Impact of vacuum anneal at low temperature on Al2O3/In-based III–V interfaces

Autor: Martinez, E., Grampeix, H., Desplats, O., Herrera-Gomez, A., Ceballos-Sanchez, O., Guerrero, J., Yckache, K., Martin, F.

Publikováno v: In Chemical Physics Letters 29 June 2012 539-540:139-143

N-POEM: Nanostructures imprinted on polymers and Si for electromagnetic applications

Autor: Gourgon, C., Ferchichi, A., Panabière, M., Grinenval, E., Desplats, O., Brückner, J.B., Escoubas, Ludovic, Le Rouzo, Judikaël, Mikuszeit, N., Viala, B., Dubarry, C., V., Brissonneau, Vukadinovic, Nicolas, Berginc, G., Lannuzel, Thierry

Publikováno v: Micro-and Nano-Engineering conference-MNE 2014
Micro-and Nano-Engineering conference-MNE 2014, 2014, Lausanne, Suisse, Switzerland
Micro-and Nano-Engineering conference-MNE 2014, 2014, Lausanne, Switzerland

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::ee2124195edf03144b4c12dd79378ce4
https://hal.science/hal-01798495

Top-flat and top-patterned cone gratings for mid-infrared antireflective properties

Autor: B. Brückner, J., Le Rouzo, J., Escoubas, Ludovic, Berginc, G., Gourgon, C., Desplats, O., Simon, J.J.

Publikováno v: SPIE Photonics West 2013
SPIE Photonics West 2013, 2013, San Francisco, United States

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::92aaf545741e5d4ba1291a4b51618b5a
https://hal.archives-ouvertes.fr/hal-00941695

Flat and patterned-topped silicon cone gratings for visible and mid infrared antireflective properties

Autor: B. Brückner, J., Le Rouzo, J., Escoubas, Ludovic, Berginc, G., Gourgon, C., Desplats, O., Simon, J.J.

Publikováno v: OSA Optical Interference Coating 2013
OSA Optical Interference Coating 2013, 2013, Whistler, Canada

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::0c08059fec2ee9ed291ac024b4689774
https://hal.archives-ouvertes.fr/hal-00941697

Fabrication and characterization of 200-nm self-aligned In0.53Ga0.47As MOSFET

Autor: Olivier, O., Wichmann, N., Mo, J.J., Noudeviwa, A., Roelens, Y., Desplanque, L., Wallart, X., Danneville, F., Dambrine, G., Martin, F., Desplats, O., Wang, Y., Chauvat, M.P., Ruterana, P., Maher, H., Saint-Martin, J., Shi, Minghua, Bollaert, S.

Publikováno v: Proceedings of the 22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10
22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10
22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, May 2010, Takamatsu, Japan. pp.41-43, ⟨10.1109/ICIPRM.2010.5515926⟩
22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, 2010, Japan. pp.41-43, ⟨10.1109/ICIPRM.2010.5515926⟩

International audience; In this paper, a 200 nm n-channel inversion-type self-aligned In 0.53 Ga 0.47 As MOSFET with a Al 2 O 3 gate oxide deposited by Atomic Layer Deposition (ALD) is demonstrated. Two ion implantation processes using silicon nitrid

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::3189972bbabd0fdf209909d05da4a17e
https://hal.science/hal-00549921