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pro vyhledávání: '"Derek Meyer"'
Autor:
Derek Meyer
Publikováno v:
Educational Philosophy and Theory. 55:57-67
Publikováno v:
Journal of Services Marketing. 21:295-303
PurposeThe purpose of this article is to review the emerging literature of services business markets (SBMs) from 1974 to 2007 and analyse main themes that indicate the development of the literature. It also aims to provide an introduction to the spec
Autor:
Derek, Meyer, Benita, Cox
Publikováno v:
Studies in health technology and informatics. 160(Pt 1)
Investment in information systems has traditionally been justified in terms of productivity or value-added gain. From this point of view the slow rate of adoption of IT in the healthcare sector appears paradoxical because the rapid increase in medica
Publikováno v:
Magnetochemistry, Vol 8, Iss 11, p 154 (2022)
We report the dependence of the domain wall depinning field, domain wall velocity, including anisotropy direction, and magnetic properties on the oxidized aluminum thickness of perpendicularly magnetized asymmetric Pt/Co/AlOx trilayers. We also adopt
Externí odkaz:
https://doaj.org/article/8e8ef9830625480c813d18ea44032d0a
Autor:
Junyi Yang, Hidemaro Suwa, Derek Meyers, Han Zhang, Lukas Horak, Zhaosheng Wang, Gilberto Fabbris, Yongseong Choi, Jenia Karapetrova, Jong-Woo Kim, Daniel Haskel, Philip J. Ryan, M. P. M. Dean, Lin Hao, Jian Liu
Publikováno v:
Physical Review X, Vol 12, Iss 3, p 031015 (2022)
We investigate an experimental toy-model system of a pseudospin-half square-lattice Hubbard Hamiltonian in [(SrIrO_{3})_{1}/(CaTiO_{3})_{1}] to include both nontrivial complex hopping and moderate electron correlation. While the former induces electr
Externí odkaz:
https://doaj.org/article/2c36e224ebf045ad8b361163fc221943
Autor:
Aaron J. Austin, Elena Echeverria, Phadindra Wagle, Punya Mainali, Derek Meyers, Ashish Kumar Gupta, Ritesh Sachan, S. Prassana, David N. McIlroy
Publikováno v:
Nanomaterials, Vol 10, Iss 12, p 2434 (2020)
Silica nanosprings (NS) were coated with gallium nitride (GaN) by high-temperature atomic layer deposition. The deposition temperature was 800 °C using trimethylgallium (TMG) as the Ga source and ammonia (NH3) as the reactive nitrogen source. The gr
Externí odkaz:
https://doaj.org/article/88a3efda064642eab3575ee32a9118df