Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Derk Brouns"'
Autor:
Derk Brouns
Publikováno v:
Advanced Optical Technologies. 6
In a lithography process, an image on a mask (reticle) is projected onto a wafer. Continuous decrease in feature sizes also led to a reduction in the wavelength used for exposing. The next step is the move from 193-nm light to extreme ultra-violet (E
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7486b9a9a77e3b22e03d331fef5eb461
Autor:
Andrea Lodovico Mancuso, Hilary Harrold, Ronald Harm Gunther Kramer, Daniel Smith, David Ockwell, Eric Casimiri, Paul Colsters, Piet Hennus, Paul Janssen, James N. Wiley, Dennis De Graaf, Derk Brouns, David van de Weg, Henk Kuntzel, Par Broman, Raymond Wilhelmus Louis Lafarre, Aage Bendiksen, Matthias Kruizinga
Publikováno v:
SPIE Proceedings.
ASML introduced the NXE pellicle concept, a removable pellicle solution that is compatible with current and future patterned mask inspection methods. We will present results of how we have taken the idea from concept to a demonstrated solution enabli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b85ede2a497f8be3353eeca2c1938e4b
https://doi.org/10.1117/12.2239882
https://doi.org/10.1117/12.2239882
Autor:
Beatrijs Louise Marie-Joseph Katrien Verbrugge, Henk Kuntzel, Ronald Harm Gunther Kramer, Pieter Jan van Zwol, Derk Brouns, David Ockwell, Par Broman, Eric Casimiri, Dennis De Graaf, David van de Weg, Carmen Zoldesi, Aage Bendiksen, Paul Janssen, Paul Colsters, Peter A. Delmastro, Daniel Smith, Noelie Wojewoda, Matthias Kruizinga, Mark van de Kerkhof, James N. Wiley, Maria Peter, Frits Van Der Meulen
Publikováno v:
Extreme Ultraviolet (EUV) Lithography VII
Towards the end of 2014, ASML committed to provide a EUV pellicle solution to the industry. Last year, during SPIE Microlithography 2015, we introduced the NXE pellicle concept, a removable pellicle solution that is compatible with current and future
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7ad8815ec58e65e3961469eed4a1f480
Autor:
Luigi Scaccabarozzi, Wim van der Zande, Maurice Bogers, Laurens de Winter, Erik Ruinemans, Rob van Gils, Derk Brouns, Hans Vermeulen, Florian Didier Albin Dhalluin, Daniel Smith, Juan Diego Arias Espinoza, Maria Peter, Sven Lentzen, Jack Van der Sanden
Publikováno v:
Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII.
EUV pellicle membranes are being pursued to protect scanner images from repeating defects caused by reticle fall-on particle defects. Because most materials highly absorb EUV, pellicle membranes must be ultrathin. In an attempt to increase the streng
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::050ffb75c25838090c8bccbe68c00d72
https://doi.org/10.1117/12.2197454
https://doi.org/10.1117/12.2197454
Autor:
Silvester Houweling, John Zimmerman, Laurens de Winters, Brian Blum, Juan Diego Arias Espinoza, Kamali Mohammad Reza, Yang Liu, Hans Meiling, Marco Reijnen, Joost de Hoogh, Nina Vladimirovna Dziomkina, Kursat Bal, Luigi Scaccabarozzi, Ijen van Mil, Carmen Zoldesi, Ronald Frank Kox, Henk Meijer, Beatrijs Louise Marie-Joseph Katrien Verbrugge, Azeredo Lima Jorge Manuel, Derk Brouns, Robert de Kruif, Alain Kempa, Xiong Xugang, Guus Bock, Daniel Smith, Florian Didier Albin Dhalluin, Maarten Mathijs Marinus Jansen
Publikováno v:
Wood, O.R.Panning, E.M., Extreme Ultraviolet (EUV) Lithography V, 90481N-1-90481N-10
As EUV approaches high volume manufacturing, reticle defectivity becomes an even more relevant topic for further investigation. Current baseline strategy for EUV defectivity management is to design, build and maintain a clean system without pellicle.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::834bd6f420e0f7cc25eefca0c14b11bb
http://resolver.tudelft.nl/uuid:dd53d834-e078-4f7b-85cc-1d9ff6193e19
http://resolver.tudelft.nl/uuid:dd53d834-e078-4f7b-85cc-1d9ff6193e19
