Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Der-Sheng Chao"'
Publikováno v:
Nuclear Engineering and Technology, Vol 50, Iss 1, Pp 18-24 (2018)
This study proposes a new method of analyzing the burnup credit in boiling water reactor spent fuel assemblies against various operating parameters. The operating parameters under investigation include fuel temperature, axial burnup profile, axial mo
Externí odkaz:
https://doaj.org/article/77d0595d61b240e4b06e6d7251c3e4f9
Autor:
Der-Sheng Chao, 趙得勝
96
本論文之研究動機為開發一具有高密度與高性能之相變化記憶體。為了評估相變化記憶體元件的操作特性,本研究發展一套功能強大的數值模型用於進行元件的熱電模擬工作,並建立
本論文之研究動機為開發一具有高密度與高性能之相變化記憶體。為了評估相變化記憶體元件的操作特性,本研究發展一套功能強大的數值模型用於進行元件的熱電模擬工作,並建立
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/82743558800407883615
Publikováno v:
Microelectronics Reliability. 142:114927
Publikováno v:
Journal of Electronic Materials. 49:6789-6797
This study examined the effects of three cumulative γ-ray irradiation doses on AlGaN/GaN epilayer material and on high electron mobility transistor (HEMT) devices. After a cumulative γ-ray dose of 16 kGy, the Hall mobility increased from 1800 cm2/V
Publikováno v:
Annals of Nuclear Energy. 132:347-356
This study attempts to investigate the influence due to the use of burnup credit in the criticality safety analysis for pebble-bed reactor (PBR) spent fuel pebbles. Recently, the development of PBR is very quick in China, thus the storage of spent fu
Publikováno v:
Nuclear Engineering and Design. 340:193-200
This study attempted to thoroughly investigate the impact of single and compound effects on burnup credit calculations for PWR spent fuel assemblies originating from various operating parameters. Three operating parameters were considered, including
Publikováno v:
Surface and Coatings Technology. 355:155-161
As compared to the conventional smart-cut technology based on single H ion implantation, sequential implantation of H and He ions has been demonstrated to be effective in reducing the implantation fluence and the thermal budget needed for Si layer sp
Autor:
Chih-Fang Huang, Chien-Chung Hung, Jheng-Yi Jiang, Chwan-Ying Lee, Lurng-Shehng Lee, Der-Sheng Chao, Fu-Jen Hsu, Wen-Bin Yeh, Kuo-Ting Chu
Publikováno v:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Currently, Schottky diode embedded SiC MOSFETs is a popular topic because of its remarkable intrinsic diode behavior and bipolar-degradation-free operation. JMOS is one of them that exhibits much higher chip area efficiency, which means there is neit
Publikováno v:
Nuclear Engineering and Technology, Vol 50, Iss 1, Pp 18-24 (2018)
This study proposes a new method of analyzing the burnup credit in boiling water reactor spent fuel assemblies against various operating parameters. The operating parameters under investigation include fuel temperature, axial burnup profile, axial mo
Publikováno v:
Microelectronics Reliability. 126:114425
In this work, we have demonstrated the wireless power transfer (WPT) system based on the pristine and irradiated E-mode GaN devices. The GaN device has been irradiated up to the 100 kGy dose under the γ-ray irradiation, showing the improved electric