Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Deok-sin Kil"'
Autor:
Tran Thi Ngoc Van, Donghak Jang, Eunae Jung, Hyunsik Noh, Jiwon Moon, Deok-Sin Kil, Sung-Woong Chung, Bonggeun Shong
Publikováno v:
The Journal of Physical Chemistry C. 126:18090-18099
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e25951b6e1450909f83d3efbb82ca98
https://doi.org/10.1021/acs.jpcc.2c04425
https://doi.org/10.1021/acs.jpcc.2c04425
Autor:
Jin-Seong Park, Hye Mi Kim, Sang-Ho Kim, Geon Ho Baek, Seunghwan Lee, Deok Sin Kil, Ji hoon Baek, Yongjoo Park, Hyung-Soon Park, Yusung Jin
Publikováno v:
Ceramics International. 47:19036-19042
Atomic layer deposition and atomic layer chemical vapor deposition (ALD, ALCVD) of SiO2 films were investigated over a wide range of high temperatures (from 525 °C to 700 °C) using chlorine-free amino silane as the Si precursor and O3 as the oxygen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4175a148f9f308f3bd116440e583741
https://doi.org/10.1016/j.ceramint.2021.03.249
https://doi.org/10.1016/j.ceramint.2021.03.249
Autor:
Kyung Woong Park, Kyung Jin Lee, Jongsun Park, Deok Sin Kil, Byong-Guk Park, Seung-heon Chris Baek, Yunho Jang
Publikováno v:
Nature Electronics. 1:398-403
Spintronic devices offer low power consumption, built-in memory, high scalability and reconfigurability, and could therefore provide an alternative to traditional semiconductor-based electronic devices. However, for spintronic devices to be useful in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d034906d924698e141820c6bd55dceff
https://doi.org/10.1038/s41928-018-0099-8
https://doi.org/10.1038/s41928-018-0099-8
Autor:
Doo Jin Choi, Jun Hyuk Park, Jin Hwan Jeong, Deok Sin Kil, Yeong Min Lee, Uk Hwang, Hyung Keun Kim
Publikováno v:
Materials Science in Semiconductor Processing. 40:50-57
In this study, we investigated a deposition of Ge–Sb–Te (GST) and Ge–Te (GT) phase change films using GST and GT cocktail sources to improve the efficiency of multi-line chemical vapor deposition (CVD). Cocktail sources were compounded with the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6837325097bbd38135aec6b1656d1d69
https://doi.org/10.1016/j.mssp.2015.06.027
https://doi.org/10.1016/j.mssp.2015.06.027
Autor:
Jae-Sung Roh, Ji-Hoon Ahn, Jin-Hyock Kim, Sungki Park, Deok-Sin Kil, Ja-Yong Kim, Se-Hun Kwon
Publikováno v:
Journal of The Electrochemical Society. 159:H560-H564
Ru films were produced by atomic layer deposition (ALD) with an alternating supply of bis(ethylcyclopentadienyl)ruthenium (Ru(EtCp)2) and ozone at deposition temperatures of 225‐275 ◦ C. Ozone acted as an effective reactant for Ru(EtCp)2 .T he Ru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64d4d2f62317eb90a0f11ca1aa9e98e5
https://doi.org/10.1149/2.069206jes
https://doi.org/10.1149/2.069206jes
Autor:
Jong-beom Park, Jae-Sung Roh, Cheong-tae Kim, Jong-woo Yoon, Yong-sik Yu, Jun-sik Lee, Jeong-mo Hwang, Deok-sin Kil
Publikováno v:
Integrated Ferroelectrics. 33:291-301
The effect of annealing conditions for rapid thermal process on the electrical properties of BST thin films was investigated. RTN annealing was very effective for crystallization, however leakage current property was severely degraded due to the loss
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d6c45ea60ca2af2f153945eaf13b45e
https://doi.org/10.1080/10584580108222311
https://doi.org/10.1080/10584580108222311
Publikováno v:
Thin Solid Films. :453-456
Ba 0.5 Sr 0.5 TiO 3 (BST) thin films were prepared on a very thin buffer layer of the same BST by r.f. sputtering. The conditions for the deposition of the buffer layer were changed by varying the deposition temperature, deposition rate and thickness
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be261512680a14f512276e24cc903620
https://doi.org/10.1016/s0040-6090(98)01709-x
https://doi.org/10.1016/s0040-6090(98)01709-x
Publikováno v:
Journal of the Physical Society of Japan. 68:1737-1739
The local order of oxygen atoms around a titanium atom in ( B a , S r ) T i O 3 (BST) thin films fabricated by the single step and the double step processes was studied by the extended X-ray absorption fine structure (EXAFS). This study shows that th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::699490a73cc3be8ed4c80aa532987971
https://doi.org/10.1143/jpsj.68.1737
https://doi.org/10.1143/jpsj.68.1737
Autor:
Sungwook Park, Seung-Jin Yeom, Jinwoong Kim, Ki-Seon Park, Hyun-Chul Sohn, Noh-Jung Kwak, Jae-Sung Roh, Deok-Sin Kil, Kwon Hong, Han-Sang Song, Jin-Hyock Kim, Kee-jeung Lee
Publikováno v:
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..
New ZrO2/Al2O3/ZrO2 (ZAZ) dielectric film was theoretically designed and successfully demonstrated to be applicable to 45nm DRAM devices. ZAZ dielectric film is a combined structure from tetragonal ZrO2 and amorphous Al 2O3. Thus prepared ZAZ TFT cap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17101fc59f133248ba817eb62ffc2c9c
https://doi.org/10.1109/vlsit.2006.1705205
https://doi.org/10.1109/vlsit.2006.1705205
Autor:
Kwon Hong, Deok-Sin Kil, Han-Sang Song, Ki-Seon Park, Noh-Jung Kwak, Sungwook Park, Hyun-Cheol Sohn, Jae-Sung Roh, Seung-Jin Yeom, Jinwoong Kim
Publikováno v:
Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005..
New concept of capacitor dielectric thin film was successfully demonstrated through graded Hf/sub x/Al/sub y/O/sub z/ dielectric thin film accompanied by post ozone annealing for the application to DRAM capacitor. MIM capacitor with graded Hf/sub x/A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe0e61f56dfe3827a4309cd21c679ccc
https://doi.org/10.1109/essder.2005.1546662
https://doi.org/10.1109/essder.2005.1546662