Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Der-ming Kuo"'
Autor:
Der-ming Kuo, 郭德明
95
Recently, the light output power of light-emitting duodes (LEDs) was enhanced due to the rapid development of epitaxy technique. As a result, a high internal quantum efficiency of around 90% has been achieved for AlGaInP LEDs. However, the ab
Recently, the light output power of light-emitting duodes (LEDs) was enhanced due to the rapid development of epitaxy technique. As a result, a high internal quantum efficiency of around 90% has been achieved for AlGaInP LEDs. However, the ab
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/12473965024510143575
Publikováno v:
IET Optoelectronics. 6:303-306
The authors propose a simple direct wet etching method to texture the indium-tin-oxide (ITO) p-contact layer of GaN-based light-emitting diodes (LEDs). It was found that high density ITO nanorods with average diameter of 140 nm and average height of
Autor:
Po-Hong Wang, Tron-Min Chen, Der-Ming Kuo, Shui-Jinn Wang, Wei-Chi Lee, Pei-Ren Wang, Kai-Ming Uang
Publikováno v:
IEEE Photonics Technology Letters. 22:1318-1320
A two-step roughening process that uses a KrF excimer laser and KOH chemical etching for the n-GaN layer surface of vertically structured GaN-based light-emitting diodes (VLEDs) to yield circular protrusions with hexagonal cones atop for light extrac
Publikováno v:
IEEE Photonics Technology Letters. 21:510-512
We propose a simple defect-selective wet etching method to form oblique sidewalls for GaN-based epitaxial layers with phosphoric acid. Using the same defect-selective wet etching, we also prepared GaN-based light-emitting diodes (LEDs) with undercut
Autor:
Pei-Ren Wang, Cheng-Huang Kuo, Der Ming Kuo, Po-Hong Wang, Shui-Jinn Wang, H. R. Kuo, Tseng-Hsing Lin
Publikováno v:
Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials.
Publikováno v:
Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials.
Autor:
Tron-Min Chen, Po-Hong Wang, Shui-Jinn Wang, Der-Ming Kuo, Wei-Chi Lee, Pei-Ren Wang, Kai-Ming Uang
Publikováno v:
SPIE Proceedings.
Use of deep ultraviolet (248 nm) KrF laser irradiation to roughen vertical GaN-based LEDs surface with volcanolike protrusions for light output (Lop) improvement was proposed and demonstrated. After pulse irradiations of KrF laser (750-850 mJ/cm 2 ),
Autor:
Der-Ming Kuo, Kai-Ming Uang, Jui-Chiang Chou, Wei-Chi Lee, Tron-Min Chen, Hon-Yi Kuo, Shui-Jinn Wang
Publikováno v:
2008 Device Research Conference.
A highly reflective ohmic contact and surface roughening by KrF excimer laser technique to improve the optoelectronic properties of high-power vertical metallic-substrate GaN-based light-emitting diodes (VM-LEDs) were proposed and investigated. A met
Autor:
Der-Ming Kuo, Hon-Yi Kuo, Shui-Jinn Wang, Tron-Min Chen, Bor-Wen Liou, Shiue-Lung Chen, Kai-Ming Uang, Su-Hua Yang
Publikováno v:
Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials.
Autor:
Tron-Min Chen, Pei Ren Wang, Shui-Jinn Wang, Wei Chi Lee, Der Ming Kuo, Po Hung Wang, Kai-Ming Uang
Publikováno v:
Applied Physics Express. 4:072104
The performance of vertically structured GaN-based light-emitting diodes (VLEDs) with an efficient surface roughening scheme that uses KrF laser irradiation, chemical wet etching, and an indium–zinc oxide (IZO) transparent conductive layer atop the