Zobrazeno 1 - 10
of 119
pro vyhledávání: '"Dershin Gan"'
Autor:
Kuang-Kuo Wang, Hsing-Lu Huang, Ting-Yu Liu, Dershin Gan, Yu-Wei Hsu, Yuang-Shing Fang, Hui-Chun Huang, Cheng-Fong Yeh
Publikováno v:
Thin Solid Films. 659:64-69
The initial reaction between Pt and molten Sn has been studied by dipping tests of 1 and 2 s. It was found that both PtSn and PtSn 4 formed in the first second of contact. PtSn formed 7 nm (1 s) and 20 nm (2 s) thick layers on top of the Pt substrate
Autor:
Hong-Yi Liang, Kuang-Kuo Wang, Yu-Ling Chang, Dershin Gan, Liuwen Chang, Hung-Ping Wang, Chiung-Wen Hsu
Publikováno v:
Materials Characterization. 137:189-200
The formation of Fe2Al5-xZnx inhibition layer at the Fe-Zn interface has been characterized by scanning electron microscopy/electron backscatter diffraction and transmission electron microscopy for interstitial-free steels galvanized in Zn baths cont
Publikováno v:
Materials Characterization. 107:23-28
Hot-dip galvannealed coatings of two Mn–Si TRIP steels have been characterized by transmission electron microscopy to study the crystallographic orientation relationships between the α-Fe and Γ1 phases, the Γ1 and Γ2 phases, as well as the Γ2
Publikováno v:
Thin Solid Films. 589:27-31
The orientation relationships and interfacial planes of the e-Ag 3 Sn/Ag and ζ-Ag 4 Sn/Ag interfaces have been studied by transmission electron microscopy. Epitaxial Ag thin films were grown on the NaCl (001) and (111) surfaces and Sn was evaporated
Publikováno v:
Thin Solid Films. 562:398-404
The orientation relationships and interfaces between e-Cu3Sn and Cu have been studied by transmission electron microscopy. Epitaxial Cu thin films were grown on the NaCl (001) and (111) surfaces and then Sn was evaporated onto the Cu films at 200 or
Autor:
Hui-Chun Huang, Ming-Yen Tsai, Ann-Kuo Chu, Po-Yung Liao, Tien-Yu Hsieh, Kuo-Kuang Chen, Hua-Mao Chen, Ting-Chang Chang, Dershin Gan, Yu-Xin Yang, Hsueh-Hsing Lu, Ching-En Chen, Tsung-Hsiang Shih, Bo-Wei Chen
Publikováno v:
SID Symposium Digest of Technical Papers. 46:772-774
This letter demonstrates a mobility enhancing method using a multi-active layer structure in oxide TFTs. The active layers are deposited in sequence according to their different conductivities, which can be performed with different materials or diffe
Publikováno v:
Applied Surface Science. 285:458-468
This study investigated the interaction between the Al in the Zn bath and the surface oxides formed by selective oxidation on a 1.2Si–1.5Mn TRIP steel during hot-dip galvanizing. XPS and TEM were employed for characterization. The results indicated
Autor:
Te-Chih Chen, Ting-Chang Chang, Yu Chun Chen, Fu-Yen Jian, Sheng-Yao Huang, Hui-Chun Huang, Dershin Gan, Min-Chen Chen
Publikováno v:
Surface and Coatings Technology. 231:117-121
This work presents the light–color-dependent negative bias stress (NBIS) effect on amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) with Al2O3 passivation layer. The colors of incident photon are varied from red to blue, th
Publikováno v:
Journal of The Electrochemical Society. 159:C561-C570
The present study aims at clarifying the oxides that form on the surface of a 1.2Si-1.5Mn (in wt%) transformation-induced plasticity (TRIP) steel during intercritical annealing. X-ray photoelectron spectroscopy and transmission electron microscopy we
Autor:
Jheng-Jie Huang, Po-Chun Yang, New-Jin Ho, Yu-Ting Chen, Ting-Chang Chang, Dershin Gan, Ming-Jinn Tsai, Hsueh-Chih Tseng, Hui-Chun Huang, Simon M. Sze
Publikováno v:
Thin Solid Films. 520:1656-1659
This paper studies the effects of both the positive and negative forming processes on the resistive switching characteristics of a Pt/Yb2O3/TiN RRAM device. The polarity of the forming process can determine the transition mechanism, either bipolar or