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Akademický článek

Clinically relevant finite element technique based protocol to evaluate growing rods for early onset scoliosis correction

Autor: Niloufar Shekouhi, David Dick, Maxwell William Baechle, Dilpreet Kaur Kaeley, Vijay K. Goel, Hassan Serhan, Jeremy Rawlinson, Derek Shaw

Publikováno v: JOR Spine, Vol 3, Iss 3, Pp n/a-n/a (2020)

Abstract Objective The emergence of distraction‐based growing rods has provided the means to reduce the progression of spinal deformity in early onset scoliosis (EOS). The current protocols for evaluating spinal implants (ie, ASTM‐F1717 and ISO�

Externí odkaz: https://doaj.org/article/d65750294e3a40eeaeaade58cd753d96

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Current benchtop protocols are not appropriate for the evaluation of distraction-based growing rods: a literature review to justify a new protocol and its development

Autor: Niloufar Shekouhi, Amey Kelkar, David Dick, Vijay K. Goel, Derek Shaw

Publikováno v: European Spine Journal. 31:963-979

Although distraction-based growing rods (GR) are the gold standard for the treatment of early onset scoliosis, they suffer from high failure rates. We have (1) performed a literature search to understand the deficiencies of the current protocols, (2)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4bd933ae75410645e6d75aae2711b0bb
https://doi.org/10.1007/s00586-022-07113-1

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P9. A distraction-based bench top protocol for the evaluation of growing rod concepatients

Autor: Jeremy Rawlinson, Vijay K. Goel, Amey Kelkar, Niloufar Shekouhi, Derek Shaw, David Dick

Publikováno v: The Spine Journal. 21:S144-S145

BACKGROUND CONTEXT Early Onset Scoliosis (EOS) is a lateral curvature of the spine observed in children under the age of 10. The emergence of non-fusion surgical techniques, such as traditional growing rods (TGRs), has made it possible to manage the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::005684fe4df350aa4d904585d8361809
https://doi.org/10.1016/j.spinee.2021.05.217

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Security Situational Awareness: A Practical Approach for a Complex Heterogeneous Environment

Autor: Thomas H. Hinke, Derek Shaw

Publikováno v: Encyclopedia of Complexity and Systems Science ISBN: 9783642277375
Encyclopedia of Complexity and Systems Science Series ISBN: 9781071626276

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::15db07d807b58092818eef61848edb97
https://doi.org/10.1007/978-3-642-27737-5_753-1

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Clinically relevant finite element technique based protocol to evaluate growing rods for early onset scoliosis correction

Autor: Jeremy Rawlinson, Maxwell William Baechle, Dilpreet Kaur Kaeley, Vijay K. Goel, Derek Shaw, Niloufar Shekouhi, Hassan Serhan, David Dick

Publikováno v: JOR Spine, Vol 3, Iss 3, Pp n/a-n/a (2020)

Objective The emergence of distraction‐based growing rods has provided the means to reduce the progression of spinal deformity in early onset scoliosis (EOS). The current protocols for evaluating spinal implants (ie, ASTM‐F1717 and ISO‐12189) w

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bac353e1df7816c4a1e4be47968f2279
https://doi.org/10.1002/jsp2.1119

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Electrical properties of In or Ga-saturated CdTe crystals at high-temperature point defect equilibrium

Autor: Roman Grill, Serhiy Solodin, Lilya Diachenko, Yevhen Nykonyuk, O. Panchuk, Derek Shaw, P. M. Fochuk

Publikováno v: Journal of Alloys and Compounds. 664:499-502

High temperature Hall effect measurements between 873 and 1073 K in CdTe single crystals, heavily doped by In or Ga at maximal Cd partial vapor pressure were performed. The free electron density results were compared with respective values, obtained

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::411c6d60459076138d8cc1fb26f8ad15
https://doi.org/10.1016/j.jallcom.2015.12.212

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The kinetics of conductivity type conversion in HgCdTe by ion beam milling

Autor: Peter Capper, Derek Shaw

Publikováno v: Journal of Materials Science: Materials in Electronics. 19:965-972

It is well established that dry etching of HgCdTe by Ar ion-beam milling (IBM) converts vacancy-doped p-type HgCdTe to n-type. Less well established is the understanding of the observed rate of conversion. This paper shows that the observed variation

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4393641c540e4b3b06617c6203fc9353
https://doi.org/10.1007/s10854-007-9428-9

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Activation kinetics of the As acceptor in HgCdTe

Autor: P. Capper, Derek Shaw

Publikováno v: Journal of Materials Science: Materials in Electronics. 19:67-73

The amphoteric model of As in HgCdTe is the basis of an investigation into how the transfer \({\hbox{A}\dot{\hbox{s}}_{\rm Hg} {\rightarrow} \hbox{As}^{\prime}_{\rm Te}}\) is achieved under Hg saturation and so obtain a method for calculating optimum

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f28845a3ceedae73331b77ea49756341
https://doi.org/10.1007/s10854-007-9269-6

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[Untitled]

Autor: P. Capper, Derek Shaw

Publikováno v: Journal of Materials Science: Materials in Electronics. 11:169-177

The Schaake model for the p to n-type conversion in Hg1-xCdxTe caused by annealing in Hg vapor has been extended to obtain an analytic expression for x J 2 /t in terms of basic defect parameters and the background donor concentration (xj is the p-n j

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d61bc07ac25477b344512ec19f7c1739
https://doi.org/10.1023/a:1008989701564

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