Zobrazeno 1 - 10
of 49
pro vyhledávání: '"Dethard Peters"'
Autor:
Dethard Peters, Wolfgang Bergner, Thomas Aichinger, Thomas Basler, Daniel Kueck, Romain Esteve
Publikováno v:
Materials Science Forum. 897:489-492
A detailed analysis of the typical static and dynamic performance of the new developed Infineon 1200V CoolSiCTM MOSFET is shown which is designed for an on-resistance of 45 mΩ. In order to be compatible to various standard gate drivers the gate volt
Publikováno v:
Materials Science Forum. 858:643-646
Anneals in nitrogen (N) containing atmosphere have been proven as efficient means of improving the channel mobility of SiC MOSFETs. It has been demonstrated that simultaneously the density of interface traps is reduced. However, this process is not y
Autor:
Dethard Peters, Katja Puschkarsky, Thomas Basler, Hans Reisinger, Thomas Aichinger, Gerald Rescher
Publikováno v:
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Silicon carbide (SiC) based metal-oxide semiconductor-field-effect-transistors (MOSFETs) show excellent switching performance and reliability. However, compared to silicon devices the more complex properties of the semiconductor-dielectric interface
Publikováno v:
Materials Science Forum. :512-515
We report on the electrical characterization of the Metal-Oxide-Semiconductor (MOS) interfacerealized on in-situ Ge-doped n-type 4H-SiC epilayers grown by Chemical Vapour Deposition(CVD). In order to study the relevance of this novel material for MOS
Autor:
Gregor Pobegen, Alberto Salinaro, Bernd Zippelius, Thomas Aichinger, Peter Friedrichs, Lothar Frey, Dethard Peters
Publikováno v:
IEEE Transactions on Electron Devices. 62:155-163
This paper shows a successful transfer of the charge pumping (CP) method, which is extensively applied on silicon (Si) transistors, to Si carbide (SiC) lateral MOSFETs to characterize the quality of the SiC/SiO2 interface near the conduction and vale
Autor:
Robert Meszaros, Dethard Peters, Gregor Pobegen, Peter Hadley, Jonathon Cottom, Gernot Gruber, Thomas Aichinger, Markus Koch
SiC based metal-oxide-semiconductor field-effect transistors (MOSFETs) have gained a significant importance in power electronics applications. However, electrically active defects at the SiC/SiO$_2$ interface degrade the ideal behavior of the devices
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::462dcc03034614138c50fd9f5eb3b462
http://arxiv.org/abs/1709.08664
http://arxiv.org/abs/1709.08664
Autor:
Thomas Basler, Ralf Siemieniec, Thomas Aichinger, Romain Esteve, Wolfgang Bergner, Dethard Peters, Bernd Zippelius, Daniel Kück
Publikováno v:
2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe).
This work discusses the challenges in the design of a SiC Power MOSFET compared to their silicon-based relatives and describes a novel SiC Trench MOSFET concept. The most prominent difficulties being identified are related to the properties of the ch
Autor:
Thomas Basler, Romain Esteve, Wolfgang Bergner, Dethard Peters, Daniel Kueck, Thomas Aichinger, Ralf Siemieniec
Publikováno v:
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).
This paper describes a novel SiC trench MOSFET concept. The device is designed to balance low conduction losses with Si-IGBT like reliability. Basic features of the static and dynamic performance as well as short circuit capability of the 45mΩ/1200
Publikováno v:
Materials Science Forum. :529-532
We study the structure of SiC/SiO2 interface defects and the effects of negative bias temperature stress (NBTS) in lateral 4H silicon carbide (SiC) PMOSFETs. Our devices have 90 nm thick SiO2 gate oxides thermally grown in N2O ambient at 1280°C on n
Publikováno v:
Materials Science Forum. :957-960
Silicon Carbide bipolar diodes offer unique ultrafast switching behavior for high voltage and high power applications [1]. But due to the small chip size it is required to parallel a lot of dice and therefore it is necessary to get detailed informati