Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Derrick S. Kamber"'
Autor:
Dirk Ehrentraut, Jonathan D. Cook, Rajeev T. Pakalapati, Wenkan Jiang, Derrick S. Kamber, Mark P. D'Evelyn
Publikováno v:
physica status solidi (b). 252:1069-1074
A novel, highly scalable apparatus has been employed to perform high temperature ammonothermal growth of (0001) GaN bulk crystals up to 52 mm in diameter and to a thickness of greater than 2 mm. X-ray characterization of the crystals shows excellent
Autor:
Dirk Ehrentraut, Mark P. D'Evelyn, Hak Do Yoo, Rajeev T. Pakalapati, Derrick S. Kamber, Wenkan Jiang, Bradley C. Downey
Publikováno v:
Journal of Crystal Growth. 403:18-21
A novel apparatus has been employed to grow ammonothermal (0001) gallium nitride (GaN) with diameters up to 2 in. The crystals have been characterized by x-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM),
Autor:
Mark P. D'Evelyn, Derrick S. Kamber, Hak Do Yoo, Wenkan Jiang, Dirk Ehrentraut, Rajeev T. Pakalapati, Bradley C. Downey
Publikováno v:
ECS Transactions. 58:287-294
Soraa has developed a novel ammonothermal approach for growth of high quality, true bulk GaN crystals at a greatly reduced cost, known as SCoRA (Scalable Compact Rapid Ammonothermal). SCoRA GaN growth has been performed on seed crystals with diameter
Publikováno v:
physica status solidi c. 8:1463-1466
Thick c-plane aluminum nitride (AlN) films were grown directly onto lens shaped patterned c-plane sapphire substrates by hydride vapor phase epitaxy (HVPE). The sapphire patterning consisted of convex hemispherical lenses in a hexagonal pattern. Thes
Autor:
Benjamin A. Haskell, Steven P. DenBaars, James S. Speck, Shuji Nakamura, S. Newman, Yuan Wu, Derrick S. Kamber
Publikováno v:
Journal of Crystal Growth. 297:321-325
Thick AlN layers were grown directly on sapphire substrates by hydride vapor phase epitaxy at growth rates of 40–60 μm/h. The resulting films were colorless, smooth and specular. Subsurface cracking, attributed to the plastic relief of tensile str
Autor:
J. Cook, Mark P. D'Evelyn, M. Grundmann, Dirk Ehrentraut, Rajeev T. Pakalapati, Bradley C. Downey, Wenkan Jiang, Derrick S. Kamber, H. Yoo
Publikováno v:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII.
Soraa has developed a novel ammonothermal approach for growth of high quality, true bulk GaN crystals at a greatly reduced cost. Soraa’s patented approach, known as SCoRA (Scalable Compact Rapid Ammonothermal) utilizes internal heating to circumven
Spin-on processing is used in many industries to deposit very thin coatings on flat substrates, including silicon wafers, flat-panel displays, and precision optical components. A liquid precursor solution is first dispensed onto the surface of the su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::422dd6c45e3b93657f9e8ad735d7d97d
Autor:
Mark P. D'Evelyn, Bradley C. Downey, Derrick S. Kamber, Dirk Ehrentraut, Rajeev T. Pakalapati, Wenkan Jiang, Douglas W. Pocius, Melvin McLaurin
Publikováno v:
Japanese Journal of Applied Physics. 52:08JA01
Ammonothermal GaN growth using a novel apparatus has been performed on c-plane, m-plane, and semipolar seed crystals with diameters between 5 mm and 2 in. to thicknesses of 0.5–3 mm. The highest growth rates are greater than 40 µm/h and rates in t
Autor:
Stuart Brinkley, James S. Speck, Shuji Nakamura, Hisashi Masui, Steven P. DenBaars, Derrick S. Kamber, Troy J. Baker, Feng Wu, Hong Zhong, Michael Iza
Publikováno v:
Semiconductor Science and Technology. 25:015003
Discrete dies of the light-emitting diode (LED) fabricated on a (1 1 2)-oriented GaN template exhibited electroluminescence peaked at 467 nm and optical output power was greater than 200 µW at 20 mA. The LED was found to have quantum well structure
Autor:
Shuji Namakura, S. Newman, Zhen Chen, James S. Speck, Steven P. DenBaars, Derrick S. Kamber, Troy J. Baker, Yuan Wu, Feng Wu
Publikováno v:
Applied Physics Letters. 94:121906
Coalesced, crack-free (0001) AlN films were grown on stripe patterned sapphire substrates without AlN seed layers using hydride vapor phase epitaxy. Using templates with stripes oriented in the ⟨112¯0⟩sapphire direction, lateral epitaxial overgr