Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Detlef Peschel"'
Autor:
Oliver Ambacher, Rudiger Quay, Arnulf Leuther, Friedbert van Raay, Detlef Peschel, Peter Brückner, Michael Schlechtweg, Dirk Schwantuschke
Publikováno v:
2018 13th European Microwave Integrated Circuits Conference (EuMIC).
An AlGaN/GaN HEMT- and an InAlAs/lnGaAs mHEMT technology, both with a gate-length of 100 nm, are investigated w.r.t. state dependency vs. average gate and drain voltages, and low-frequency (LF) dispersion, and the separation of thermal effects is dem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6105661b1ad695dddffa232bdd8fec0e
https://doi.org/10.23919/eumic.2018.8539966
https://doi.org/10.23919/eumic.2018.8539966
Autor:
Friedbert van Raay, Detlef Peschel, Michael Schlechtweg, Dirk Schwantuschke, Arnulf Leuther, Rudiger Quay, Peter Brückner
Publikováno v:
2018 11th German Microwave Conference (GeMiC).
An AlGaN/GaN HEMT- and an InAlAs/InGaAs mHEMT technology, both with a gate-length of 100 nm, are investigated w.r.t. low-frequency dispersion and state dependency vs. average gate and drain voltages. Based on a comprehensive DC-CW and pulsed-RF small
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c7230aa7bdef7e6d148d7ba30dda205
https://doi.org/10.23919/gemic.2018.8335056
https://doi.org/10.23919/gemic.2018.8335056
Autor:
Hermann Massler, Matthias Seelmann-Eggebert, Matthias Ohlrogge, Axel Tessmann, Michael Schlechtweg, Detlef Peschel, Oliver Ambacher, Rainer Weber, Arnulf Leuther, M. Riessle
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 63:2335-2342
It is well known that, in the millimeter (mm-wave) and sub-mm-wave range, on-wafer S-parameter measurements are often inaccurate and suffer from serious systematic artifacts. In this paper, we confirm that these artifacts are related to spurious wave
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::42fb37c4a5e39d7f8280f9761072392c
https://doi.org/10.1109/tmtt.2015.2436919
https://doi.org/10.1109/tmtt.2015.2436919
Autor:
Oliver Ambacher, Richard Reiner, Patrick Waltereit, Heiko Czap, Stefan Müller, Michael Mikulla, Detlef Peschel, Rudiger Quay
Publikováno v:
physica status solidi c. 10:831-834
We present results from GaN-based high voltage transistors used for power switching applications. The static and dynamic properties of transistors on SiC and Si substrates are determined. Overall, this technology is capable to deliver 1000 V breakdow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::532762cf3d5c52cab02d1a568f8b1b0e
https://doi.org/10.1002/pssc.201200563
https://doi.org/10.1002/pssc.201200563
Autor:
Oliver Ambacher, Rudiger Quay, Matthias Ohlrogge, Friedbert van Raay, Michael Schlechtweg, Dirk Schwantuschke, Detlef Peschel
Publikováno v:
2016 11th European Microwave Integrated Circuits Conference (EuMIC).
A new versatile parasitic network extraction method for microwave dual-gate and cascode HEMTs is presented which is based on 2.5D EM simulation of the passive metallization structures. After port count reduction and offset capacitance correction at t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea58faa0ffe14a5aaded050e55dddf3c
https://doi.org/10.1109/eumic.2016.7777535
https://doi.org/10.1109/eumic.2016.7777535
Autor:
Matthias Seelmann-Eggebert, Oliver Ambacher, Friedbert van Raay, Michael Schlechtweg, Dirk Schwantuschke, Rudiger Quay, Detlef Peschel
Publikováno v:
2014 9th European Microwave Integrated Circuit Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f952ca833627a34050f278f93571ecf5
https://doi.org/10.1109/eumic.2014.6997827
https://doi.org/10.1109/eumic.2014.6997827
Autor:
Michael Schlechtweg, Dirk Schwantuschke, Rudiger Quay, F. van Raay, Matthias Seelmann-Eggebert, Oliver Ambacher, Detlef Peschel
A new concept for the low-frequency dispersion aspect of large-signal modeling of microwave III-V field-effect transistors is presented. The approach circumvents the integrability problem between the small-signal transconductance G mRF and the output
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::73896e6e121a9670876a5d9b62211ab5
https://publica.fraunhofer.de/handle/publica/231595
https://publica.fraunhofer.de/handle/publica/231595
