Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Der-Chi Shye"'
Autor:
De-Fen Shih, Jyh-Liang Wang, Sou-Chih Chao, Yin-Fa Chen, Kuo-Sheng Liu, Yi-Shan Chiang, Chi Wang, Min-Yu Chang, Shu-Ling Yeh, Pao-Hsien Chu, Chao-Sung Lai, Der-Chi Shye, Lun-Hui Ho, Chia-Ming Yang
Publikováno v:
Sensors, Vol 20, Iss 16, p 4619 (2020)
Pressure injury is the most important issue facing paralysis patients and the elderly, especially in long-term care or nursing. A new interfacial pressure sensing system combined with a flexible textile-based pressure sensor array and a real-time rea
Externí odkaz:
https://doaj.org/article/e7d8a6a7902540db9c26cc9adbd7182c
Autor:
Der-Chi Shye, 史德智
93
The characteristics of (Ba, Sr)TiO3 thin films, prepared by novel techniques of low temperature treatments, were systematically studied in this thesis. Pt/TiN/Ti/Si substrates were applied on each sample to simulate the real capacitor over bi
The characteristics of (Ba, Sr)TiO3 thin films, prepared by novel techniques of low temperature treatments, were systematically studied in this thesis. Pt/TiN/Ti/Si substrates were applied on each sample to simulate the real capacitor over bi
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/85373278879314570415
Autor:
Der-Chi Shye, Chao-Sung Lai, Chia-Ming Yang, Pao-Hsien Chu, K.-L. Liu, Jyh-Liang Wang, Yi-Shan Chiang, Min-Yu Chang, Lun-Hui Ho, De-Fen Shih, Yin-Fa Chen, Chi Wang, Sou-Chih Chao, Shu-Ling Yeh
Publikováno v:
Sensors (Basel, Switzerland)
Sensors
Volume 20
Issue 16
Sensors, Vol 20, Iss 4619, p 4619 (2020)
Sensors
Volume 20
Issue 16
Sensors, Vol 20, Iss 4619, p 4619 (2020)
Pressure injury is the most important issue facing paralysis patients and the elderly, especially in long-term care or nursing. A new interfacial pressure sensing system combined with a flexible textile-based pressure sensor array and a real-time rea
Autor:
Der-Chi Shye, Shu-Chuan Liao, Tsang-Yen Hsieh, Jyh-Liang Wang, Pi-Chun Juan, Cheng-Li Lin, Chia-Ming Yang
Publikováno v:
Microelectronic Engineering. 138:27-30
Display Omitted We report the non-volatile memory using metal-gate MIS compatible structures.Nanocrystals are self-formed for memory application.Memory properties such as program/erase speed, memory window and endurance are measured. TiN/ZrN/high-? (
Publikováno v:
Microelectronic Engineering. 138:86-90
Display Omitted We report the physical analysis of Al/Cr-doped BFO/HfO2/Si MFIS structures.The key process parameters such as postannealing temperature and doping amount are examined.Electrical properties such as memory window and leakage current are
Publikováno v:
Surface and Coatings Technology. 231:423-427
article i nfo Al-doped ZnO (AZO) nanowires (NWs) were synthesized using low-temperature hydrothermal growth to in- vestigate field emission (FE) characteristics. The intensity ratio of NBE peak to DLE peak (R=INBE/IDLE) in- creases and the half-maxim
Publikováno v:
Solid-State Electronics. 77:72-76
High-performance transparent zinc oxide (ZnO) thin-film transistors (TFTs) with location-controlled lateral-grain growth were fabricated by hydrothermal method. The ZnO active channel was laterally grown with aluminum-doped ZnO (AZO) seed layer under
Publikováno v:
Journal of Nanoscience and Nanotechnology. 12:5453-5458
The Al-doped ZnO (AZO) nanostructures field-emission arrays (FEAs) were hydrothermally synthesized on AZO/glass substrate. The samples with Al-dosage of 3 at.% show the morphology as nanowires vertically grown on the substrates and a structure of c-a
Publikováno v:
Microelectronic Engineering. 88:1582-1585
Effects of channel layer thickness on the electrical characteristics of top-gate staggered microcrystalline-Si thin-film transistors (@mC-Si TFTs) have been studied. A thinner channel layer can inherently result in better control over channel region
Publikováno v:
Thin Solid Films. 519:3393-3396
A thin-film transistor (TFT) with polycrystalline SiGe/Si stacked channel layer has been proposed for low-voltage applications. For the stacked poly-SiGe/poly-Si channel layer, the resultant 1-μm TFT device can achieve an on/off current ratio above