Zobrazeno 1 - 10
of 290
pro vyhledávání: '"Deretzis, I."'
Autor:
Schilirò, E., Panasci, S. E., Mio, A. M., Nicotra, G., Agnello, S., Pecz, B., Radnoczi, G. Z., Deretzis, I., La Magna, A., Roccaforte, F., Nigro, R. Lo, Giannazzo, F.
In this paper, the atomic layer deposition (ALD) of ultra-thin films (<4 nm) of $Al_{2}O_{3}$ and $HfO_{2}$ on Au-supported monolayer (1L) $MoS_{2}$ is investigated, providing an insight on the nucleation mechanisms in the early stages of the ALD pro
Externí odkaz:
http://arxiv.org/abs/2305.07933
Autor:
La Magna, A., Alberti, A., Barbagiovanni, E., Bongiorno, C., Cascio, M., Deretzis, I., La Via, F., Smecca, E.
Publikováno v:
Phys. Status Solidi A 2019, 216, 1800597
We present a stochastic simulation method designed to study at an atomic resolution the growth kinetics of compounds characterized by the sp3-type bonding symmetry. Formalization and implementation details are discussed for the particular case of the
Externí odkaz:
http://arxiv.org/abs/2001.07980
Autor:
Giannazzo, F., Greco, G., Di Franco, S., Fiorenza, P., Deretzis, I., La Magna, A., Bongiorno, C., Zimbone, M., La Via, F., Zielinski, M., Roccaforte, F.
Publikováno v:
Adv. Electron. Mater. 2019, 1901171
In spite of its great promises for energy efficient power conversion, the electronic quality of cubic silicon carbide (3C-SiC) on silicon is currently limited by the presence of a variety of extended defects in the heteroepitaxial material. However,
Externí odkaz:
http://arxiv.org/abs/1912.12326
Autor:
Lombardo, S.F., Fisicaro, G., Deretzis, I., La Magna, A. ⁎, Curver, B., Lespinasse, B., Huet, K.
Publikováno v:
In Applied Surface Science 15 February 2019 467-468:666-672
Publikováno v:
Phys. Rev. B 85, 235310 (2012)
We study coherent backscattering phenomena from single and multiple stacking faults (SFs) in 3C- and 4H-SiC within density functional theory quantum transport calculations. We show that SFs give rise to highly dispersive bands within both the valance
Externí odkaz:
http://arxiv.org/abs/1206.6600
Autor:
Deretzis, I., Fiorenza, P., Fazio, T., Schilirò, E., Lo Nigro, R., Greco, G., Fisicaro, G., Roccaforte, F., La Magna, A.
Publikováno v:
Journal of Applied Physics; 10/28/2022, Vol. 132 Issue 16, p1-8, 8p
Autor:
Deretzis, I., La Magna, A.
Publikováno v:
Phys. Rev. B 84, 235426 (2011)
We present an orbital-resolved density functional theory study on the electronic properties of hydrogen and lithium intercalated graphene grown on the Si face of SiC. Starting from the $(6\sqrt3\times6\sqrt3)R30^{\circ}$ surface reconstruction of the
Externí odkaz:
http://arxiv.org/abs/1110.0604
Autor:
Deretzis, I., La Magna, A.
Publikováno v:
Appl. Phys. Lett. 98, 023113 (2011)
We perform density functional theory calculations for the determination of the structural and electronic properties of epitaxial graphene on 4H-SiC(000$\bar{1}$). Using commensurate supercells that minimize non-physical stresses we show that, in cont
Externí odkaz:
http://arxiv.org/abs/1103.0839
Publikováno v:
Phys. Rev. B 82, 161413(R) (2010)
We calculate quantum transport for metal-graphene nanoribbon heterojunctions within the atomistic self-consistent Schr\"odinger/Poisson scheme. Attention is paid on both the chemical aspects of the interface bonding as well the one-dimensional electr
Externí odkaz:
http://arxiv.org/abs/1010.4393
Publikováno v:
Phys. Rev. B 81, 085427 (2010)
We present a systematic study of electron backscattering phenomena during conduction for graphene nanoribbons with single-vacancy scatterers and dimensions within the capabilities of modern lithographic techniques. Our analysis builds upon an \textit
Externí odkaz:
http://arxiv.org/abs/1002.0949