera, Stefan Blügel, Mahdi Ghorbani-Asl, Arkady V. Krasheninnikov, Arsalan Hashemi, Hannu-Pekka Komsa, Lei Jin, Lidia Kibkalo, Eoghan N. O’Connell, Quentin M. Ramasse, Ursel Bangert, Hans C. Hofsäss, Detlev Grützmacher, Beata E. Kardynal
Publikováno v:
npj 2D Materials and Applications, Vol 6, Iss 1, Pp 1-8 (2022)
Abstract In this work, we study ultra-low energy implantation into MoS2 monolayers to evaluate the potential of the technique in two-dimensional materials technology. We use 80Se+ ions at the energy of 20 eV and with fluences up to 5.0·1014 cm−2.
Externí odkaz:
https://doaj.org/article/8fae92d734494f999ea5315403e3a69a
Autor:
Fengben Xi, Andreas Grenmyr, Jiayuan Zhang, Yi Han, Jin Hee Bae, Detlev Grützmacher, Qing‐Tai Zhao
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 3, Pp n/a-n/a (2023)
Abstract Neuromorphic computing employs a great number of artificial synapses which transfer information between neurons. Conventional two‐ or three‐terminal artificial synapses with homosynaptic plasticity suffer from a positive feedback loop pr
Externí odkaz:
https://doaj.org/article/9fc671b781a042fbb685b395abfe2277
Autor:
Jonas Kölzer, Kristof Moors, Abdur Rehman Jalil, Erik Zimmermann, Daniel Rosenbach, Lidia Kibkalo, Peter Schüffelgen, Gregor Mussler, Detlev Grützmacher, Thomas L. Schmidt, Hans Lüth, Thomas Schäpers
Publikováno v:
Communications Materials, Vol 2, Iss 1, Pp 1-7 (2021)
Topological surface states of three-dimensional topological insulators exhibit distinct magnetotransport properties. Here, a steering effect is demonstrated for three-terminal junctions, which is driven by an in-plane magnetic field and makes the jun
Externí odkaz:
https://doaj.org/article/9e7eb06996aa4439ad5a154099d3d144
Autor:
Abdur Rehman Jalil, Xiao Hou, Peter Schüffelgen, Jin Hee Bae, Elmar Neumann, Gregor Mussler, Lukasz Plucinski, Detlev Grützmacher
Publikováno v:
Nanomaterials, Vol 13, Iss 14, p 2143 (2023)
Over the past three decades, the growth of Bi thin films has been extensively explored due to their potential applications in various fields such as thermoelectrics, ferroelectrics, and recently for topological and neuromorphic applications, too. Des
Externí odkaz:
https://doaj.org/article/772ca79b22b74768b4b71c10e94a0191
Autor:
Jinzhong Zhang, Pok-Lam Tse, Abdur-Rehman Jalil, Jonas Kölzer, Daniel Rosenbach, Martina Luysberg, Gregory Panaitov, Hans Lüth, Zhigao Hu, Detlev Grützmacher, Jia Grace Lu, Thomas Schäpers
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-8 (2021)
A deep understanding of low-temperature transport properties of GeTe material remains a challenge. Here, the authors investigate phase-coherent phenomena in GeTe nanowire structures where the occurrence of magnetic flux-periodic oscillations come fro
Externí odkaz:
https://doaj.org/article/a3feaa560faf488bb377b978de443326
Autor:
Hisao Nakamura, Johannes Hofmann, Nobuki Inoue, Sebastian Koelling, Paul M. Koenraad, Gregor Mussler, Detlev Grützmacher, Vijay Narayan
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-10 (2020)
Abstract The interface between topological and normal insulators hosts metallic states that appear due to the change in band topology. While topological states at a surface, i.e., a topological insulator-air/vacuum interface, have been studied intens
Externí odkaz:
https://doaj.org/article/d11c7ac399a3471a845d6e573600f5a8
Autor:
Dennis Heffels, Declan Burke, Malcolm R. Connolly, Peter Schüffelgen, Detlev Grützmacher, Kristof Moors
Publikováno v:
Nanomaterials, Vol 13, Iss 4, p 723 (2023)
Topological insulator (TI) nanoribbons with proximity-induced superconductivity are a promising platform for Majorana bound states (MBSs). In this work, we consider a detailed modeling approach for a TI nanoribbon in contact with a superconductor via
Externí odkaz:
https://doaj.org/article/2596c75e58e141cc9fc3196bdcdb56ba