Zobrazeno 1 - 10
of 52
pro vyhledávání: '"Der-Chi Shye"'
Autor:
De-Fen Shih, Jyh-Liang Wang, Sou-Chih Chao, Yin-Fa Chen, Kuo-Sheng Liu, Yi-Shan Chiang, Chi Wang, Min-Yu Chang, Shu-Ling Yeh, Pao-Hsien Chu, Chao-Sung Lai, Der-Chi Shye, Lun-Hui Ho, Chia-Ming Yang
Publikováno v:
Sensors, Vol 20, Iss 16, p 4619 (2020)
Pressure injury is the most important issue facing paralysis patients and the elderly, especially in long-term care or nursing. A new interfacial pressure sensing system combined with a flexible textile-based pressure sensor array and a real-time rea
Externí odkaz:
https://doaj.org/article/e7d8a6a7902540db9c26cc9adbd7182c
Autor:
Der-Chi Shye, Chao-Sung Lai, Chia-Ming Yang, Pao-Hsien Chu, K.-L. Liu, Jyh-Liang Wang, Yi-Shan Chiang, Min-Yu Chang, Lun-Hui Ho, De-Fen Shih, Yin-Fa Chen, Chi Wang, Sou-Chih Chao, Shu-Ling Yeh
Publikováno v:
Sensors (Basel, Switzerland)
Sensors
Volume 20
Issue 16
Sensors, Vol 20, Iss 4619, p 4619 (2020)
Sensors
Volume 20
Issue 16
Sensors, Vol 20, Iss 4619, p 4619 (2020)
Pressure injury is the most important issue facing paralysis patients and the elderly, especially in long-term care or nursing. A new interfacial pressure sensing system combined with a flexible textile-based pressure sensor array and a real-time rea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::387a149b35b7e84905caa9d2707c2797
http://europepmc.org/articles/PMC7472060
http://europepmc.org/articles/PMC7472060
Autor:
Der-Chi Shye, Shu-Chuan Liao, Tsang-Yen Hsieh, Jyh-Liang Wang, Pi-Chun Juan, Cheng-Li Lin, Chia-Ming Yang
Publikováno v:
Microelectronic Engineering. 138:27-30
Display Omitted We report the non-volatile memory using metal-gate MIS compatible structures.Nanocrystals are self-formed for memory application.Memory properties such as program/erase speed, memory window and endurance are measured. TiN/ZrN/high-? (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1689d7a22cfaf31313730ba79ce2b2d
https://doi.org/10.1016/j.mee.2015.01.026
https://doi.org/10.1016/j.mee.2015.01.026
Publikováno v:
Microelectronic Engineering. 138:86-90
Display Omitted We report the physical analysis of Al/Cr-doped BFO/HfO2/Si MFIS structures.The key process parameters such as postannealing temperature and doping amount are examined.Electrical properties such as memory window and leakage current are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66ea1b9238746f097c846cc58470c641
https://doi.org/10.1016/j.mee.2015.02.027
https://doi.org/10.1016/j.mee.2015.02.027
Publikováno v:
Surface and Coatings Technology. 231:423-427
article i nfo Al-doped ZnO (AZO) nanowires (NWs) were synthesized using low-temperature hydrothermal growth to in- vestigate field emission (FE) characteristics. The intensity ratio of NBE peak to DLE peak (R=INBE/IDLE) in- creases and the half-maxim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::623ca5752947559692ac0b150d4496a7
https://doi.org/10.1016/j.surfcoat.2012.01.019
https://doi.org/10.1016/j.surfcoat.2012.01.019
Publikováno v:
Solid-State Electronics. 77:72-76
High-performance transparent zinc oxide (ZnO) thin-film transistors (TFTs) with location-controlled lateral-grain growth were fabricated by hydrothermal method. The ZnO active channel was laterally grown with aluminum-doped ZnO (AZO) seed layer under
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::beba30f39d1e2722a7b1a6b5bb7ab63a
https://doi.org/10.1016/j.sse.2012.05.015
https://doi.org/10.1016/j.sse.2012.05.015
Publikováno v:
Journal of Nanoscience and Nanotechnology. 12:5453-5458
The Al-doped ZnO (AZO) nanostructures field-emission arrays (FEAs) were hydrothermally synthesized on AZO/glass substrate. The samples with Al-dosage of 3 at.% show the morphology as nanowires vertically grown on the substrates and a structure of c-a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::041021c3dfa42d515bb0687b1d1d9875
https://doi.org/10.1166/jnn.2012.6239
https://doi.org/10.1166/jnn.2012.6239
Publikováno v:
Microelectronic Engineering. 88:1582-1585
Effects of channel layer thickness on the electrical characteristics of top-gate staggered microcrystalline-Si thin-film transistors (@mC-Si TFTs) have been studied. A thinner channel layer can inherently result in better control over channel region
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d7432533cb7e204844126facc8f41a4
https://doi.org/10.1016/j.mee.2010.11.002
https://doi.org/10.1016/j.mee.2010.11.002
Publikováno v:
Thin Solid Films. 519:3393-3396
A thin-film transistor (TFT) with polycrystalline SiGe/Si stacked channel layer has been proposed for low-voltage applications. For the stacked poly-SiGe/poly-Si channel layer, the resultant 1-μm TFT device can achieve an on/off current ratio above
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40d08bdde4f28ed8757b04f7229d5a23
https://doi.org/10.1016/j.tsf.2011.01.085
https://doi.org/10.1016/j.tsf.2011.01.085
Publikováno v:
Microelectronics Reliability. 51:365-369
A trench MOS barrier Schottky (TMBS) rectifier has been formed by carrying out trench bottom counter-doping implantation for improving the blocking voltage and the device reliability. By additionally implementing a counter-doped region enclosing the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32261f69b0f2d249f4d252d841d82720
https://doi.org/10.1016/j.microrel.2010.08.020
https://doi.org/10.1016/j.microrel.2010.08.020