Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Desiree Monti"'
Autor:
Nicola Trivellin, Enrico Zanoni, Desiree Monti, Gaudenzio Meneghesso, Matteo Buffolo, Matteo Meneghini, C. De Santi
Publikováno v:
Microelectronics Reliability. :868-872
We present the first comprehensive study of the degradation of 16 mW state of the art UVC LEDs emitting at 280 nm. The study, based on combined electrical and spectral characterization, allows to identify different degradation regimes and mechanisms,
Autor:
C. De Santi, Matteo Meneghini, Piotr Perlin, Desiree Monti, Agata Bojarska, Enrico Zanoni, Gaudenzio Meneghesso
Publikováno v:
Microelectronics Reliability. :864-867
The aim of this paper is to illustrate the dependence of DLTS characteristics and degradation of InGaN-based laser diodes (LDs) on the density of dislocations. Three groups of multi-quantum well LDs with different dislocation densities were submitted
Autor:
Jens Rass, Matteo Meneghini, Johannes Glaab, Carlo De Santi, Frank Mehnke, Sven Einfeldt, Johannes Enslin, Enrico Zanoni, Desiree Monti, Michael Kneissl, Gaudenzio Meneghesso, Tim Wernicke
Publikováno v:
IEEE Transactions on Electron Devices. 64:200-205
This paper describes an extensive analysis of the degradation of (InAlGa)N-based UV-B light-emitting diodes (LEDs) submitted to constant current stress. This paper is based on combined electrical characterization, spectral analysis of the emission, d
Autor:
Nicola Renso, Carlo De Santi, Alessandro Caria, Gaudenzio Meneghesso, Matteo Meneghini, Nicola Trivellin, Matteo Buffolo, Desiree Monti, Enrico Zanoni, F. Piva
Publikováno v:
Light-Emitting Devices, Materials, and Applications.
Within this paper, we summarize some of the degradation mechanism that still affect GaN-based optoelectronic devices. The most common source of the degradation is the creation of lattice defects, which lower the optical efficiency due to their role a
Autor:
Gaudenzio Meneghesso, Pradip Dalapati, Roland Zeisel, Bastian Galler, C. De Santi, Enrico Zanoni, Nicola Renso, Desiree Monti, Matteo Meneghini, Michael Binder
Publikováno v:
Light-Emitting Devices, Materials, and Applications.
Avalanche generation is a physical mechanism responsible for the breakdown at extremely high field, such as in the reverse bias conditions typical of ESD discharges. In this work, for the first time we provide experimental evidence that avalanche gen
Autor:
Carlo De Santi, Pradip Dalapati, Matteo Meneghini, Desiree Monti, Gaudenzio Meneghesso, Enrico Zanoni
Publikováno v:
Light-Emitting Diodes ISBN: 9783319992105
This chapter presents an extensive review of the literature on the degradation processes of GaN-based UV-A, UV-B, and UV-C LEDs. For the state-of-the-art devices, the main open issue is the increase in Shockley–Read–Hall non-radiative recombinati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::94cdbe82e78fe10a5a307e704ab17812
https://doi.org/10.1007/978-3-319-99211-2_11
https://doi.org/10.1007/978-3-319-99211-2_11
Autor:
Gaudenzio Meneghesso, Nicola Trivellin, Carlo De Santi, Matteo Meneghini, Matteo Buffolo, Desiree Monti, F. Piva, Enrico Zanoni
With this work we report on characterization and reliability analysis of 280 nm high power commercial LEDs emitting 18 mW at 200 mA, with a peak wavelength of 280 nm. Spectral characterization reports the presence of a main emission peak and a sideba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::514c0eb188dfa8069db2cba42334f80d
http://hdl.handle.net/11577/3327058
http://hdl.handle.net/11577/3327058
Publikováno v:
Università degli Studi di Padova-IRIS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::5e0109e52845c7d3f7e249f553b91724
http://hdl.handle.net/11577/3333022
http://hdl.handle.net/11577/3333022
Autor:
Tim Wernicke, Carlo De Santi, Frank Mehnke, Johannes Enslin, F. Piva, Sven Einfeldt, Michael Kneissl, Jens Rass, Gaudenzio Meneghesso, Silvia Da Ruos, Enrico Zanoni, Desiree Monti, Matteo Meneghini, Johannes Glaab
The aim of this paper is to investigate the degradation mechanisms of UV-B AlGaN-based light-emitting diodes (LEDs) submitted to constant current stress beyond the typical application conditions. We demonstrate the existence of two main degradation m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::05167de68f3eaa9f6cbfd7a057f9df44
http://hdl.handle.net/11577/3309206
http://hdl.handle.net/11577/3309206
Autor:
Nicola Renso, Carlo De Santi, Dalapati, P., Desiree Monti, Binder, M., Galler, B., Zeisel, R., Gaudenzio Meneghesso, ENRICO ZANONI, matteo meneghini
Publikováno v:
Università degli Studi di Padova-IRIS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::f4c8e41a903f3428e0202da5e792506d
http://hdl.handle.net/11577/3332919
http://hdl.handle.net/11577/3332919