Zobrazeno 1 - 10
of 126
pro vyhledávání: '"Der-Jun Jang"'
Autor:
Zhi-Quan Huang, Wei-Chih Chen, Gennevieve M. Macam, Christian P. Crisostomo, Shin-Ming Huang, Rong-Bin Chen, Marvin A. Albao, Der-Jun Jang, Hsin Lin, Feng-Chuan Chuang
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-8 (2018)
Abstract The abounding possibilities of discovering novel materials has driven enhanced research effort in the field of materials physics. Only recently, the quantum anomalous hall effect (QAHE) was realized in magnetic topological insulators (TIs) a
Externí odkaz:
https://doaj.org/article/982e2355a62641df95ed1164289e76aa
Autor:
Elmer Estacio, John Daniel Vasquez, Der-Jun Jang, Arnel Salvador, Neil Irvin Cabello, Alexander De Los Reyes, Che-Yung Chang, Lorenzo Lopez, Armando Somintac, Hannah Bardolaza
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:6321-6327
Carrier transport in semiconductors with different dimensionalities, i.e., 3D (bulk), 2D (QW), and 0D (QD), were investigated via temperature-dependent terahertz time-domain spectroscopy (THz-TDS). The optical properties and recombination dynamics in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c726cefa9dcee99bff6fe9abcc89a11
https://doi.org/10.1007/s10854-020-03188-y
https://doi.org/10.1007/s10854-020-03188-y
Autor:
Cheng-Chang Yu, Phoebe Nicole G. Perez, Der-Jun Jang, Dah-Chin Ling, Chen-Chi Yang, Cheng-Hung Shih, Emmanuel A. Florido
Publikováno v:
Journal of Luminescence. 213:364-369
The power and temperature dependent photoluminescence (PL) of epitaxially grown In-rich CuInSe2 (CIS) and Cu-rich CIS deposited on N-polar GaN and InN were investigated in this paper. The In-rich CIS/GaN has two PL emissions characterized by a donor-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78cfeaf000975574d786f6afb4e946ad
https://doi.org/10.1016/j.jlumin.2019.05.018
https://doi.org/10.1016/j.jlumin.2019.05.018
Autor:
Mohanta, Antaryami, Shiang-FuWang, Tai-Fa Young, Ping-Hung Yeh, Dah-Chin Ling, Meng-En Lee, Der-Jun Jang
Publikováno v:
Journal of Applied Physics; 2015, Vol. 117 Issue 14, p144503-1-144503-6, 6p, 1 Color Photograph, 4 Graphs
Autor:
Der-Jun Jang, Li-Wei Tu, Ching-Hwa Ho, Phoebe Nicole G. Perez, Meng-En Lee, Emmanuel A. Florido, Wen-Ching Chao
Publikováno v:
Physics and Simulation of Optoelectronic Devices XXVIII.
GaSe1-xSx mixed crystals have recently drawn worldwide attention owing to their wide bandgap, which can be tuned by varying the ratio between Se and S. We have addressed the scarcity of comprehensive studies on its dynamic properties by investigating
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::696587025ac7cae2acff02585a553e7e
https://doi.org/10.1117/12.2550683
https://doi.org/10.1117/12.2550683
Autor:
R.-B. Chen, Der-Jun Jang, F.-C. Chuang, Dah-Chin Ling, Antaryami Mohanta, Shu Kai Lu, J. S. Wang
Publikováno v:
Journal of Luminescence. 195:109-115
Optical properties of multi-layer InAs/GaAs quantum dots (QDs) with different GaAs spacer layer thicknesses (dGaAs) of 20, 15 and 10 nm are investigated by time-integrated and time-resolved photoluminescence (PL) spectroscopy. The energy spacing betw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2cd10023fe2f6ff16115140bb599de6
https://doi.org/10.1016/j.jlumin.2017.11.009
https://doi.org/10.1016/j.jlumin.2017.11.009
Autor:
Feng-Chuan Chuang, Gennevieve Macam, Hsin Lin, Christian P. Crisostomo, Rong-Bin Chen, Zhi-Quan Huang, Wei-Chih Chen, Shin-Ming Huang, Der-Jun Jang, Marvin A. Albao
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-8 (2018)
Nanoscale Research Letters
Nanoscale Research Letters
The abounding possibilities of discovering novel materials has driven enhanced research effort in the field of materials physics. Only recently, the quantum anomalous hall effect (QAHE) was realized in magnetic topological insulators (TIs) albeit exi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::07f242c7e62fb1ac44d730eb672de73f
http://link.springer.com/article/10.1186/s11671-017-2424-y
http://link.springer.com/article/10.1186/s11671-017-2424-y
Time-integrated photoluminescence and pump-probe reflection spectroscopy of Si doped InN thin films.
Publikováno v:
Journal of Applied Physics; 2014, Vol. 115 Issue 4, p1-6, 6p, 1 Chart, 5 Graphs
Publikováno v:
Optics letters. 43(24)
Optical excitations of monolayer bismuthene present the rich and unique absorption spectra. The threshold frequency is not equal to an indirect energy gap, and it becomes zero under the critical electric field. The frequency, number, intensity and fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8d873d40b181c0e579b6b229bd3bdd8a
https://pubmed.ncbi.nlm.nih.gov/30548012
https://pubmed.ncbi.nlm.nih.gov/30548012
Publikováno v:
Journal of Luminescence. 175:16-20
Effect of GaAs spacer layer thickness ( d GaAs ) on multi-stacked InAs/GaAs quantum dots is investigated by photoluminescence (PL) and excitation wavelength ( λ exc ) dependent pump–probe reflection spectroscopy. Dominance of light hole exciton tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c225ab45b8552a05388ccdacfe8c6d28
https://doi.org/10.1016/j.jlumin.2016.01.011
https://doi.org/10.1016/j.jlumin.2016.01.011