Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Derrick W. Foster"'
Autor:
Arthur J. Learn, Derrick W. Foster
Publikováno v:
Journal of Applied Physics. 61:1898-1904
The low‐pressure chemical vapor deposition of phosphorus‐doped silicon films on oxidized silicon wafers was investigated as a function of phosphine/silane mole ratio, silane partial pressure, temperature, and wafer spacing. The deposition rate de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ebace05b1ae6c0184fd441adaff93e9
https://doi.org/10.1063/1.338036
https://doi.org/10.1063/1.338036
Autor:
Arthur J. Learn, Derrick W. Foster
Publikováno v:
Journal of Applied Physics. 58:2001-2007
The room‐temperature electrical resistivity, grain size, and impurity content of tungsten films deposited at low pressure on silicon wafers from tungsten hexafluoride and hydrogen reactants were determined. These properties were examined as functio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b458d621bcfd8fc1da13d0e178b30913
https://doi.org/10.1063/1.336010
https://doi.org/10.1063/1.336010
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 4:1182
The growth of silicon films by low pressure chemical vapor deposition in an unique vertical‐flow reactor and in a conventional tube reactor is studied, with emphasis on the vertical‐flow reactor. For a hydrogen‐carried silane process in the ver
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92baf3a89293113a4fc087dc76455d43
https://doi.org/10.1116/1.583480
https://doi.org/10.1116/1.583480
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