Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Derrick W. Chan"'
Publikováno v:
Pacing and Clinical Electrophysiology. 34:348-353
Background: Although inappropriate shocks are known to be an important consequence of implantable cardioverter-defibrillators (ICDs), the subjective experience of pain intensity perceived by those receiving inappropriate versus appropriate shocks has
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b52514642ce7fd3748ca87ee98459d9f
https://doi.org/10.1111/j.1540-8159.2010.02971.x
https://doi.org/10.1111/j.1540-8159.2010.02971.x
Autor:
Tomoyuki, Akiyama, Derrick W, Chan, Cristina Y, Go, Ayako, Ochi, Irene M, Elliott, Elizabeth J, Donner, Shelly K, Weiss, O Carter, Snead, James T, Rutka, James M, Drake, Hiroshi, Otsubo
Publikováno v:
Epilepsia. 52(1)
We developed a technique to produce images of dynamic changes in ictal high-frequency oscillations (HFOs)40 Hz recorded on subdural electroencephalography (EEG) that are time-locked to the ictal EEG and ictal semiology video. We applied this techniqu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::e5e2f4dc0e0b7730f08c7363bf4cbf75
https://pubmed.ncbi.nlm.nih.gov/21070217
https://pubmed.ncbi.nlm.nih.gov/21070217
Autor:
Ludmila Kazdova, Miroslava Šimáková, Nathan Qi, Petr Jansa, Jiri Forejt, Vaclav Zidek, Derrick W. Chan, Vladimír Landa, Petr Mlejnek, Vladimir Kren, Timothy J. Aitman, Drahomira Krenova, J M Wang, Michal Pravenec, Theodore W. Kurtz
Publikováno v:
Hypertension (Dallas, Tex. : 1979). 51(1)
Approximately 30% of patients with hypertension have hepatic steatosis, and it has recently been proposed that fatty liver be considered a feature of the metabolic syndrome. Obesity, diet, and level of physical activity are likely factors modulating
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ee87635113827f166badf0c883d808be
https://pubmed.ncbi.nlm.nih.gov/18071061
https://pubmed.ncbi.nlm.nih.gov/18071061
Autor:
Derrick W. Chang, 張文彥
97
The modern devices are operated at near-ballistic conditions. Therefore, the conventional model of devices should be corrected by the carriers transport model. The SiGe on S/D pMOS devices called as uniaxial compressive strained-Si devices ha
The modern devices are operated at near-ballistic conditions. Therefore, the conventional model of devices should be corrected by the carriers transport model. The SiGe on S/D pMOS devices called as uniaxial compressive strained-Si devices ha
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/12743621279644917993
